• 한국정밀공학회지
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• 제20권3호
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• pp.42-49
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• 2003

In this paper, we provide the results of polishing temperature distribution by way of infrared ray measurement system as well as polishing resistance, which can be interpreted as tribological aspects of CMP, using force measurement system. The results include the trend of polishing temperature, its distribution profile and temperature change during polishing. The results indicate that temperature affects greatly to the removal rate. Polishing temperature increases gradually and reaches steady state temperature and the period of temperature change occurs first tens of seconds. Furthermore, the friction force also varies as the same pattern with polishing temperature from high friction to low. These results suggest that the first period of the whole polishing time greatly affects the nonuniformity of removal rate.

• 한국해양공학회지
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• 제13권2호통권32호
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• pp.90-98
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• 1999

Boiler high-temperature pipelines such as main steam pipe, header and steam drum in fossil power plants are degraded by creep damage due to severe operationg conditions like high temperature and high pressure for an extended period time. Such material degradation lead to various component faliures causing serious accidents at the plant. Conventional measurement techniques such as replica method, electric resistance method, and hardness test method have such disadvantages as complex preparation and measurement procedures, too many control parameters, and therefore, low practicality and they were applied only to component surfaces with good accessibility. In this study, both artificial creep degradation test using life prediction formula and frequency analysis by ultrasonic tests for their preparing creep degraded specimens have been carried out for the purpose of nondestructive evaluation for creep damage which can occur in high-temperature pipelline of fossil power plant. As a result of ultrasonic tests for crept specimens, we confirmed that the high frequency side spectra decrease and central frequency components shift to low frequency bans, and bandwiths decrease as increasing creep damage in backwall echoes.

• Composites Research
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• 제18권4호
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• pp.21-26
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• 2005

탄소나노튜브 및 탄소나노섬유/에폭시 복합재료의 비파괴 손상감지능 및 응력전달 메카니즘이 전기-미세기계적 실험법을 통하여 조사되었다. 전기-미세기계적 실험법은 균일한 반복하중 하에서 전기저항을 측정함으로써 탄소나노복합재료의 감지반응을 평가하는 것이다. 큰 탄소섬유 부피 분율이 있는 복합재료가 에폭시 자체나 작은 부피 분율에 비하여 매우 큰 인장강도 특성을 보여주었다. 탄소나노섬유 복합재료는 제한된 온도범위 내에서 습도 감지능을 보여주었다. 형상비가 작은 탄소나노섬유 복합재료는 많이 첨가된 부피량에 기인하여 보다 큰 겉보기 탄성계수를 보여 주었다. 열처리된 전기 방사된 PVDF 나노섬유는 증대된 결정화에 기인하여 미처리의 경우보다 큰 기계적 특성을 보여 주었으며, 그 반면에 응력 감지능은 열처리의 경우에 감소를 보여 주었다. 전기 방사된 나노섬유는 또한 응력전달 뿐만 아니라 습도 및 온도에 대한 감지능도 나타내었다. 탄소나노튜브. 탄소나노섬유 및 전기 방사된 PVDF 나노섬유는 나노복합재료의 다기능에 응용할 수 있을 것이다.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.559-564
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• 2016

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

• ETRI Journal
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• 제38권6호
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• pp.1163-1171
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• 2016

Integration technologies involving flexible substrates are receiving significant attention owing the appearance of new products regarding wearable and Internet of Things technologies. There has been a continuous demand from the industry for a reliable bonding method applicable to a low-temperature process and flexible substrates. Up to now, however, an anisotropic conductive film (ACF) has been predominantly used in applications involving flexible substrates; we therefore suggest low-temperature lead-free soldering and bonding processes as a possible alternative for flex-on-flex applications. Test vehicles were designed on polyimide flexible substrates (FPCBs) to measure the contact resistances. Solder bumping was carried out using a solder-on-pad process with Solder Bump Maker based on Sn58Bi for low-temperature applications. In addition, thermocompression bonding of FPCBs was successfully demonstrated within the temperature of $150^{\circ}C$ using a newly developed fluxing underfill material with fluxing and curing capabilities at low temperature. The same FPCBs were bonded using commercially available ACFs in order to compare the joint properties with those of a joint formed using solder and an underfill. Both of the interconnections formed with Sn58Bi and ACF were examined through a contact resistance measurement, an $85^{\circ}C$ and 85% reliability test, and an SEM cross-sectional analysis.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권10호
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.139-143
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• 2005

For application of carbon nano-tube (CNT) as a counter electrode materials of dye-sensitized solar cell (DSSC), the electrochemical behavior of CNT electrode was studied, employing cyclic-voltammetry (C-V) and impedance spectroscopy. Fabrication of CNT-paste and formation of CNT-counter electrode for characteristic measurement have been carried out using ball-milling and doctor blade process, respectively. Unit cell for measurements was assembled using Pt electrode, CNT electrode, and iodine-embedded electrolyte. Field emission-scanning electron microscopy (FE-SEM) was used for structural investigation of CNT powder and electrode. Sheet resistance of electrode was measured with 4-point probe method. Electrochemical properties of electrode, C-V and impedance spectrum, were studied, employing potentiogalvanostat (EG&G 273A) and lock in amplifier (EG&G 5210). As a results, the sheet resistance of CNT electrode is almost similar to that of F-doped SnO2 (FTO) coated glass substrate as approximately 10 ohm/sq. From C-V and impedance spectroscopy measurements, it was found that CNT electrode has high reaction rate and low interface reaction resistance between CNT surface and electrolyte. These results provides that CNT electrode were superior to that of conventional Pt electrode. Particularly, the reaction rate in the CNT electrode is about thrice high than Pt electrode. Therefore. CNT electrode is to be good candidate material for counter electrode in DSSC.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.85.1-85.1
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• 2011

In this study, Grafoil$^{TM}$ which has comparable electric resistance and chemical stability but is flexible, fragile, and cheap material was adopted as bipolar plates for proton exchange membrane fuel cell(PEMFC) having only one straight line flow channel. Because of its flexibility, pressurizations of cell with various pressures showed different operating characteristics compared to ordinary graphite-used PEMFC. While performances of both cells decreased as these were pressurized, investigation of ohmic and faradaic resistance by electrochemical impedance measurement indicated different tendency of change. Ohmic resistance of graphite-used cell increased with increasing pressure, which is reversed in Grafoil$^{TM}$-used cell. It is speculated that effective chemical reaction area is decreased with increasing pressure in case of graphite-used one, but because of flexible property of Grafoil$^{TM}$, gas diffusion layer in Grafoil$^{TM}$-used cell was well-activated. Different rate of change of faradaic resistances in both cells support this supposition. However, although optimum point of pressurization is found, it is required to investigate other operating conditions because of low performance compared to graphite-used cell.

• 전자공학회논문지
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• 제51권12호
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• pp.59-65
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• 2014

다양한 게이트 핑거 수(Nf)의 MOSFET에 대한 두 종류의 입력 저항이 $S_{11}$-parameter와 $Z_{11}$-parameter으로부터 변환 되어 저주파 영역에서 측정되었다. 본 연구에서 사용된 $Nf{\leq}64$의 범위에서 $S_{11}$-parameter로부터 추출된 1/Nf 종속 입력저항은 $Z_{11}$-parameter로부터 추출된 입력 저항보다 훨씬 낮은 값을 보여주며, 이러한 1/Nf 종속성은 MOSFET의 등가회로로부터 유도된 Nf 종속 비선형 방정식으로부터 이론적으로 증명하였다.