• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.6-12
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• 2013

Aerosol deposition(AD) coating that enable fabricate films at low temperature have begun to be widely researched for the integration of ceramics as well to realize high-speed deposition rates. For application of ceramic thick film by AD to display and electronic ceramic industry, fabrication of dense structure with a no cracking is required. In this study, to fabricate dense ceramic thick film, the effect of crystal phase of starting powder was investigated. For this study, amorphous and crystalline $SiO_2$ powders were used as starting powders. Two types of $SiO_2$ powders were deposited on glass substrate by AD. In the case of amorphous $SiO_2$ powder, the deposited films had extremely incompact and opaque layer, irrespective of particle size. In contrast to amorphous powder, in the case of crystalline powder, porous structure layer and dense microstructure with no cracking layer were fabricated depending on the particle size. The optimized starting powder size for dense coating layer was $1{\sim}2{\mu}m$. The transmittance of film reached a maximum of 76% at 800 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.67-70
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.241-246
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• 2007

The present paper dealt with an experimental study of boiling heat transfer characteristics of $CO_2$. Heat transfer coefficients of the refrigerant flow inside horizontal smooth microchannel were obtained with inner tube diameter of 0.3mm and length of 300mm. The direct electric heating method was applied for supplying the heat uniformly to the refrigerant. The experiments were conducted with $CO_2$ purity of 99.99%, at saturation temperature of $10^{\circ}C$, mass flux ranges of $300{\sim}900\;kg/m^2s$, and heat flux ranges of $15{\sim}45\;kW/m^2$. While heat transfer coefficient increased with the increase of heat flux in the low quality region, the heat transfer coefficient decreased with the increase of quality in the high quality region. The heat transfer coefficients were compared with seven existing correlations with the Gungor-Winterton's(1986) correlation gave the best prediction. A new corelation to predict the two-phase flow heat transfer coefficient was developed based on the Chen(1966) correlation. The new correlation predicted the experimental data well with a mean deviation of 9.69% and average deviation of -3.03%.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.325-329
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• 1996

We report on p-type arsenic doping of metalorganic vapor phase epitaxially (MOVPE) grown HgCdTe on (100) GaAs. HgCdTe was grown at $370^{\circ}C$ in a horizontal reactor with using dimethy-cadmium, diisoprophyltelluride, and elemental Hg. We used tris-dimethylaminoarsenic (DMAAs) as the metalorganic for p-doping. 4micron thick CdTe and subsequently 10micron thick HgCdTe were grown on (100) GaAs substrate. Interdiffused multilayer process in which thin CdTe and HgTe layers are grown alternately and interdiffused to obtain homogeneous HgCdTe alloys was used. Arsenic was doped during CdTe growth cycle. After growth HgCdTe was annealed at $415^{\circ}C$ for 15 min and then annealed again at $220^{\circ}C$ for 3 hr, both with Hg-saturate condition. We could obtain p-doping from 2.5$\times$$10^{16}$ to 6.6$\times$$10^{17}$$cm^{-3}$, depending on the DMAAs partial pressure. With the dual Hg-annealing, activation of arsenic was aboutt 90%, which was confirmed by SIMS measurement. With only low temperature annealing at $220^{\circ}C$ for 3hr, activation efficiency was about 50%.

• 한국연소학회:학술대회논문집
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• 2013.06a
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• pp.109-110
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• 2013

This paper describes gas turbine combustion characteristics of synthetic natural gas which contains a small amount hydrogen content. By conducting ambient pressure high temperature combustion test at gas turbine relevant combustor geometry, the combustion characteristics such as combustion instability, NOx and CO emission, temperatures at turbine inlet, nozzle and dump plane, and flame structure from high speed OH chemiluminescence images were investigated when changing hydrogen content from zero to 5%. From the results, qualitative and quantitative relationships are derived between key aspects of combustion performance, notably NOx/CO emission and combustion instability. Natural gas containing hydrogen up to 5% does not show significant difference in view of all combustion characteristics except combustion instability. Only up to 1% hydrogen addition could not change the pressure fluctuation and phase gas between fluctuations of pressure and heat release. From the results, it can be concluded that synthetic national gas which contains 1% of hydrogen can be guaranteed for the stable and reliable operation of natural gas firing gas turbine.

