• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.6-9
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• 2000

Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm $^{4}$I$_{13}$ 3/ to $^{4}$I/wub 15/2/ emissions of the multiple Er$^{3+}$ centers observed in Er-implante undoped and Mg-doped GAN at temperatures ranging from 6K to 295K. The temperature dependence of the Er$^{3+}$ PL spectra selectively excited by below -gap light demonstrates different quenching rates for the distinct Er$^{3+}$ centers, and indicates that the PL spectra with the most rapid thermal quenching rats do not contribute to the room temperature, above-p-pumped Er$^{3+}$ spectrum. In addition, selective PL spectroscopy has ben carried out on the Er$^{3+}$ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging 6K to 295K. The results indicate that the previously reported enhancement of the violet-pumped centers contribution to the low temperature above excited Er$^{3+}$ PL in Mg-doped GaN is also evident at room temperature.temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.129.2-129.2
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• 2013

Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.

• Asia-Pacific Journal of Business
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• v.13 no.2
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• pp.51-61
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• 2022

Purpose - This paper investigates how consumers' feelings of guilt affect their preference for imported products. Choosing imported products over domestic products reveals that consumers' motivation is to improve themselves. This study also tries to examine whether choosing imported goods has a restorative effect on feelings of guilt. Design/methodology/approach - We ran two experiments to test our hypothesis. Participants were recruited in China and the data analysis software used in this study was SPSS 26.0 for analysis. Findings - The results show that consumers with guilt feelings are more likely to import products than to consume domestic products, the second result shows that choosing imported products has an effect on guilt. In addition, consumers with low self-efficacy in a guilty condition prefer imported products to domestic products. Research implications or Originality - Based on previous research that focused on how guilt activates consumers' self-improvement goals, this study shows that when consumers experience feelings of guilt, they prefer imported products to reduce their negative feelings. These findings are discussed in the light of their implications for research on consumer self-motivation and ways of coping with it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.18-20
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• 2010

The mechanism for suppression of Ag agglomeration in Ag-Mg alloy ohmic contact to p-GaN is investigated. The Ag-Mg alloy ohmic contact shows low contact resistivity of $6.3\;{\times}\;10^{-5}\;{\Omega}cm^2$, high reflectance of 85.5% at 460 nm wavelength after annealing at $400^{\circ}C$ and better thermal stability than Ag contact The formation of Ga vacancies increase the net hole concentration, lowering the contact resistivity. Moreover, the oxidation of Mg atoms in Ag film increase the work function of Ag-Mg alloy contact and prevents Ag oxidation. The inhibition of oxygen diffusion by Mg oxide suppresses the Ag agglomeration, leading to enhance light reflectance and thermal stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.113-117
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• 2020

In this paper, We investigated the effect of heat treatment process using photo-thermal effect in order to improve mechanical properties of nanostructure on polymer films made by nanoimprint process with hybrid resin. Nanostructures which have a low refractive characteristic were fabricated by UV nanoimprint and after that heat treatment was performed using IPL (intense pulsed light) under process condition of 550 V voltage, pulse width 5 ms, frequency 0.5 Hz. The transmittance and mechanical property of fabricated nanostructure films were evaluated to observe changes in the pattern transfer rate and mechanical properties of nanostructures. The transmittance of the nanostructure was measured at 97.6% at 550 nm wavelength. Nanoindentation was performed to identify improved anti-scatch properties. Result was compared by the heat source. In case of post treatment with IPL, hardness was 0.51 GPa and in the case of hotplate was 0.27 GPa, resulting the increase of hardness of 1.8 times. Elastic modulus of IPL treated sample was 5.9GPa and Hotplate treated one was 4GPa, showing the 1.4 time increase.

