• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.108-113
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• 2021

In this paper, a totem pole PFC was structured in two methods with FET and diode for low-speed switch while GaN FET was used for high-speed switch. Internal power loss, power conversion efficiency and steady-state characteristics of the two methods were compared in the totem pole bridgeless PFC circuit which is widely applied in large-capacity and high-efficiency switching rectifier of 500W or more. In order to compare and confirm the steady-state characteristics under equal conditions, a 2kW class totem pole bridgeless PFC was constructed and the experimental results were analyzed. From the experimental results, it was confirmed that the low-speed switch operation has a large difference in efficiency due to the internal conduction loss of the low-speed switch at a low input voltage. Especially, input power factor and load characteristic showed no difference regardless of the low-speed switch operation.