• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.15-23
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• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

• Fashion & Textile Research Journal
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• v.14 no.6
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• pp.1024-1031
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• 2012

The thermal bonding PET fabrics were produced through high temperature steaming (HTS) of low melting PET yarn as warp and composite fancy yarn containing low melting PET yarn as weft. The low melting PET yarn of sheath-core structure consisted of a regular PET in core portion and low melting PET in sheath portion. The composite fancy yarn consisted of regular PET yarn as inner part and effect part and low melting PET yarn as binding part. This study was carried out to investigate the melting behavior of thermal bonded PET fabric, the effect of HTS on the thermal bonding, mechanical properties, and dyeing properties. The melting peak of low melting PET yarn showed two melting peaks caused by sheath-core structure. Almost the entire thermal bonding of the fancy PET fabrics containing low melting PET yarn has formed at $200^{\circ}C{\times}3min$ of HTS. The tensile strength in warp and weft direction of the fancy PET fabrics slightly decreased as temperature of HTS increased. The total K/S value of the fancy PET fabrics decreased slightly to $180^{\circ}C{\times}3min$ of HTS, while increased slightly above $200^{\circ}C{\times}3min$ of HTS. The changes in the hue angle ($H^{\circ}$) of the thermal bonded fancy PET fabrics dyed with disperse dyes hardly ever happened.

• Journal of the Korean Ceramic Society
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• v.31 no.4
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• pp.381-388
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• 1994

A new process which co-fires the low-firing-substrate and copper conductor was studied to achieve good bond strength and low sheet resistance of conductor. Cupric oxide is used as the precursor of conductive material in the new method and the firing atmosphere of the new process is changed sequently in air H2N2. The addition of cupric oxide and variations of firing atmosphere permited complete binder-burnout in comparison with the conventional method and contributed to the improvement of resistance and bonding behaviors. The potimum conditions of this experiment to obtain the satisfactory resistance and bond strength are as follows (binder-burnout temperature in air; 55$0^{\circ}C$, reducing temperature in H2; 40$0^{\circ}C$ for 30 min, ratio of copper and cupric oxide; 60:40~30:70 wt%). The bonding mechanism between the substrate and metal was explained by metal diffusion layer in the interface and the bond strength mainly depended on the stress caused by the difference of shrinkage and thermal expansion coefficient between the substrate and metal.

• Journal of the Korean Society of Safety
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• v.18 no.2
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• pp.79-85
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• 2003

In this study, the behavior characteristics of specimen strengthened with CFRP plate were analyzed according to the change of temperature. CFRP plate itself has a good resistance at the high temperature, but epoxy used as a adhesive is lost its bonding strength at the relatively low temperature. Therefore, this study carries out experiment on the beams slot-bonded with CFRP plates in order to maintain the successful bonding strength of epoxy at high temperature. It is presented that the range of glass transition temperature is 60-8$0^{\circ}C$ and RC beams slot-bonded with CFRP plate shows more increasing resistance and failure load than that of interface bonded at the high temperature.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.9-15
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• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.1-9
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• 2024

This paper addresses the significance of Cu/Polymer Hybrid Bonding technology in the advancement of semiconductor packaging. As the demands of the AI era increase, the semiconductor industry is exploring heterogeneous integration packaging technologies to achieve high I/O counts, low power consumption, efficient heat dissipation, multifunctionality, and miniaturization. The conventional Cu/SiO₂ Hybrid Bonding structure faces limitations such as achieving compatibility with CMP processes to attain surface roughness below 1nm and the occurrence of bonding defects due to particles. However, Cu/Polymer Hybrid Bonding technology, utilizing polymers, is gaining attention as a promising alternative to overcome these challenges. This study focuses on the deposition, patterning, and material properties of polymers essential for Cu/Polymer Hybrid Bonding, highlighting the advantages and potential applications of this technology compared to existing methods. Specifically, the use of polymers with low glass transition temperatures (Tg) is discussed for their benefits in low-temperature bonding processes and improved mechanical properties due to their high coefficients of thermal expansion. Furthermore, the study explores surface property modifications of polymers and the enhancement of bonding mechanisms through plasma treatment. This research emphasizes that Cu/Polymer Hybrid Bonding technology can serve as a critical breakthrough in developing high-performance, low-power semiconductor devices within the industry.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of Korea Foundry Society
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• v.38 no.1
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• pp.16-26
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• 2018

In this study, the effects of the pouring temperature, preheating temperature, surface condition and fraction of the wear resistant part on the production of duo-castings were investigated using a high Cr white cast iron with excellent abrasion resistance and a low Cr alloy steel with good toughness. The constituent materials of the duo-castings were designed to have high hardness, fracture toughness and abrasive wear resistance for the replacement of high Mn alloy steels with low abrasive wear resistance. In particular, the amount of abrasive wear of 17% Cr white cast iron was about 1/20 of that of high Mn alloy steel. There was an intermediate area of about 3mm due to local melting at the bonding interface of the duo-castings. These intermediate regions were different from those of the constituent materials in chemical composition and microstructure. This region led to fracture within the wear resistant part rather than at the bonding interface in the bending strength test. The bending fracture strengths were 516-824 MPa, which were equivalent to the bending proof strength of high Mn steel. The effects of various casting conditions on the duo-cast behavior were studied by simple pouring of low Cr alloy steel melt, but the results proved practically impossible to manufacture duo-castings with a sound bonding interface. However, the external heating method was suitable for the production of duo-castings with a sound bonding interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1106-1111
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• 2006

To improve warpage, delamination and the chemical reaction between 2 different co-fired materials, the bonding behavior with common glass was studied. As shown in the previous paper, the phenomenon of the infiltration is different with the composition of the glass. In particular, in the case of low temperature melting glass, infiltration is experimented in this study. GA-1 glass is infiltrated among $BaTiO_3$ particles below $800^{\circ}C$ and is made by glass/ceramic composite. Until the laminate is fired under $850^{\circ}C$, provskite phase is observed. Although in the case of GA-12 glass, the temperature of the glass infiltration is lower than it of GA-l glass, the perovskite phase already disappears at $800^{\circ}C$. As a result, GA-1 and GA-12 glasses are infiltrated among particles at low temperature, however, the chemical reactivity of the glass/ceramic and sintering temperature should be considered.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.109-114
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• 2021

We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200℃. In case of wet treatment, strong Cu-Cu bonding was observed above bonding temperature of 250℃.