• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.22-29
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• 2006

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as $5{\sim}6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage ($V_T$) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.349-353
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• 2001

Korea has a variety of favorable conditions for utilizing wind as energy. First of all, as a geographical characteristic, it is a peninsular country with its three frontiers surrounded by sea. Such a location makes the country influenced, all the year round, both by sea winds and by seasonal winds, so that it has a good possibility of putting its rich wind resources to use as an energy source. Particularly, in view of the results of observations and analysis of actual data about wind sources, it is quite possible to build wind paver plants in many regions across the country, such as inhabited islands dotted on its southern and western coasts around the Korean peninsular, a number of uninhabited islets attached the main islands, large-scaled reclaimed lands, and major inland areas. In Korea, the attempt to develop the technology of wind paver generation started in the 1970's. It was since 1988, when the Law on the promotion of Alternative Energy Development was enacted, that research and development activities for employing the wind force as a part of energy source have got into full swing. At that moment, however, due to the low level of domestic technological development, such efforts were mainly focused on the attainment of basic technologies with regard to wind power generation. Recently, there have been many noticeable changes in the international as well as domestic environments, such as the conclusion of the International Climate Treaty and the increase in public concerns of natural environment. It is quite possible to predict that the demand for wind paver generation will increase in the near future. Therefore, recognizing that wind, as a clean energy source, can be a promising method for coping with the International Climate Treaty and for replacing the fossil fuel, oil, this essay investigates the development history of wind paver generation systems and the status of technological development in Korea and presents an appropriate model for the development of the paver generation system that can compete with other energy sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.469-473
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• 2017

We investigated the effect of different thin-film thicknesses (25, 30, and 40 nm) on the electrical performance of solution-processed indium-zinc-oxide (IZO) thin-film transistors (TFTs). The structural properties of the IZO thin films were investigated by atomic force microscopy (AFM). AFM images revealed that the IZO thin films with thicknesses of 25 and 40 nm exhibit an uneven distribution of grains, which deforms the thin film and degrades the performance of the IZO TFT. Further, the IZO thin film with a thickness of 30 nm exhibits a homogeneous and smooth surface with a low RMS roughness of 1.88 nm. The IZO TFTs with the 30-nm-thick IZO film exhibit excellent results, with a field-effect mobility of $3.0({\pm}0.2)cm^2/Vs$, high Ion/Ioff ratio of $1.1{\times}10^7$, threshold voltage of $0.4({\pm}0.1)V$, and subthreshold swing of $0.7({\pm}0.01)V/dec$. The optimization of oxide semiconductor thickness through analysis of the surface morphologies can thus contribute to the development of oxide TFT manufacturing technology.

• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Nuclear Engineering and Technology
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• v.54 no.9
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• pp.3516-3525
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• 2022

The high capture cross-section (𝜎_c) of Gadolinium (Gd-155 and Gd-157) causes reactivity penalty and swing at the initial stage of fuel burnup in Pressurized Water Reactor (PWR). The present study is concerned with the feasibility of the combination of mixed burnable poison with both low and high 𝜎_c as an approach to minimize these effects. Two considered reference designs are fuel assemblies with 24 IBA rods of Gd₂O₃ and Er₂O₃ respectively. Models comprise nuclear fuel with a homogeneous mixture of Er₂O₃, AmO₂, SmO₂, and HfO₂ with Gd₂O₃ as well as the coating of PaO₂ and ZrB₂ on the Gd₂O₃ pellet's outer surface. The infinite multiplication factor was determined and reactivity was calculated considering 3% neutron leakage rate. All models except Er₂O₃ and SmO₂ showed expected results namely higher values of these parameters than the reference design of Gd₂O₃ at the early burnup period. The highest value was found for the model of PaO₂ and Gd₂O₃ followed by ZrB₂ and HfO₂. The cycle burnup, discharge burnup, and cycle length for three batch refueling were calculated using Linear Reactivity Model (LRM). The pin power distribution, energy-dependent neutron flux and Fuel Temperature Coefficient (FTC) were also studied. An optimization of model 1 was carried out to investigate effects of different isotopic compositions of Gd₂O₃ and absorber coating thickness.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Journal of Intelligence and Information Systems
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• v.25 no.1
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• pp.63-83
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• 2019