• Journal of Electrical Engineering and Technology
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• v.2 no.2
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• pp.257-262
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• 2007

In this paper the experiments of breakdown characteristics by temperature change of $SF_6$ gas($GSF_6$), and $SF_6$ liquid ($LSF_6$) in model GIS (Gas Insulated Switchgear) are described. From the experiment's results, the breakdown characteristics classify the vapor stage of $SF_6$ according to Paschen's law, in which the gas & liquid coexisted stage of voltage value increases, resulting in much deviation and the breakdown of voltage ($V_B$) low stage as the interior of the chamber gets filled with a mixture of $SF_6$ that is not liquefacted and remaining air that cannot be ventilated. The ability of $LSF_6$ insulation is higher than the high-pressurized $SF_6$ gas. The breakdown characteristics of $LSF_6$ were produced by bubble formed evaporation of $LSF_6$ and bubbles caused by high electric emission. It is considered in this paper that the results are fundamental data for electric insulation design of superconductor and cryogenic equipments machinery that will be studied and developed in the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.775-778
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• 2011

TBP (tertiarybutylphosphine), a relatively new material for phosphorus, has been studied with EDMIn (ethyldimethylindium) as an indium source for the growth of InP by MOVPE (metalorganic vapor phase epitaxy). Mirror smooth and good crystalline InP layers were obtained at $500-600^{\circ}C$ with the TBP/EDMIn molar ratio as low as 21. The deposited InP layers are all n-type with the electron concentration in the range of (5-10)${\times}10^{16}\;cm^{-3}$, which is a lot higher than those from $PH_3$. This high concentration is due presumably to the high concentration of donor impurities in TBP. And it has been found that the formation of adduct occurs between EDMIn and TBP at room temperature when the partial pressure of EDMIn in the reactant mixture is above $1{\times}10^{-2}$ Torr. The high concentration of impurities in TBP and the adduct formation between EDMIn and TBP are major obstacles in replacing $PH_3$ and TMIn for the growth of device quality InP layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.319.1-319.1
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• 2013

Solid oxide fuel cells (SOFCs) have been recognized as one of emerging renewable energy sources, due to minimized pollutant production and high efficiency in operation. The performance of SOFCs is largely dependent on the electrode polarization which involves the oxidation/reduction in cathodes and anodes along with the charge transport of ions and electronic carriers. Atomic layer deposition is based on the alternate chemical surface reaction occurring at low temperatures with high uniformity and superior step coverage. Such features can be extended into the coating of metal oxide and/or metal layer onto the porous materials. In particular, the atomic layer deposition is can manipulated in controlling the charge transport in terms of triple phase boundaries, in order to control artificially the electrochemical polarization in electrodes of SOFC. The current work applied atomic layer deposition of metal oxides intro the electrodes of SOFCs. The corresponding effect was monitored in terms of the electrochemical characterization. The roles of atomic layer deposition in solid oxide fuel cells are discussed towards optimized towards long-term durability at intermediate temperature.

• Journal of Welding and Joining
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• v.16 no.3
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• pp.157-166
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• 1998

Recently as environmental pollution caused by Pb has posed a serious threat to the global environment, the trend to regulate the usage of Pb in electronic industry is one the rise. Currently, the solder alloy with high Pb content, Sn-37%Pb, is utilized in the electronic assembly therefore, the objective of this study is to develop an alternative solder alloy for the existing Sn-37%Pb solder alloy. First thing, this work choosed Sn-5%Pb-1.5%Ag, Sn-5%Pb-1.5%Ag-x%Bi(x=1~5%) for candidate solder alloys, and examined their properties such as melting range, wettability, microhardness, tensile property, oxidation behavior and microstructure. Wettability was on the same level of Sn-37%Pb. Dissolution of Pb ion in Sn-5%Pb solder was 0.46ppm. This solder alloy revealed cellular dendrite microstructure $\beta$-Sn matrix, Pb-rich phase, Ag/Sn, and Cu/Sn Intermetallic compounds. The range of solidification temperature was within 3$0^{\circ}C$. Also these alloy displayed higher tensile strength and lower elongation than Sn-37%Pb. The resistance of oxidation in Sn-5%Pb-1.5%Ag solder alloy was superior to that of Sn-37%Pb solder alloy. But that of Sn-5%Pb-1.5%Ag-5%Bi solder alloy was equal to that of Sn-37%Pb solder alloy.

• Korean Journal of Microbiology
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• v.22 no.2
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• pp.77-84
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• 1984

This examined some conditions for the induction of ${\beta}$-D-galactosidase synthesis in Candida kefyr CBS 834. The optimal pH, temperature, and inoculum size either for growth or${\beta}$-D-galactosidase synthesis were 5.5, $30^{\circ}C$ and above 0.2 at A610nm, respectively. Enzyme activity began to increase at 2h after the addition of inducer, and continued to increase linearly up to $2{\sim}3h$ before reaching stationary phase, and thereafter its activity was decreased. ${\beta}$-D-galactosidase was induced either by lactose or galactose but not either by glucose or ethanol. The greater activity of ${\beta}$-D-galactosidase on galactose than on lactose indicated that the former might be natural inducer for ${\beta}$-D-galactosidase synthesis. The rate of its induction as a function of lactose concentration showed that enzyme activity increased linearly above 4mM, while it was very low below that. Glucose represed the induction of ${\beta}$-D-galactosidase, and the period of adaptation to inducer from other carbon sources was relatively short.