• Journal of the Korean Society for Precision Engineering
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• v.23 no.9 s.186
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• pp.102-110
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• 2006

We discuss two possibilities of using femtosecond pulse lasers as a new interferometric light source for enhanced precision surface-profile metrology. First, a train of ultra-fast laser pulses yields repeated low temporal coherence, which allows unequal-path scanning interferometry, which is not feasible with white light. Second, the high spatial coherence of femtosecond pulse lasers enables large-sized optics to be tested in nonsymmetric configurations with relatively small-sized reference surfaces. These two advantages are verified experimentally using Fizeau and Twyman-Green type scanning interferometers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.204-207
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• 2005

We discuss two possibilities of using femtosecond pulse lasers as a new interferometric light source fer enhanced precision surface profile metrology. First, a train of ultra-fast laser pulses yields repeated low temporal coherence, which allows performing unequal-path scanning interferometry that is not feasible with white light. Second, high spatial coherence of femtosecond pulse lasers enables to test large size optics in non-symmetric configurations with relatively small size reference surfaces. These two advantages are verified experimentally using Fizeau and Twyman-Green type scanning interferometers.

• Journal of the Korean Society for Precision Engineering
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• v.34 no.2
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• pp.107-114
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• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.160-167
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• 1996

A new pathlength deviation detection technique which is composed of michelson interferometer is described and verified experimentally. The technique uses a sub-threshold biased visible laser diode of 20$\mu$m coherence length as a low-coherent light source. And for zeroth-order fringe(which is the largest among fringes) identification we used a piezoelectric transducer with a large modulation smplitude, which enables without the need of constant velocity scanning, to distinguish reflection surfaces separated by more than 10$\mu$m with a resolution of less than half-wavelength.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.29-33
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• 2009

We propose a new measuring technique based on optical low-coherence reflectometry that enables us to determine the refractive index and the geometrical thickness of a transparent sample by one-time scanning only. By passing a collimated beam having a finite size through the edge of the sample, the refractive index and the geometrical thickness can be determined simultaneously from the comparison of interferograms generated by two kinds of reflected beams. In this study, a refractive index could be determined with the accuracy of $10^{-3}$, and its accuracy would be enhanced by using a more precise translator and a thicker sample.