• 한국세라믹학회지
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• 제52권6호
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• pp.462-466
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• 2015

This paper reports the microstructure of hot-pressed $ZrB_2$-SiC ceramics with added $B_4C$ as characterized by transmission electron microscopy. $ZrB_2$ has a melting point of $3245^{\circ}C$, a relatively low density of $6.1g/cm^3$, and specific mechanical properties at an elevated temperature, making it a candidate for application to environments with ultra-high temperatures which exceed $2000^{\circ}C$. Due to the non-sinterability of $ZrB_2$-based ceramics, research on sintering aids such as $B_4C$ or $MoSi_2$ has become prominent recently. From TEM investigations, an amorphous layer with contaminant oxide is observed in the vicinity of $B_4C$ grains remaining in hot-pressed $ZrB_2$-SiC ceramics with $B_4C$ as an additive. The effect of a $B_4C$ addition on the microstructure of this system is also discussed.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.554-559
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• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.

• 한국세라믹학회지
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• 제20권2호
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• pp.99-106
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• 1983

This experiment has been carried out for the purpose of investigating the effect of $Ga_2O_3$ and $GeO_2$ additivies on sintering of magnesium oxide over the temperature range of 130$0^{\circ}C$~150$0^{\circ}C$. The effect of calcining temperature on the bulk densities of fired compacts prepared from this material was observed MgO powder has been obtained by calcining extra reagent grade magnesium carbonate(basic fired) at 90$0^{\circ}C$ for 30 minutes $Ga_2O_3$and GeO2 were added in the ratio of 1, 2, and 3 wt% to MgO and mixed with calcined MgO. The specimens were prepared by compression with pressure of $700kg/cm^2$ than fired at 130$0^{\circ}C$~150$0^{\circ}C$ for 0-5hrs. Sintering behaviour and microstructure of the fired specimens were examined. The optimum calcination temperature of magnesium carbonate was 90$0^{\circ}C$. Densification rates obeyed the equation D=K in t+c. Theoretical density in the case of addition of $Ga_2O_3$ was 23.1 kcal/mole in the case of the additive $GeO_2$ was 14.176kcal/mole. This low value would appear to support a machanism of grain boundatry diffusion The range of average grain size in the case of addition of $Ga_2O_3$ and $GeO_2$ was 21$\mu\textrm{m}$-31$\mu\textrm{m}$.

• 한국세라믹학회지
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• 제40권1호
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• pp.81-86
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• 2003

고상합성한 $CaTiO_3$와 $YAlO_3$의 혼합분말을 소결하여 조성에 따른 미세조직과 고주파 유전특성의 변화를 조사하였다. $CaTiO_3-YAlO_3$ 고용체의 고주파 유전특성은 조성에 민감하게 의존하였다. 최적의 유전특성은 $0.75CaTiO_3-0.25YAlO_3$를 $1500^{\circ}C$에서 3시간 소결하였을 때 유전율 47, 품질계수 35000. 공진주파수의 온도계수 +11 ppm/$^{\circ}C$이었다. 동일 조성을 저온에서 치밀화 시키기 위하여 $CaB_2O_4$를 첨가하였을때 $1200^{\circ}C$ 이상에서 완전 치밀화 되었으며. $1300^{\circ}C$에서 3시간 소결하였을 경우, 유전율 47, 품질계수 37000, 공진주파수의 온도계수 +17ppm/$^{\circ}C$로 유전특성의 저하 없이 저온에서 치밀한 소결체를 얻을 수 있었다. $CaB_2O_4$를 소결조제로 한 $CaTiO_3-YAlO_3$계 소결체는 5~7GHz에서 중간유전율과 높은 품질계수를 갖는 고주파용 유전재료로 활용이 기대된다.

• 한국세라믹학회지
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• 제41권12호
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• pp.884-888
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• 2004

Effects of NiO were studied in aspects of dielectric properties and microstructure of $0.96(0.91Pb(Mg_{1/3}Nb_{2/3})O_3-0.09PbTiO_3)­0.04BaTiO_3$ (PMN-PT-BT, PBT). The PBT was prepared by a conventional mixed oxide method using $(MgCO_3)_4{\cdot}Mg(OH)_2$ instead of MgO through Lewis acid-base interaction. NiO was added in the range of 0.5 to $3.0\;wt\%$ as thermally decomposable $2NiCO_3{\cdot}3Ni(OH)_2$ and it seemed to enhance densification to a large extent below $1000^{\circ}C$. But all the systems gave rise to ceramics with almost same relative sintered density of 96% by sintering at $1000^{\circ}C$ for 2 h. But it turned out that the addition of NiO was detrimental to dielectric constant but beneficial to the loss of dielectric constant.

