• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.15-19
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• 2016

The gate bias dependence of kink phenomenon with a large deviation from the resistance circle in Smith chart is observed in the frequency response of $S_{11}$-parameter for large multi-finger RF MOSFETs. For the first time, this bias dependence is analyzed by measuring magnitude and phase of $S_{11}$-parameter, input resistance and input capacitance. As a result, $V_{gs}$ dependent $S_{11}$-parameter is largely changed by the magnitude of input capacitance as well as dominant pole and zero frequencies of input resistance. At $V_{gs}=0V$, the kink phenomenon occurs in the high frequency region because of very small phase difference of $S_{11}$-parameter and high pole frequency of input resistance. However, the kink phenomenon at higher $V_{gs}$ is generated in the low frequency region owing to large phase difference and low pole frequency.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.10
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• pp.1477-1483
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• 2013

This paper proposes a low-voltage current-mode integrator for a continuous-time current-mode baseband channel selection filter. The low-voltage current-mode linear cascode integrator is introduced to offer advantages of high current gain and improved unity-gain frequency. The proposed current-mode integrator has fully differential input and output structure consisting of CMOS complementary circuit. Additional cascode transistors which are operated in linear region are inserted for bias to achieve the low-voltage feature. Frequency range is also controllable by selecting proper bias voltage. From simulation results, it can be noticed that the implemented integrator achieves design specification such as low-voltage operation, current gain, and unity gain frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.1
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• pp.94-99
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• 1997

There are several factors that have influence on the phase noise of an oscillator. But one of the major factors is the flicker noise of a transistor, since the phase noise of an oscillator is generated by mixing the carrier with the low frequency noise near the DC having the characteristic of 1/f. In this paper, we have presented a method on reducing the phase noise of an oscillator by using a low-frequency feedback circuit based on an active bias circuit, and have fabricated a DRO for a DBS receiver. Measurement results show that the phase noise is -92 dBc/Hz at the 10 KHz offset frequency, and from these results we have found out that the reduction method is very effective.

• Phonetics and Speech Sciences
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• v.4 no.1
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• pp.55-65
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• 2012

In this study, the prosodic disambiguation of the syntactic attachment differences was investigated in relation to the effect of lexical bias. Speech materials were composed of N1-conj-N2-PP phrases such as "walkers and runners with dogs." The results show that the use of durational pattern is dominant over the pitch pattern to differentiate the attachment differences. The characteristic pitch contour was the rise and fall over N1 and N2 in the high attachment. The pitch contour in the low attachment was the rise and fall over N2 and N3 although the frequency of such patterns was lower for the low attachment case. For the durational pattern, the lengthening in the N2 region plays a significant role in the disambiguation of the syntactic attachments. The interaction between the lexical bias and the syntactic attachment was not statistically significant in the duration data.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.10
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• pp.840-847
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• 1989

It is an important problem that the plasma of high B value is to be confined safely in the research of plasma fusion. So, the Reversed Field Pinch (RFP) plasma has been studied. RFP is stable pinch having self-reversal phenomenon that forms reversed field of itself, but its process of formation is unstable. Therefore, in this paper, we configured the stable RFP by supplying the radio-frequency rotating field just before the RFP is configured by self-reversal phenomenon. Moreover, when conductivity wall is used, toroidal configured by self-reversal phenomenon. Moreover, when conductivity wall is used, toroidal flux is subject to heavy fluctuation in case of high bias field compared with low bias field.

• Proceedings of the KSMRM Conference
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• 2002.11a
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• pp.98-98
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• 2002

목적： RF Coil sensitivity 또는 MRI system의 여러 요인들로 인해서 생길 수 있는 영상의 Bias field 즉, 유난히 밝거나 어두운 부분을 raw data 의 low frequency 값들을 임의로 변화를 줌으로써 어느 정도 보정이 가능하다. 대상 및 방법： Bias field로 인해서 분석에 어려움이 있는 이미지의 k-space 데이터를 가지고 있으면 부위에 상관없이 모두 가능하다. k-space에서 얻어진 raw data를 Kx와 Ky의 2-D로 표현한 후에 DC 성분에 해당하는 영점을 그대로 놔둔 상태에서 영점 주변으로 일정 범위 안에 있는 low frequency 성분 값들을 FT(Fourier Transform)를 거치기 전에 0으로 바꾼 후에 image processing을 거치도록 한다.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.214-217
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• 1989

The most attractive feature of semiconductor lasers as sources for coherent optical communication system is the ability to produce frequency modulation by modulation of the bias current. The frequency deviation of semiconductor lasers under direct modulation depends on the laser structure and modulation frequency. This paper describes a circuit modeling techniques for the directly frequency modulated CSP (Channeled Substrated Planner) semiconductor laser. Predictions from this model are compared with the other published results of sinusoidal frequency modulation below than 1 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.543-546
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• 2004

Bias and frequency-dependent impedance is a technique for the investigation of complex conductivity. At low frequency, complex impedance is dominated by resistive component, and at high frequency by capacitive component. We are going to present the results of the bias and frequency-dependent complex impedance in the device structure of $ITO/Alq_3/Al$ in the temperature range between 10K and 300k. And we will show to change radius of Cole-Cole plot. It will be decrease resistance by temperature. Also equivalent electrical circuit and dielectric relaxation can be accomplished by using the complex impedance analysis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.326-333
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• 2015

This paper reports an adaptive positive feedback bias control technique for operational transconductance amplifiers to adjust the bias current based on the output current monitored by a current replica circuit. This technique enables operational transconductance amplifiers to quickly adapt their power consumption to various analog workloads when they are configured with negative feedback. To prove the concept, a test voltage follower is fabricated in $0.5-{\mu}m$ CMOS technology. Measurement result shows that the power consumption of the test voltage follower is approximately linearly proportional to the load capacitance, the signal frequency, and the signal amplitude for sinusoidal inputs as well as square pulses.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.41-45
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• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.