• 열처리공학회지
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• 제10권4호
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• pp.266-277
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• 1997

Near-threshold fatigue crack growth characteristics was investigated on the Ni-Cr-Mo-V low alloy steel, which has the different microstructure obtained by tempering at various temperature. The specimens were austenized at $950^{\circ}C$ and then followed by tempering at $200^{\circ}C$, $530^{\circ}C$ and $600^{\circ}C$. Strain rate was obtained from strain gauge attached on the crack tip and crack opening point was observed through load-strain curve. Threshold stress intensity range(${\Delta}K_{th}$) was increased with increasing tempering tempuerature, but the effective threshold stress intensity rage (${\Delta}K_{eff,\;th}$) was not affected with the increasing temperature. Grain size increased with increasing tempering temperature.

• 전기의세계
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• 제23권6호
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• pp.49-55
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• 1974

Amorphous semiconductor from As 30 Te 48 Ge 10 Si 12 was prepared, and studied electron microscopy, X-ray analysis and resistivity measurement. It's resistivity is 1.56*10$^{6}$ .ohm.-cm when small ampule is used for preparing sample it is found that no phase separation has occurced by electron microscopy, and that phase transition temperature is 232.deg. C by differential Thermal Analysis. The specimen showed threshold switching that the low resistance state occur at critical electric field and the resistance recover at low applied field. Critical electric field of the switching is 10$^{5}$ V/cm at room temperature. Threshold voltage secreace exponentially with increasing ambient temperature and at that each voltage resistance of the switching device increase exponentially. According to the series resistance and applied vottage current slope on the V-I curve is varied. When applied voltage is decreased after switching, the resistance of the switching device is increased. By this result the origin of the switching is the Joule's heating.

• 한국해양공학회지
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• 제16권5호
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• pp.80-87
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• 2002

In this study, CT specimens were prepared from spring steel(SUP9) which was used in suspension of automobile for room temperature and low temperature service. We got the following characteristics from fatigue crack growth test carried out in the environment of room temperature and low temperature at $25^{\circ}C$, ­3$0^{\circ}C$, ­5$0^{\circ}C$, ­7$0^{\circ}C$ and ­10$0^{\circ}C$ in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I) and stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to descend temperature. It is assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• 동력기계공학회지
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• 제4권1호
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• pp.81-87
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• 2000

In this study, CT specimens were prepared from ASTM SA516 Gr. 70 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C,\;-60^{\circ}C,\;-80^{\circ}C\;and\;-100^{\circ}C$ and in the range of stress ratio of 0.05 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ${\Delta}K_{th}$ in the early stage of fatigue crack growth (Region I) and stress intensity factor range ${\Delta}K$ in the stable of fatigue crack growth (Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm $d{\alpha}/dN\;-{\Delta}K$ in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate $d{\alpha}/dN$ is rapid in proportion to descend temperature in Region II and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2001년도 춘계학술발표대회 개요집
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• pp.224-227
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• 2001

In this study, CT specimens were prepared hem ASTM SA516 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -l$0^{\circ}C$ and -l2$0^{\circ}C$ and in the range of stress ratio of 0.1, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range $\Delta K_{th}$ in the early stage of fatigue crack growth ( Region I ) and stress intensity factor range $\Delta$K in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN - $\Delta$K in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region H and the cryogenic-brittleness greatly affect a material with decreasing temperature.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• 전기전자학회논문지
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• 제15권2호
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• 한국지역지리학회지
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• 제22권1호
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• pp.195-210
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• 2016

본 연구는 고온에 취약한 그룹의 특성에 대한 이해를 증진하고 고온으로 인한 사망자를 줄이는데 기여하기 위하여 사회 경제적 요인과 사망자 임계기온의 관계를 연구하였다. 연구 지역은 서울이며 연구 기간은 2000~2010년으로 선정하였다. 연구 결과, 고령 인구 비율이 높은 지역과 낮은 지역에서 사망자 임계기온은 각각 $27.6^{\circ}C$와 $27.9^{\circ}C$이었다. 고학력자 비율이 높은 지역과 낮은 지역에서 사망자 임계 기온은 각각 $27.7^{\circ}C$와 $27.4^{\circ}C$이었다. 기초생활수급자 비율에 따른 지역 구분에서는 임계기온의 차이가 나타나지 않았다. 하지만 고령 인구 비율이 높고 기초생활수급자 비율이 높은 지역에서 사망자 임계기온은 다른 지역에 비해 $0.7^{\circ}C$ 낮았다. 고령 인구 비율이 높고 고학력자 비율이 낮은 지역에서 사망자 임계기온도 상대적으로 $0.7^{\circ}C$ 낮았다. 이는 서울에서 저소득 고령층이 고온에 취약하다는 것을 보여준다. 따라서 본 연구의 결과는 고온으로 인한 사망자를 줄이기 위하여 저소득 고령 인구에 대한 정책을 우선 수립할 필요성이 있음을 시사한다.

• 한국자동차공학회논문집
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• 제12권1호
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• pp.83-90
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• 2004

In this study, CT specimens were prepared from spring steel(SUP9) processed shot peening which was room temperature and low temperature experiment. And we got the following characteristics from fatigue crack growth test carried out in the environment of room temperature and low temperature at $25^{\circ}C$, $-30^{\circ}C$, $-50^{\circ}C$, $-70^{\circ}C$,$-100^{\circ}C$, and $-150^{\circ}C$, in the range of stress ratio of 0.05 by means of opening mode displacement. The threshold stress intensity factor range ΔKth in the early stage of fatigue crack growth (Region I)was increased but stress intensity factor range ΔK in the stable of fatigue crack growth (Region II) was decreased in proportion to decrease temperature. It is assumed that the fatigue resistance characteristics and fracture strength at low temperature and high temperature is considerably higher than that of room temperature in the early stage and stable of fatigue crack growth region.

• 전자공학회논문지A
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• 제32A권6호
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• pp.75-81
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• 1995

InGaAsP/InP uncooled LDs emitting at 1.3$\mu$m wavelength are of interest for several application of fiber-to-the-home, optical interconnection, long-haul high-bit-rate optical transmission systems, etc. The strain compensated PBH-MQW-LD employing 1.4% compressive strained well (${\lambda}=1.3{\mu}m$) and 0.7% tensile strained barrier (${\lambda}=1.12{\mu}m$) layers grown by low pressure metallicorganic vapor phase epitaxy was found to be low threshold current and stable temperature characteristics. The average threshold current of 5.6mA and average slope efficiency of 0.27mW/mA at room temperature were obtained for uncoated uncooled-LD.