• 제목/요약/키워드: Low switching energy

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Single-Phase Bridgeless Zeta PFC Converter with Reduced Conduction Losses

  • Khan, Shakil Ahamed;Rahim, Nasrudin Abd.;Bakar, Ab Halim Abu;Kwang, Tan Chia
    • Journal of Power Electronics
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    • 제15권2호
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    • pp.356-365
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    • 2015
  • This paper presents a new single phase front-end ac-dc bridgeless power factor correction (PFC) rectifier topology. The proposed converter achieves a high efficiency over a wide range of input and output voltages, a high power factor, low line current harmonics and both step up and step down voltage conversions. This topology is based on a non-inverting buck-boost (Zeta) converter. In this approach, the input diode bridge is removed and a maximum of one diode conducts in a complete switching period. This reduces the conduction losses and the thermal stresses on the switches when compare to existing PFC topologies. Inherent power factor correction is achieved by operating the converter in the discontinuous conduction mode (DCM) which leads to a simplified control circuit. The characteristics of the proposed design, principles of operation, steady state operation analysis, and control structure are described in this paper. An experimental prototype has been built to demonstrate the feasibility of the new converter. Simulation and experimental results are provided to verify the improved power quality at the AC mains and the lower conduction losses of the converter.

Design of a 12b SAR ADC for DMPPT Control in a Photovoltaic System

  • Rho, Sung-Chan;Lim, Shin-Il
    • IEIE Transactions on Smart Processing and Computing
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    • 제4권3호
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    • pp.189-193
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    • 2015
  • This paper provides the design techniques of a successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for distributed maximum power point tracking (DMPPT) control in a photovoltaic system. Both a top-plate sampling technique and a $V_{CM}$-based switching technique are applied to the 12b capacitor digital-to-analog converter (CDAC). With these techniques, we can implement a 12b SAR ADC with a 10b capacitor array digital-to-analog converter (DAC). To enhance the accuracy of the ADC, a single-to-differential converted DAC is exploited with the dual sampling technique during top-plate sampling. Simulation results show that the proposed ADC can achieve a signal-to-noise plus distortion ratio (SNDR) of 70.8dB, a spurious free dynamic range (SFDR) of 83.3dB and an effective number of bits (ENOB) of 11.5b with bipolar CMOS LDMOD (BCDMOS) $0.35{\mu}m$ technology. Total power consumption is 115uW under a supply voltage of 3.3V at a sampling frequency of 1.25MHz. And the figure of merit (FoM) is 32.68fJ/conversion-step.

넓은 충전전압 범위를 갖는 50kW급 고효율 급속충전기 개발 (Development of 50kW High Efficiency Fast Charger with Wide Charging Voltage Range)

  • 박준성;김민재;정헌수;김주하;최세완
    • 전력전자학회논문지
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    • 제21권3호
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    • pp.267-274
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    • 2016
  • In this study, a fast charger for electric vehicle with wide charging voltage range is proposed. To achieve high efficiency, three-level topologies are employed for the AC-DC and DC-DC converters. Given that the output range of the DC-DC converter in fast chargers is quite wide, the circulating current of conventional three-level converter will increase under low voltage condition. The proposed hybrid switching method mitigates this issue. When a coupled inductor is used on the output side, the circulating current is further reduced, and the switches $S_2$, $S_3$, $S_6$, and $S_7$ achieve turning-off under the ZCS condition. Experimental results from a 50 kW prototype are provided to validate the proposed charger, and a rated efficiency of 95.9% is obtained.

간단한 전류원 형태의 구조를 갖는 새로운 PDP 에너지 회수 회로 (A simple energy recovery circuit with current-fed type for plasma display panel (PDP))

  • 이강현;한상규;최성욱;김정은;문건우
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2005년도 전력전자학술대회 논문집
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    • pp.376-379
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    • 2005
  • High efficiency and low cost sustain driver for plasma display panel (PDP) with current fed is proposed. Main concept of the proposed circuit is using the current source to charge and discharge panel. As a result, all power switches can achieve the zero voltage switching (ZVS) and every auxiliary switch can also do the zero current switching (ZCS). Moreover, since the inductor current can compensate the discharge current, the current stress of all power switches can be reduced considerably. Furthermore, it has features as a simpler structure, less mass, less cost, and lower electromagnetic interference than prior circuit.

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Effect of NiO spin switching on the Fe film magnetic anisotropy in epitaxially grown Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems

  • 김원동;박주상;황찬용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.366-366
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    • 2010
  • Single crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by Low Energy Electron Diffraction (LEED), Magneto-Optic Kerr Effect (MOKE), and X-ray Magnetic Linear Dichorism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spins switch from out-of-plane direction in Fe/NiO/MgO(001) to in-plane direction in Fe/NiO/Ag(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a 90o-coupling between the in-plane NiO spins and the in-plane Fe spins which causes a switching of the NiO spins during the Fe magnetization reversal.