• 한국재료학회지
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• 제6권5호
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• pp.489-493
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• 1996

다공질 실리콘층(Porous Silicon LayerLPSL)을 사용하여 저온 열산화 (50$0^{\circ}C$, 1시간)와 급속 열산화공정(rapid thermal oxidationLRTO)(115$0^{\circ}C$, 1분)을 통하여 저온 산화막을 제조하였다. 제조된 산화막의 특성을 IR흡수 스펙트럼, C-V 곡선, 절연파괴전압, 누설전류, 그리고 굴절률을 조사함으로써 알아보았다. 절연파괴전압은 2.7MV/cm, 누설전류는 0-50V 범위에서 100-500pA의 값을 보였다. 산화막의 굴절률은 1.49의 값으로서 열산화막의 굴절률에 근접한 값을 나타냈다. 이 결과로부터 다공질 실리콘층을 저온산화막으로 제조할 때, RTO공정이 산화막의 치밀화(densification)에 크게 기여함을 알 수 있었다.

• 한국세라믹학회지
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• 제49권1호
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• pp.100-104
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• 2012

Barium zincoborate (BZB) glass was added to $Ba_{0.5}Sr_{0.5}TiO_3$, and sintered at $875^{\circ}C$ for 2 h in air. When the BZB glass was added in quantities ranging from 15 to 20 wt%, the relative bulk density ranged from 93.1% to 94.2%, while the density decreased to roughly 81% thereafter up to 30 wt% glass addition. Quantitative XRD analysis showed that the $Ba_{0.5}Sr_{0.5}TiO_3$ filler was significantly dissolved into the BZB glass. However, no secondary phase was identified by XRD up to 30 wt% glass addition. The dielectric constant was about 130 to 140 at 1MHz up to 20 wt% BZB glass addition, while it decreased to about 60 thereafter, which may be ascribed to decreased density, partial dissolution of the $Ba_{0.5}Sr_{0.5}TiO_3$, and associated changes in the glass composition. The dielectric loss of the 20 wt% glass added specimen was 0.008.

• 한국표면공학회지
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• 제38권2호
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• 한국세라믹학회지
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• 제42권12호
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• pp.821-826
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• 2005

Gadolinia-doped ceria nanopowder was prepared by glycine-nitrate combustion method with different glycine/nitrate mixing ratio. The characteristics of the synthesized powder were investigated by X-ray diffraction method, transmission electron microscopy, thermal gravity, differential thermal analysis and thermo-mechanical analysis. The smallest powder was obtained with glycine/nitrate ratio 1.00 and the lowest organic and water vapor contained powder was made with glycine/nitrate ratio 1.75. According to dilatometry, fast densification was occurred around $1000^{\circ}C$ and shows full density over $1300^{\circ}C$. Finally near-fully dense ceria electrolyte was fabricated with conventional sintering technique. Glycine-nitrate process yields fine nanopowders which enable low temperature sintering and fabrication of fully dense and nanostructured oxide electrolyte.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.199-207
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• 1997

$Al_2O_3$/SiC particulate composites were fabircated by pressureless sintering. The dispersed phase was SiC of which the content was varied from 1.0 to 10 vol%. Three SiC powders having different median diameters from 0.28 $\mu\textrm{m}$ to 1.9 $\mu\textrm{m}$ were used. The microstructure became finer and more uniform as the SiC content increased except the 10 vol% specimens, which were sintered at a higher temperature. Under the same sintering condition, densification as well as grain growth was retarded more severly when the SiC content was higher or the SiC particle size was smaller. The highest flexural strength obtained at 5.0 vol% SiC regardless of the SiC particle size seemed to be owing to the finer and more uniform microstructures of the specimens. Annealing of the specimens at $1300^{\circ}C$ improved the strength in general and this annealing effect was good for the specimens containing as low as 1.0 vol% of SiC. Fracture toughness did not change appreciably with the SiC content but, for the composites containing 10 vol% SiC, a significantly higher toughness was obtained with the specimen containing 1.9$\mu\textrm{m}$ SiC particles.