• Title/Summary/Keyword: Low dielectric constant

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Calculation of Field Enhancement Factor in CNT-Cathodes Dependence on Dielectric Constant of Bonding Materials

  • Kim, Tae-Sik;Shin, Heo-Young;Cho, Young-Rae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1092-1095
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    • 2005
  • The effect of the dielectric constant (${\varepsilon}$) of bonding materials in screen-printed carbon nanotube cathode on field enhancement factor was investigated using the ANSYS software for high-efficient CNT-cathodes. The field enhancement factor increased with decreasing the dielectric constant and reaching a maximum value when the dielectric constant is 1, the value for a vacuum. This indicates that the best bonding materials for screen-printing CNT cathodes should have a low dielectric constant and this can be used as criteria for selecting bonding materials for use in CNT pastes for high-efficient CNT-cathodes

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Highly flexible dielectric composite based on passivated single-wall carbon nanotubes (SWNTs)

  • Jeong, Hyeon-Taek;Kim, Yong-Ryeol
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.1
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    • pp.40-47
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    • 2015
  • Single-walled carbon nanotubes (SWNTs) was modified with various length of linear alkyl chains and passivated to form dielectric filler. The modified SWNTs embedded into epoxy matrix to fabricate a flexible composite with high dielectric constant. The dielectric behavior of the composite was significantly changed with various alkyl chain length(n) of pyrene. The dielectric constant of the epoxy/SWNTs composite significantly increased with respect to increase in length of alkyl chain at the frequency range from 10 to 105Hz (n=12and18).We also found that the passivated epoxy/SWNTs composite with high dielectric constant presented low dielectric loss. The resulted dielectric performances corresponded to de-bundling of nanotubes and their distribution behavior in the matrix in terms of tail length of alkyl pyrene in the passivation layer.

Effect of the Front Dielectric Layer on the Efficacy of the Plasma Display Panel

  • Moon, Won-Seok;Oh, Jin-Mok;Seo, Byung-Hwa;Lee, Sung-Wook;Byun, Na-Mi;Cho, Yun-Hui;Ryu, Byung-Gil;Kim, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.31-34
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    • 2009
  • We investigated the effect of relative dielectric constant of front dielectric layer on the efficacy of plasma display panel. Dielectric materials with relative dielectric constant of around 6 and 7 were developed. When the front dielectric layer had a low relative dielectric constant, power consumption decreased more than luminance did. And it led to efficacy enhancement. However, the minimum sustain voltage increased.

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Method for Measuring Dielectric Constant of Planar Dielectric Substrate (판형 유전체의 유전율 측정 방법)

  • Lee, Chang-Hyun;Kwon, Taek-Sun;Lee, Jeong-Hae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.10
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    • pp.799-804
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    • 2018
  • In this paper, a method for measuring the dielectric constant of a planar dielectric substrate using the free space material constant measurement method in a general measurement environment is proposed. Two horn antennas and a network analyzer were used for S-parameter measurement and the transmission and reflection coefficients of a planar dielectric substrate were calculated from the measurement results. To obtain a reliable dielectric constant in a low-precision-measurement environment, only the magnitude of the transmission coefficient, which has a small error due to the measurement environment, is used for dielectric constant estimation. Finally, the dielectric constant is determined by comparing the measured results at different frequencies.

A new low dielectric constant barium titanate - poly (methyl methacrylate) nanocomposite films

  • Upadhyay, Ravindra H.;Deshmukh, Rajendra R.
    • Advances in materials Research
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    • v.2 no.2
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    • pp.99-109
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    • 2013
  • In the present investigation, nanocomposite films with poly(methyl methacrylate) (PMMA) as a polymer matrix and barium titanate as a filler were prepared by solution casting method. Barium titanate nano particles were prepared using Ti(IV) triethanolaminato isopropoxide and hydrated barium hydroxide as precursors and tetra methyl ammonium hydroxide (TMAH) as a base. The nanocomposite films were characterized using XRD, FTIR, SEM and dielectric spectroscopy techniques. Dielectric measurements were performed in the frequency range 100 Hz-10 MHz. Dielectric constant of nanocomposites were found to depend on the frequency, the temperature and the filler fraction. Dissipation factors were also influenced by the frequency and the temperature but not much influenced by the filler fractions. The 10 wt% of BT-PMMA nanocomposite had the lowest dielectric constant of 3.58 and dielectric loss tangent of 0.024 at 1MHz and $25^{\circ}C$. The dielectric mixing model of Modified Lichtenecker showed the close fit to the experimental data.

Low-operating voltage Pentacene FETs with High dielectric constant polymeric gate dielectrics and its hyteresis behavior

  • Park, Chan-Eon
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.168-168
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    • 2006
  • Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

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Characterization of In-Situ Film Thickness and Chamber Condition of Low-K PECVD Process with Impedance Analysis

  • Kim, Dae Kyoung;Jang, Hae-Gyu;Kim, Yong-Tae;Kim, Hoon-Bae;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.461-461
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    • 2010
  • For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

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An Approach to Estimate Dielectric Constant of Low-Loss Materials Using Dielectric Slab Loaded Cylindrical Cavity Resonators (유전체 슬랩이 삽입된 원통형 공진기를 이용한 저손실 물질의 유전 상수 측정)

  • Lee, Won-Hui
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.10
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    • pp.1115-1121
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    • 2008
  • In this paper, dielectric slab loaded cylindrical cavity resonator measurement technique is presented to determine the dielectric constant of a dielectric material. The dielectric constant is measured by the resonant frequency deviation of empty and dielectric slab loaded cavity. Characteristic equations are derived by th exact field analysis. The measurement configurations are formed using HP8719A vector network analyzer and an experimental cylindrical metallic cavity with circular cross-section. The validity of the theory is confirmed by experiments and CST MWS 4.0(3D simulator). The results were in the whole satisfactory. The measured dielectric constant of teflon and bakelite are 2.03 and 4.44, respectively.

Dielectric Properties of Complex Cconcentration in IMI-0 Thin Films (IMI-O 초박막의 착체농도에 대한 유전 특성)

  • 정상범;유승엽;박재철;권영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.345-348
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    • 1999
  • The monolayer behaviors at the air-water interface and the dielectric properties of MI-0 LB films for complex concentration were investigated by the surface pressure-area ($\pi$-A) isotherms and dielectric constant. The molecular area was expanded with increase of metal ions concentration. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains andhydrophobic increase of ionic strength. In the frequency-dependent complex dielectric constant at room temperature, the real part of dielectric constant($\varepsilon'$) is about 6.0~10.0 in the low-frequency range and is decreasing slowly upto $1O^4$Hz. It decreased abruptly near $1O^5Hz$. It seems to be dielectric dispersion in this frequency range. Also, the imaginary part of dielectric constant ($\varepsilon"$) shows a peak in $1O^5$~$1O^6Hz$. It seems to be dielectric absorption in this frequency range.ange.

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Epoxy/BaTiO3 (SrTiO3) composite films and pastes for high dielectric constant and low tolerance embedded capacitors fabrication in organic substrates

  • Paik Kyung-Wook;Hyun Jin-Gul;Lee Sangyong;Jang Kyung-Woon
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2005.09a
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    • pp.201-212
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    • 2005
  • [ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

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