• 한국세라믹학회지
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• 제49권6호
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• pp.586-591
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• 2012

$Zr_2WP_2O_{12}$ powder, which has a negative thermal expansion coefficient, was synthesized by a solid-state reaction with $ZrO_2$, $WO_3$ and $NH_4H_2PO_4$ as the starting materials. The synthesis behavior was dependent on the solvent media used in the wet mixing process. The $Zr_2WP_2O_{12}$ powder prepared with a solvent consisting of D. I. water was fully crystallized at $1200^{\circ}C$, showing a sub-micron particle size. According to the results obtained from a thermal analysis, a $ZrP_2O_7$ was synthesized at a low temperature of $310^{\circ}C$, after which it was reacted with $WO_3$ at $1200^{\circ}C$. A new sintering additive, $Al(OH)_3$, was applied for the densification of the $Zr_2WP_2O_{12}$ powders. The cold isostatically pressed samples were densified with 1 wt% $Al(OH)_3$ additive or more at $1200^{\circ}C$ for 4 h. The main densification mechanism was liquid-phase sintering due to the liquid which resulted from the reaction with amorphous or unstable $Al_2O_3$ and $WO_3$. The densified $Zr_2WP_2O_{12}$ ceramics showed a relative density of 90% and a negative thermal expansion coefficient of $-3.4{\times}10^{-6}/^{\circ}C$. When using ${\alpha}-Al_2O_3$ as the sintering agent, densification was not observed at $1200^{\circ}C$.

• 한국세라믹학회지
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• 제56권1호
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• pp.104-110
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• 2019

The low-temperature sintering behavior of AlN was investigated through a conventional method. $CaF_2$, CuO and Cu were selected as additives based on their low melting points. When sintered at $1600^{\circ}C$ for 8 h in $N_2$ atmosphere, a sample density > 98% was obtained. The X-ray data indicated that eutectic reactions below $1200^{\circ}C$ were found. Therefore, the current systems have lower liquid formation temperatures than other systems. The liquid phase showed high dihedral angles at triple grain junctions, indicating that the liquid had poor wettability on the grain surfaces. Eventually, the liquid was likely to vaporize due to the unfavorable wetting condition. As a result, a microstructure with clean grain boundaries was obtained, resulting in higher contiguity between grains. From EDS analysis, oxygen impurity seems to be well removed in AlN lattice. Therefore, it is believed that the current systems are beneficial for reducing sintering temperature and improving oxygen removal.

• 한국세라믹학회지
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• 제55권6호
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• pp.576-580
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• 2018

In this study, a small amount of CoO was added to commercial Gd-doped $CeO_2$ (GDC) powder. The CoO addition greatly enhanced sinterability at low temperatures, i.e., more than 98% of relative density was achieved at $1,000^{\circ}C$. When GDC/8YSZ (8 mol% yttrium stabilized zirconia) bilayers were sintered, Co-doped GDC showed excellent adhesion to the YSZ electrolyte. Transmission electron microscope (TEM) analysis showed that there were no traces of liquid films at the grain boundaries of GDC, whereas liquid films were observed in the Co-doped GDC sample. Because liquid films facilitate particle rearrangement and migration during sintering, mechanical stresses at the interface of a bilayer, which are developed based on different densification rates between the layers, might be reduced. In spite of $Co^{2+}$ doping in GDC, the electrical conductivity was not significantly changed, relative to GDC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.14-17
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• 1995

In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.50.1-50.1
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• 2011

Lead-free ceramics with a composition of 0.55 mol%$K_4CuNb_8O_23-(K_{1-x}Na_x)NbO_3$ (KCN-KNNx) where $0.45{\leq}x{\leq}0.60$ were synthesized by conventional ceramic processing. Results revealed that the addition of Na was effective in changing the microstructure and relative density of KCN-KNNx. Further, the addition of Na resulted in a slight shift of the phase transition temperatures (To-t and Tc) toward low values. A high mechanical quality factor (Qm) of 1850 was found atx=0.54, which might be due to the build-up of an internal bias field (Ei) within KCN. Thermal hysteresis in KNNx was confirmed with an increase in the Na content during the heating and cooling cycles, resulting from structural changes. Thus, KCN-KNNx with x=0.54 exhibits excellent piezoelectric properties with d33 (97 pC/N), kp (36%), and Qm (1850), being promising candidates for application in high-power piezoelectric devices.