Investors prefer to look for trading points based on the graph shown in the chart rather than complex analysis, such as corporate intrinsic value analysis and technical auxiliary index analysis. However, the pattern analysis technique is difficult and computerized less than the needs of users. In recent years, there have been many cases of studying stock price patterns using various machine learning techniques including neural networks in the field of artificial intelligence(AI). In particular, the development of IT technology has made it easier to analyze a huge number of chart data to find patterns that can predict stock prices. Although short-term forecasting power of prices has increased in terms of performance so far, long-term forecasting power is limited and is used in short-term trading rather than long-term investment. Other studies have focused on mechanically and accurately identifying patterns that were not recognized by past technology, but it can be vulnerable in practical areas because it is a separate matter whether the patterns found are suitable for trading. When they find a meaningful pattern, they find a point that matches the pattern. They then measure their performance after n days, assuming that they have bought at that point in time. Since this approach is to calculate virtual revenues, there can be many disparities with reality. The existing research method tries to find a pattern with stock price prediction power, but this study proposes to define the patterns first and to trade when the pattern with high success probability appears. The M & W wave pattern published by Merrill(1980) is simple because we can distinguish it by five turning points. Despite the report that some patterns have price predictability, there were no performance reports used in the actual market. The simplicity of a pattern consisting of five turning points has the advantage of reducing the cost of increasing pattern recognition accuracy. In this study, 16 patterns of up conversion and 16 patterns of down conversion are reclassified into ten groups so that they can be easily implemented by the system. Only one pattern with high success rate per group is selected for trading. Patterns that had a high probability of success in the past are likely to succeed in the future. So we trade when such a pattern occurs. It is a real situation because it is measured assuming that both the buy and sell have been executed. We tested three ways to calculate the turning point. The first method, the minimum change rate zig-zag method, removes price movements below a certain percentage and calculates the vertex. In the second method, high-low line zig-zag, the high price that meets the n-day high price line is calculated at the peak price, and the low price that meets the n-day low price line is calculated at the valley price. In the third method, the swing wave method, the high price in the center higher than n high prices on the left and right is calculated as the peak price. If the central low price is lower than the n low price on the left and right, it is calculated as valley price. The swing wave method was superior to the other methods in the test results. It is interpreted that the transaction after checking the completion of the pattern is more effective than the transaction in the unfinished state of the pattern. Genetic algorithms(GA) were the most suitable solution, although it was virtually impossible to find patterns with high success rates because the number of cases was too large in this simulation. We also performed the simulation using the Walk-forward Analysis(WFA) method, which tests the test section and the application section separately. So we were able to respond appropriately to market changes. In this study, we optimize the stock portfolio because there is a risk of over-optimized if we implement the variable optimality for each individual stock. Therefore, we selected the number of constituent stocks as 20 to increase the effect of diversified investment while avoiding optimization. We tested the KOSPI market by dividing it into six categories. In the results, the portfolio of small cap stock was the most successful and the high vol stock portfolio was the second best. This shows that patterns need to have some price volatility in order for patterns to be shaped, but volatility is not the best.

• Korean Chemical Engineering Research
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• v.62 no.1
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• pp.36-43
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• 2024

Fishing net waste (FNW) constitutes over half of all marine plastic waste and is a major contributor to the degradation of marine ecosystems. While current treatment options for FNW include incineration, landfilling, and mechanical recycling, these methods often result in low-value products and pollutant emissions. Importantly, FNWs, comprised of plastic polymers, can be converted into valuable resources like syngas and pyrolysis oil through pyrolysis. Thus, this study presents a process for generating high-purity hydrogen (H₂) by catalytically pyrolyzing FNW in a CO₂ environment. The proposed process comprises of three stages: First, the pretreated FNW undergoes Ni/SiO₂ catalytic pyrolysis under CO₂ conditions to produce syngas and pyrolysis oil. Second, the produced pyrolysis oil is incinerated and repurposed as an energy source for the pyrolysis reaction. Lastly, the syngas is transformed into high-purity H₂ via the Water-Gas-Shift (WGS) reaction and Pressure Swing Adsorption (PSA). This study compares the results of the proposed process with those of traditional pyrolysis conducted under N₂ conditions. Simulation results show that pyrolyzing 500 kg/h of FNW produced 2.933 kmol/h of high-purity H₂ under N₂ conditions and 3.605 kmol/h of high-purity H₂ under CO₂ conditions. Furthermore, pyrolysis under CO₂ conditions improved CO production, increasing H₂ output. Additionally, the CO₂ emissions were reduced by 89.8% compared to N₂ conditions due to the capture and utilization of CO₂ released during the process. Therefore, the proposed process under CO₂ conditions can efficiently recycle FNW and generate eco-friendly hydrogen product.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.