• 한국정밀공학회지
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• 제23권9호
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• pp.102-110
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• 2006

We discuss two possibilities of using femtosecond pulse lasers as a new interferometric light source for enhanced precision surface-profile metrology. First, a train of ultra-fast laser pulses yields repeated low temporal coherence, which allows unequal-path scanning interferometry, which is not feasible with white light. Second, the high spatial coherence of femtosecond pulse lasers enables large-sized optics to be tested in nonsymmetric configurations with relatively small-sized reference surfaces. These two advantages are verified experimentally using Fizeau and Twyman-Green type scanning interferometers.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.204-207
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• 2005

We discuss two possibilities of using femtosecond pulse lasers as a new interferometric light source fer enhanced precision surface profile metrology. First, a train of ultra-fast laser pulses yields repeated low temporal coherence, which allows performing unequal-path scanning interferometry that is not feasible with white light. Second, high spatial coherence of femtosecond pulse lasers enables to test large size optics in non-symmetric configurations with relatively small size reference surfaces. These two advantages are verified experimentally using Fizeau and Twyman-Green type scanning interferometers.

• 한국정밀공학회지
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• 제34권2호
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• pp.107-114
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• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.

• 전자공학회논문지A
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• 제33A권10호
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• pp.160-167
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• 1996

A new pathlength deviation detection technique which is composed of michelson interferometer is described and verified experimentally. The technique uses a sub-threshold biased visible laser diode of 20$\mu$m coherence length as a low-coherent light source. And for zeroth-order fringe(which is the largest among fringes) identification we used a piezoelectric transducer with a large modulation smplitude, which enables without the need of constant velocity scanning, to distinguish reflection surfaces separated by more than 10$\mu$m with a resolution of less than half-wavelength.

• 한국광학회지
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• 제20권1호
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• pp.29-33
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• 2009

본 연구에서는 저간섭성 반사계(Optical low-coherence reflectometry)를 이용하여 한 번의 측정으로 투명 시료의 두께와 굴절률을 동시에 측정하는 기술을 제안하였다. 제안된 방법은 유한 반경을 가진 시준된 광속을 시료의 경계 영역으로 입사시키는 것으로써, 시료가 있는 부분과 없는 부분으로부터 반사된 광속에 의한 간섭 무늬들을 한 번에 획득할 수 있다. 한번의 측정을 통해 얻어진 두 종류 간섭 무늬들의 상대적인 위치 차이를 이용하여 시료의 두께와 굴절률을 동시에 결정할 수 있었다. 굴절률의 정밀도는 이송장치의 위치 정밀도가 향상되고, 시료의 두께가 두꺼워 질수록 개선될 수 있으며, 본 실험에서는 약 $10^{-3}$의 정밀도로 굴절률을 결정할 수 있었다.