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V/비정질- $V_{2}$ $O_{5}$ /lV 박막소자에서의 양자화된 컨덕턴스 상태로의 문턱 스위칭 (Thereshold Switching into Conductance Quantized Sttes in V/vamorphous- $V_{2}$ $O_{5}$/V Thin Film Devices)

  • 윤의중
    • 전자공학회논문지D
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    • 제34D권12호
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    • pp.89-100
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    • 1997
  • This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

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제주 풍력발전 단지의 V47-660 kW 시스템의 역률개선에 관한 연구 (A Study on the Power Factor Improvement of V47-660 kW Wind Turbine Generation System in Jeju Wind Farm)

  • 김일환;전영진;김정웅;강경보;허종철;김건훈
    • 한국태양에너지학회 논문집
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    • 제23권3호
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    • pp.45-53
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    • 2003
  • This paper presents a study on the power factor improvement of V47- 660 [kW] Wind Turbine Generation System (WTGS) in Jeju wind farm, as a model system in this paper. In this system, the power factor correction is controlled by the conventional method with power condensor banks. Also, this system has only four bank steps, and each one capacitor bank step is cut in every one second when the generator has been cut in. This means that it is difficult to compensate the reactive power exactly according to the variation of them. Actually, model system has very low power factor in the area of low wind speed, which is almost from 4 to 6 [m/s]. This is caused by the power factor correction using power condenser bank. To improve the power factor in the area of low wind speed, we used the static var compensator(SVC) using current controlled PWM power converter using IGBT switching device. Finally, to verify the proposed method, the results of computer simulation using Psim program are presented to support the discussions.

Single Carrier Spectroscopy of Bisolitons on Si(001) Surfaces

  • Lyo, In-Whan
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.13-13
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    • 2010
  • Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

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Development of the High Input Voltage Self-Power for LVDC

  • Kim, Kuk-Hyeon;Kim, Soo-Yeon;Choi, Eun-Kyung;HwangBo, Chan;Park, Seong-Mi;Park, Sung-Jun
    • 한국산업융합학회 논문집
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    • 제24권4_1호
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    • pp.387-395
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    • 2021
  • Distributed resources such as renewable energy sources and ESS are connected to the low voltage direct current(LVDC) distribution network through the power conversion system(PCS). Control power is required for the operation of the PCS. In general, controller power is supplied from AC power or DC power through switch mode power supply(SMPS). However, the conventional SMPS has a low input voltage, so development and research on high input voltage self-power suitable for LVDC is insufficient. In this paper, to develop Self-Power that can be used for LVDC, the characteristics of the conventional topology are analyzed, and a series-input single-output flyback converter using a flux-sharing transformer for high voltage is designed. The high input voltage Self-Power was designed in the DCM(discontinuous current mode) to reduce the switching loss and solve the problem of current dissipation. In addition, since it operates even at low input voltage, it can be applied to many applications as well as LVDC. The validity of the proposed high input voltage self-power is verified through experiments.

A Magnetic Energy Recovery Switch Based Terminal Voltage Regulator for the Three-Phase Self-Excited Induction Generators in Renewable Energy Systems

  • Wei, Yewen;Kang, Longyun;Huang, Zhizhen;Li, Zhen;Cheng, Miao miao
    • Journal of Power Electronics
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    • 제15권5호
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    • pp.1305-1317
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    • 2015
  • Distributed generation systems (DGSs) have been getting more and more attention in terms of renewable energy use and new generation technologies in the past decades. The self-excited induction generator (SEIG) occupies an important role in the area of energy conversion due to its low cost, robustness and simple control. Unlike synchronous generators, the SEIG has to absorb capacitive reactive power from the outer device aiming to stabilize the terminal voltage at load changes. This paper presents a novel static VAR compensator (SVC) called a magnetic energy recovery switch (MERS) to serve as a voltage controller in SEIG powered DGSs. In addition, many small scale SEIGs, instead of a single large one, are applied and devoted to promote the generation efficiency. To begin with, an expandable mathematic model based on a d-q equivalent circuit is created for parallel SEIGs. The control method of the MERS is further improved with the objective of broadening its operating range and restraining current harmonics by parameter optimization. A hybrid control strategy is developed by taking both of the stand-alone and grid-connected modes into consideration. Then simulation and experiments are carried out in the case of single and double SEIG(s) generation. Finally, the measurement results verify that the proposed DGS with SVC-MERS achieves a better stability and higher feasibility. The major advantages of the mentioned variable reactive power supplier, when compared to the STATCOM, include the adoption of a small DC capacitor, line frequency switching, simple control and less loss.