• Progress in Superconductivity
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• 제5권2호
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• pp.94-97
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• 2004

Step-edge Josephson junctions (SEJ) have been fabricated on sapphire substrates with in situ deposited films of CeO$_2$ buffer layer and YBa$_2$Cu$_3$O$_{7}$ films on the low angle steps. Direct coupled SQUID magnetometers with the SEJ were formed on 1 cm X 1 cm R-plane sapphire substrates. Typical 5-${\mu}{\textrm}{m}$-wide Josephson junctions have R$_{N}$ of 3 Ω and I$_{c}$ of 50 $mutextrm{A}$ at 77 K. The direct coupled SQUID magnetometers were designed to have pickup coils of 50-${\mu}{\textrm}{m}$-wide 16 parallel loops on the 1 cm X 1 cm substrates with outer dimension of 8.8 mm X 8.8 mm. The SEJ SQUID magnetometers exhibit relatively low 1/f noise even with dc bias control, and could be stably controlled by flux-locked loops in the magnetically disturbed environment. Field noise of the do SQUID was measured to be 200∼300 fT/Hz$^{1}$2/in the white noise region and about 2 pT/Hz$^{1}$2/ at 1 Hz when measured with dc bias method.hod.d.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.970-973
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• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.954-957
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• 2007

We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage and a very low curing intensity are effective in fabricating the cell with a high bright state, a low dark state and therefore a steep T-V curve. However, the response time of the cell is slow. Finally, a dual-frequency PSLC pi cell with fast response time is developed. The obtained result reveals that the dual-frequency PSLC pi cell has a fast response of under 1ms.

• 전기학회논문지
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• 제60권4호
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• pp.871-876
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• 2011

In this paper, a voltage-controlled frequency tunable current-mode integrator and a 3rd-order current-mode Chebyshev filter in 1.8V-$0.18{\mu}m$ CMOS is realized for software radio applications in system-on-chips. This filter is used for reconstruction purposes between a current-steering DAC and a current-mode mixer. Power consumption of the designed filter can be reduced by using a current-mode small size integrator. And also, cutoff frequency of this filter is variable between 1.2MHz and 10.1MHz, the power consumption is 2.85mW. And the voltage bias compensated circuit is used to control the voltage variation.in the designed filter.

• 전자공학회논문지A
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• 제31A권10호
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• pp.71-78
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• 1994

We have developed GaAs power metal semiconductor field effect transistors (MESFETs) for 4.7V operation under 900 MHz using a low-high deped structures grown by molecular beam epitaxy (MBE). The fabricted MESFETs with a gate widty of 7.5 mm and a gate length of 1.0.mu.m show a saturated drain current (Idss) of 1.7A and an uniform transconductance (Gm) of around 600mS, for gate bias ranged from -2.4 V to 0.5 V. The gate-drain breakdown voltage is measured to be higher than 25 V. The measured rf characteristics of the MESFETs at a frequency of 900 MHz are the output power of 31.4 dBm and the power added efficiency of 63% at a drain bias of 4.7 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• 한국표면공학회지
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• 제31권5호
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• pp.245-250
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• 1998

There is clear pressing need to reduce bias field(Ha,) used on linear magenetomechanical resonator tag by at least a factor of two to allow low-bias operation near the frequency minimum since reducing Ha causes a dramatic increase in well depth, which implies increased stability. However, this makes it more difficult to maintain tight frequncy specs. It can be solved by a reduction of magnetomechanical coupling(k). We determined from an equivalent circuit model that optimal reduced, k, is near 0.3 Also, We determiend the material properties($lambda_s$, :saturated magenetostriction, $M_s$, and,$H_a$) that give k=0.3. From these evaluations, we suggested that on optimal comosition with adequate mathrial properties is $Fe_{55}Co_{15}Cr_6Nb_2B_{18}Si_4$.

• 분석과학
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• 제7권2호
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• pp.155-164
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• 1994

전형적인 Grimm형 방전관을 제작하고 고주파 방전에 의한 금속 및 세라믹시료 분석에 적용하였다. 금속 알루미늄과 알루미나에 대해 방출 스펙트럼을 관찰하였고 방전에 미치는 고주파의 전력과 알곤 기체의 압력에 대한 영향을 관찰하였으며, 시료와 접촉된 전극에 나타나는 DC-bias voltage를 확인하였다. 또한 SEM 사진을 관찰함으로써 rf-sputtering에 의한 알루미나 표면의 미세구조를 확인하였다. 저합금강(BAS 404-405) 중의 망간성분과 황동시료(NIST 1108-1117) 중의 아연성분에 대해 검량곡선을 작성한 결과 양호한 직선성을 보여 주었다.

• 한국통신학회논문지
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• 제21권12호
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• pp.3215-3226
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• 1996

In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.