• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.5
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• pp.949-954
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• 2007

In this work, temperature stable frequency-to-voltage converter is proposed. In FVC circuit input frequency is converted into output voltage signal. A FLL is similar to PLL in the way that it generates an output signal which tracks an input reference signal. A PLL is built on a phase detector, a charge pump, and a low pass filter. However, FLL does not require the use of the phase detector, the charge pump and low pass filter. The FVC is designed by using $0.25{\mu}m$ CMOS process technology. From simulation results, the variation of output voltage is less than ${\pm}2%$ in the temperature range $0^{\circ}C\;to\;75^{\circ}C$ when the input frequency is from 70MHz to 140MHz.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1746-1750
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• 2004

The objective of this study is to investigate the effect of supercooling repression on the clathrate compound by adding additives. For this purpose, phase change temperature and supercooling were measured when additives added to TMA30wt% clathrate for heat source temperature of $-6^{\circ}C$. The experimental results show that the phase change temperature with the chloroform of 0.1wt% is higher by $0.3^{\circ}C$ than TMA30wt% and the supercooling with the surfactant 0.1wt% is reduced by $9.2^{\circ}C$.

• Progress in Superconductivity
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• v.5 no.1
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• pp.84-87
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• 2003

$YBa_2$$Cu_3$$O_{7-x}$ (YBCO) thin films were fabricated by MOD-TFA process via dip-coating method on LaAlO$_3$, (LAO) single crystalline substrates. In this study, we investigated effect of annealing temperature and solvent on the microstructure and texture of YBCO thin films. The precursor films were annealed at various temperature to improve surface morphologies and phase purities. It was shown that the films annealed at relatively lower and higher temperature exhibit low phase purity and crystallinity. The effect of various solvents on surface morphologies and second phase has been investigated.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1561-1569
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• 1994

Effect of calcining temperature on the sintering behaviors and microwave dielectric properties of BMT[Ba(Mg1/3Ta2/3)O3] ceramics was studied. The calcining temperatures were varied from 80$0^{\circ}C$ to 130$0^{\circ}C$, respectively. It was found that, as calcining temperature lowered below 125$0^{\circ}C$, second phase such as Ba5Ta4O15 phases started to appear in calcined powder with unreacted powders. After sintering, exaggerately grown Ba5TaO3 phase could be found amang the uniform BMT grains in sintered body. Basis on the infiltration experiment, Ba0.05TaO3 phase should be formed by reaction of BMT grain and BaO-MgO eutectic liquid. But increase of calcining temperature above 125$0^{\circ}C$, there was not any second phase or unreated component in calcined powder and sintered body. As result, low calcining temperature led to precipitation of second phase in specimen and resulted decrease of Q value of BMT ceramics.

• Journal of the Korean Ceramic Society
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• v.36 no.7
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• pp.698-704
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• 1999

Li rich Li1+xMn2-xO4(x=0.07) spinel powders were prepared by an oxalate precipitation of wet chemical methods at temperature lower than $600^{\circ}C$. The FTIR results showed that the powders prepared at $600^{\circ}C$ had high degree of crystal quality comparing with the spinel powders prepared by solid state reaction at 75$0^{\circ}C$ which was the lowest synthesis temperature of the solid state reaction method. The particle size of powders prepared by the oxalate precipitation at $600^{\circ}C$ was smaller than 0.2${\mu}{\textrm}{m}$ and the specific surface area was 11.01 m2/g A heat treatment over 90$0^{\circ}C$ formed second phase in the precipitates. It was shown that there were phase transitions at temperatures. T1,T2 and T2. The transitions involved weight loss and gain during heating and cooling. The low temperature synthesis below $600^{\circ}C$ avoided the second phase formation and the prepared powders showed improved compositional and physical properties for secondary lithium battery applications.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 전기의세계
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• v.30 no.7
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• pp.441-447
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• 1981