• 마이크로전자및패키징학회지
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• 제8권2호
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• pp.9-13
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• 2001

$(Ba_{0.5}Pb_{0.5})Nd_2Ti_5O_{14}$(마이크로파 유전체 세라믹스에 borosilicate계 유리를 첨가하여 저온소결 특성과 마이크로파 특성을 조사하였다. Borosilicate계 유리가 2~3 wt% 첨가된 경우 $950^{\circ}C$의 소결 온도에서 소결성이 향상됨과 동시에 품질계수도 놀아지는 것을 확인할 수 있었다. BPNT에 3 wt%의 유리를 첨가함으로써 $950^{\circ}C$에서 유전율은 90에서 75 정도로 약간의 감소를 보였으나 마이크로파 품질계수 (Q$\times$f)는 4500 정도로 잘 유지되었고 공진주파수의 온도계수도 +10 $ppm/^{\circ}C$로서 잘 유지되는 결과를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.760-763
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• 2003

Low Temperature Cofired Ceramics (LTCC) technology is a promising technology to integrate many devices in a module by embedding passive components. For the module substrate, most LTCC structures have dielectric constants below 10 to reduce signal delay time. Some components, which need high dielectric constants, have not been yet embedded in LTCC module. So, embedding capacitor with high capacitance by applying another dielectrics with high dielectric constants in LTCC is an important issue to maximize circuit density in LTCC module. In this study, electrical properties of embedded capacitor fabricated by dielectric paste of high dielectric constants (K-100) and co-firing behavior with LTCC were investigated. To prevent camber development of co-fired structure, constrained sintering process was tested. Dielectric properties of embedded capacitors were calculated from their capacitance and impedance value. Temperature coefficient of capacitance were also measured.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.207-207
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• 2008

Modern industry has focused on processing that produce low- loss dielectric substrates used complex micron-sized devices using tick film technologies such as tape casting and slip casting. However, these processes have inherent disadvantages fabricating high density interconnect with embedded passives for high speed communication electronic devices. Here, we have successfully fabricated porous alumina dielectric layer infiltrated with polymer solution by using inkjet printing process. Alumina suspensions were formulated as dielectric ink that were optimized to use in inkjet process. The layer was confirmed by field emission scanning electron microscope (FE-SEM) for measuring microstructure and volume fraction. In addition, the reaction kinetics and electrical properties were characterized by FT-IR and the impedance analyzer. The volume fraction of alumina in porous dielectric alumina layer is around 70% much higher than that in the conventional process. Furthermore, after infiltration on the dielectric layer using polymer resins such as cyanate ester. Excellent Q factors of the dielectric is about 200 when confirmed by impedance analyzer without any high temperature process.

• 한국세라믹학회지
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• 제35권12호
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• pp.1294-1300
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• 1998

Yttria-stabilized zirconia ceramics with irregular grain shapes and curved grain boundaries was prepared by ceria doping. The amount of ceria doped into zirconia compacts by a dipping method were at range of 2 to 20 mol% Irregular grain shapes and curved grain boundaries were formed only inspecimens doped with more than 8mol% cerial. Ceria-doped specimens showed large grain size and low sintered density compared with pure yttria-stabilized zirconia which was due to the increase in the contents of stabilizer and cubic phase. The amount of doped ceria was larger on the surface than the inside regions and therefore mi-crostructure and phase on the surface were different from those in the inside regions. Transgranular frac-ture mode was observed ion ceria doped specimens due to irregular large grain sizes.