• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.32-37
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• 2006

Rare-earth niobates, ag (Ln = Y, La, Gd) are well-known self-activated phosphors due to charge transfer in $NbO^{3-}_4$ showing a broad and strong emission band in the spectral region around 410 nm. In order to find new blue and red phosphors for FED, $LaNbO_4$ : X (X = Bi, Eu) phosphors are prepared through solid-state reactions at high temperature. The optimum reaction condition for these phosphors to give maximum emission intensity is obtained when it is first fired at $1250^{\circ}C$ for 2 h followed by second firing at $1400^{\circ}C$ for 1 h. Under irradiation at 254 nm, $1mol\%\;Bi^{3+}$ doped $LaNbO_4$ phosphor shows strong blue emission band with a range of $420\~450nm$. Also $10mol\%\;Eu^{3+}$ doped $LaNbO_4$ phosphor shows the maximum emission intensity at about 610 nm. Emission peaks at $415\~460nm$, $530\~560nm$and $570\~620nm$are observed in phosphors below $10mol\%\;Eu^{3+}$ doped $LaNbO_4$. Similar results are obtained in cathodoluminescent property of these phosphors.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.67.2-67
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.352.2-352.2
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• 2016

In recent times, much effort has been concentrated on trivalent rare-earth ions activated ceramics or oxide phosphors to develop display industries due to their promising applications in optoelectronic devices and field-emission displays. To prepare efficient phosphors, citrate sol-gel method is one of the best synthetic methods. Green and blue emissive CaLa2ZnO5:RE3+ nanocrystalline materials are synthesized by a citrate sol-gel method. After the samples annealing at $1100^{\circ}C$, morphological and structural properties are investigated by scanning electron microscope images and X-ray diffraction patterns, respectively. At low electron beam voltage of <5 kV, the visible photoluminescence properties are obtained. Various concentrations of the RE3+ ions exhibited their characteristic emission peaks at different excitation wavelengths, respectively. Similarly, at high electron beam anodic voltage, the cathodoluminescence properties are studied as a function of acceleration voltage and filament current. The chromaticity coordinates are calculated for the optimized CaLa2ZnO5 nanocrystalline luminescent materials.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.240-244
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• 2002

The GdOBr:Ce phosphor were prepared by solid state reaction using starting chemicals of $Gd_2O_3,\;CeO_2\;and\;NH_4Br$. Under 370nm UV excitation, GdOBr:Ce phosphors showed blue emission band with a spectral range of 410∼430nm. The maximum photoluminescence(PL) emission intensity was observed at 2mol% Ce content. In order to look for feasibility of application for low voltage filed emission display, cathodoluminescence(CL) of GdOBr:Ce phosphors were measured. CL emission spectra was found to be in the range of 410∼430nm, which is the same as PL spectra. The phosphors with 1mol% Ce concentration showed the maximum CL emission intensity. For the comparison of degradation property of the prepared phosphors with commercial ones, the electron beam was applied for 10min. From the result, GdOBr:Ce could be used as a blue phosphor for FED.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.211-211
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• 2000

Carbon nanotubes (CNTs) have been spotlighted as one of promising field emission displays(FEDs). For the first time, to authors knowledge, we have developed the 9" color CNT-FEDs with the resolution of 240x576 lines. The 9" CNT-FEDs with diode-type and triode-type structures are presented. The well-dispersed CNT paste was squeezed onto the metal-patterned cathode glass. For the anode plate, the Y2O2S:Eu, ZnS:Ag,Cl low-voltage phosphors were printed for red, green, and blue colors, respectively. The vacuum-packaged panel maintained the vacuum level of 1x10-7 Torr. The uniform moving images vacuum-packaged panel maintained the vacuum level of 1x10-7 Torr. The uniform moving images were demonstrated at 2 V/um. High brightness of 800, 200, and 150cd/m2 was observed on the green, red, and blue phosphors at V/um, respectively. Field emission characteristics of a triode-type CNT-FED were simulated using a finite element method. the resultant field strength on the cathode was modulated by gate bias and emitted electrons were focused on the anode. A relatively uniform emission image was experimentally achieved at the 800V anode. A relatively uniform emission image was experimentally achieved at the 800V anode and the 50-180 V gate biases. Energy distribution of electrons emitted from CNTs was measured using an energy analyzer. The maximum peak of energy curve corresponded to the Fermi energy level of CNTs. The whole fabrication processed of CNT-FEDs were fully scalable and reproducible. Our CNT-FEDs has demonstrated the high potential of large-area and full-color applications with very low cost fabrication and low power consumption.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.165-172
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• 1997

CRT용 고전압 형광체인 ZnS를 저전압용에 적용하기 위해 ZnS 분말표면에 졸-겔법으로 SnO$_2$코팅조건을 연구하였다. Sn의 코팅량은 Sn/ZnS=0.02~0.07 범위에서 변화시켰으며, 코팅된 ZnS분말의 열처리는 450~90$0^{\circ}C$/2hr 범위에서 수행하였다. Sn/ZnS=0.035일 때 최적의 코팅이 이루어졌으며, 과도한 열처리는 ZnS에서 ZnO로 상전이가 발생하므로 500~$600^{\circ}C$ 정도가 안전한 조건임이 규명되었다. Sn량이 증가할수록 코팅된 ZnS의 형광강도는 감소하였으나 저전압 형광특성은 향상될 수 있는 가능성을 보여주었다.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1040-1046
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• 1996

Low voltage phosphor, ZnGa$_{2}$O$_{4}$:Mn, was synthesized and sintered at the high temperature in Ar or vacuum. By XRD analysis, it is confirmed that poly crystalline ZnGa$_{2}$O$_{4}$:Mn solid solution was formed. From EPMA analysis of the samples prepared in Ar and vacuum, the change of oxygen content was investigated and as a result, it was observed that the oxygen amounts were reduced in ZnGa$_{2}$O$_{4}$:Mn prepared in vacuum. It caused the deficiency in oxygen amounts in the phosphor and then consequently, it results in the formation of the energy level near 513 nm. It contributes to the improvement of the brightness of ZnGa$_{2}$O$_{4}$:Mn.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.566-568
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• 2003

The phosphor $CaTiO_3:Pr^{3+}$ attracts much attention as a low-voltage red phosphor because of its good chromaticity and intrinsic conductivity. The addition of Ga into this CaTiO₃:Pr led the luminance intensity to greatly enhance without the change of the wavelength for the electronic transition and the peak shape of it. The increase of the recombination rate of electron-hole pairs through the Ga ion doping, which was expected to play a role of a hole-trap center, is proposed to be one of the reasons for the enhancement of the cathodoluminescence intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.653-656
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• 2014

$Cs_3Sb$ photocathode was formed by newly developed process and successive in-situ lighting devices were fabricated in a process chamber. R, G, and B phosphors were applied on the anode plate, respectively. Major parameters such as brightness, power consumption, and efficacy were measured. The wavelength of LED excitation source was 450 nm. Both high power and low power modes were applied in the measurement. Measurement values were clearly differentiated by the voltage application modes. The measured values of each parameter was good enough to be applied for general lighting source. The results showed that $Cs_3Sb$ photocathode formed in atmospheric conditions was functioning as good as the photocathode formed in UHV conditions, and thus it could be applied to advanced lighting devices.