As a preceeding work for the study on dielectric characterstics of a kind of low density polyethylene introduced morphological change by mechanical method, glass transition temperature which is regarded as a macroscopic aspect for relaxation of molecular chain segments has been observed by means of temperature dependent dilatometric measurement. The origina specimen clearly shows two knees which correspond to two peaks (.gamma. and .betha. peak) in the intenal friction measurement, suggesting the existence of separated glass transition temperatures at 150.deg.k and 260.deg.k respectively. On the specimen irradiated to 100 Mrad both glass transition temperatures tend to shift towards high temperature sides because of crosslinking by irradiation. furthemore an evidence can be seen that radiation effect, even in amorphous phase, is also slelctive depending on slight morphological differences. The specimen extended to four times in length shows a peculiar nature such as negative linear thermal expansion coefficient increasing with temperature between 220.deg.k and ambient temperature and that this fact is interpreted by considering that c axis of the lattice aligns along the extended direction by drawing, further c axis inherently possesses the characteristics of negative linear thermal expansion coefficient. For the observations that the relatively small positive linear expansion on the specimen extended to ca. two times as well as the part below 220.deg.k of the specimen extended to four times, it is considered for the reason of the facts that the incompletely oriented region indicated as the middle part of Peterlin's model tends to restore partially to orginal arrangement-a kind of phase transition-as increasing with temperature.

• Journal of the Korean Society of Clothing and Textiles
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• v.25 no.2
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• pp.339-349
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• 2001

This study was investigated the effects of ambient temperatures and menstrual cycle on Resting Metabolic Rate(RMR), Rectal Temperature(Tre), Skin(forehead, chest, abdomen, forearm, hand, thigh, leg, foot) Temperatures, and subjective thermal sensations in 8 young Korean females(ages 22-25, voluntarily). The Tre and the Skin Temperatures were measured in once every five minute for one hour. RMR was measured three times at 30 minutes intervals by indirect calorimetry. All measurements were gathered during Luteal Phase(LP), Menstruation(M), and Follicular Phase(FP) at two levels of ambient temperatures; low(17~21$^{\circ}C$) and middle(21.1~$25^{\circ}C$). LP were the highest values during FP and M in RMR, Tre, forehead temperature, chest temperature and abdomen temperature, while the leg(leg and foot) and arm(forearm and hand) temperatures were higher during FP rather than during LP at each ambient temperature. The downward curve of Tre in the experiment was larger during FP than LP. The values in subjective thermal sensations were most comfortable during LP than M and FP at each ambient temperature. The LP-FP differences in core and mean skin temperatures, and resting metabolic rate, were more significant at middle ambient temperatures than at low ambient temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.168.2-168.2
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• 2015

We observed the temperature-dependent evolution and behavior of P3HT type-II phase during a real time annealing process from a cryo-cooled low temperature in the absence and presence of an Al electrode. A poly (3-hexylthiophene) (P3HT) Type-II phase in the P3HT:PCBM films started to form near at $-10^{\circ}C$, regardless of Al layer presence. In the absence of an Al layer, type-II phase was extinct at $30^{\circ}C$. However, the extinction temperature was extended to $50^{\circ}C$ in the presence of the Al layer. Simultaneously, combined with the type-II phase, a 1:3 ordered P3HT type-II (1/3,0,0) super-lattice peak evolved. These type-II domains tended to be formed near the Al electrode layer with higher aligned status than host P3HT crystals.

• Korean Journal of Metals and Materials
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• v.47 no.10
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• pp.629-634
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• 2009

The effects of processing parameters on the surface properties of the hardened layers processed by the low temperature plasma nitrocarburizing and the low temperature two-step plama treatment (carburizing+nitriding) were investigated. The nitrogen-enriched expanded austenite structure (${\gamma}_N$) or S phase was formed on all of the treated surface. The surface hardness reached up to 1200 $HV_{0.025}$, which is about 5 times higher than that of untreated sample (250 $HV_{0.1}$). The thickness of hardened layer of the low temperature plasma nitrocarburized layer treated at $400^{\circ}C$ for 40 hour was only $15{\mu}m$, while the layer thicknesss in the two-step plama treatment for the 30 hour treatment increased up to about $30{\mu}m$. The surface thickness and hardness increased with increasing treatment temperature and time. In addition, the corrosion resistance was enhanced than untreated samples due to a high concentration of N on the surface. However, higher treatment temperature and longer treatment time resulted in the formation of $Cr_2N$ precipitates, which causes the degradation of corrosion resistance.