• Korean Journal of Environment and Ecology
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• v.25 no.6
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• pp.893-902
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• 2011

The purpose of this study was to survey structures and growth conditions of Pinus densiflora village groves, and to establish management strategies for their desirable growth and conservation. Twelve village groves were selected in western Gangwon province for the study. The age of the study groves ranged from 50 to 200 years. Average dbh (diameter at breast height) and density of trees for each study grove were 27~52cm and 0.5~9.3 trees/$100m^2$, respectively. Soil environments were favorable to Pinus densiflora growth in the majority of the study groves, but 2 study groves with sandy soils showed considerably poor nutrient contents. Low tree vitality was found in some of the study groves due to poor conditions of root growth from soil fill and trampling. There were detachment of cambial tissue and damage of stem cavity at 6 study groves, which were caused by artificial injury, careless pruning, and frost damage. Light disease damage by Rhizosphaera kalkhoffii and phomopsis blight were found at 6 study groves. Light pest damage by Thecodiplosis japonensis was also found at 6 study groves, but the pest damage at 2 study groves was relatively considerable. Thus, major factors limiting normal growth of Pinus densiflora village groves were infertility, soil fill and trampling, stem damage, and disease and pest. Desirable management strategies were explored to solve growth-related problems and to conserve the study groves. The management strategies included fertilization of organic matter and lime, removal of soil fill, soil plowing and graveling, wood-trail installation or woodchip mulching, supply of wood fences and protective frames, surgical operation for damaged stems, vitality enhancement, and trunk injection to improve growth environments or control stem damage and disease/pest.

• Korean Journal of Food Science and Technology
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• v.51 no.6
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• pp.610-614
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• 2019

The effect of broccoli extracts on the storage stability of red beet extracts under various conditions (temperature, light condition, and pH) was analyzed. Regardless of the pH and light conditions, the absorbance of the red beet pigment at 537 nm was relatively stable (less than 10% reduction) at 4℃ for up to 5 days. The absorbance of the control extracts was rapidly reduced during storage at an ambient temperature in the dark, but the degree of reduction was relatively low at pH 3.8. As a positive control, the addition of vitamin C to the control extracts slightly inhibited the reduction (40% reduction), but the degree of the inhibition was much higher (15% reduction) with the addition of broccoli extracts (in 70% ethanol). Among all the samples, the addition of the broccoli floret extracts using 70% ethanol was the most effective method for the enhancement of the storage stability of red beet pigment at an ambient temperature in the dark.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.88-94
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• 2019

Triplet-triplet annihilation upconversion (TTA-UC) is a photochemical process wherein two or more low-energy photons are converted to a high-energy photon through a special energy transfer mechanism. Herein, we report a strategy to enhance the efficiency of TTA-UC through the light-scattering effect induced by silica microparticles (SM) embedded in polymeric thin films. By incorporating monodisperse uniform silica microparticles with a uniform size of 950 nm synthesized by $St{\ddot{o}}ber$-based seeded growth method into UC polymeric thin films, the UC intensity in the 430-570 nm range was enhanced by as much as 64% when irradiated by 635 nm laser. Analyzing the lifetime of PdTPBP phosphorescence revealed that the presence of SM in the UC layer does not affect triplet-triplet energy transfer (TTET) between sensitizers and acceptors, supporting the enhancement of TTA-UC originated from the light-scattering effect. On the other hand, the incorporation of SM in UC layer is shown to enhance the triplet-triplet annihilation (TTA) efficiency, which results in a 1.5-fold increase of the ${\Phi}_{UC}$, by scattering light source and thus increasing the number of excited photons to be utilized in TTA-UC process.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.342-347
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• 2011

We fabricated the silicon nanodots using the low pressure chemical vapor deposition technique to investigate their electron field emission characteristics. Atomic force microscope measurements performed for the silicon nanodot samples having various process parameters, such as, deposition time and deposition pressure, revealed that the silicon nanodots with an average size of 20 nm, height of 5 nm, and density of $1.3\;{\times}\;10^{11}\;cm^{-2}$ were easily formed. Electron field emission measurements were performed with the silicon nanodot layer as the cathode electrode. The current-voltage curves revealed that the threshold electric field was as low as $8.3\;V/{\mu}m$ and the field enhancement factor reached as large as 698, which is compatible with the silicon cathode tips fabricated by other techniques. These electron field emission results point to the possibility of using a silicon-based light source for display devices.