• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.315-315
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• 2016

The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.43-43
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• 2010

We have characterized the parametric and functional properties of live cell and cancer cell according to plasma treatment conditions using Atmospheric Pressure (AP) Plasma with uniquely designed low temperature arc-free unit. AP plasma system showed very highly efficient capabilities of reacting and interfacing directly with live and cancer cells. The parametric results with the types of gases, applied power, applied gap, and process times on cells will be presented in accordance with functional studies of the works. The growth of cancer cells is directly influenced by AP plasma exposure with evaluating plasma conditions in several human cancer cells and understanding how plasma exposure alters molecular signaling pathways. The cells exhibit a slower or faster growth rates compared with untreated cells, depending on the cell types. These results strongly support the conclusion that alterations in one or more of each gene are responsible, at least in part, for plasma-induced apoptosis in cancer cells. In addition, it also will be presented that AP plasma has an important role for the improvement of sensor performance due to excellent interface property between enzyme and metal electrode for bio sensor manufacturing process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.42-42
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• 2008

Considerable attention has been focused on the applications of flexible liquid crystal (LC)-based displays because of their many potential advantages, such as portability, durability, light weight, thin packaging, flexibility, and low power consumption. To develop flexible LCDs that are capable of delivering high-quality moving images, like conventional glass-substrate LCDs, the LC device structure must have a stable alignment layer of LC molecules, concurrently support uniform cell gaps, and tightly bind two flexible substrates under external tension. However, stable LC molecular alignment has not been achieved because of the layerless LC alignment, and consequently high-quality images cannot be guaranteed. To solve these critical problems, we have proposed a PDMS pixel-wall based bonding method via the IB irradiation was developed for fasten the two substrates together strongly and maintain uniform cell gaps. The effect of the IB irradiation on PDMS with PI surface was also evaluated by side structure configuration and a result of x-ray photoelectron spectroscopic analysis of PDMS interlayer as a function of binder with substrates. large number of PDMS pixel-walls are tightly fastened to the surface of each flexible substrate and could maintain a constant cell gap between the LC molecules without using any other epoxy or polymer. To enhance the electro-optical performance of the LC device, we applied an alignment method that creates pretilt angle on the PI surface via ion beam irradiation. Using this approach, our flexible LCDs have a contrast ratio of 132:1 and a response time of about 15 ms, resulting in highly reliable electro-optical performance in the bent state, comparable to that of glass-substrate LCDs.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.461-466
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• 2007

There has been a great interest in printing technology as a low cost and mass production method for the application of printed electronics such as printed TFT, solar cell, RFID Tag, printed battery, and so on. In this study, apparatuses of gravure-offset printing are developed for fine line-width/gap printing and examining pattern distortion occurred in gravure-offset printing process. The fine line-width/gap pattern shows that it is possible to make around 20 micro-meter line-width/gap printing patterns. Pattern distortion is modeled, and the amount and shape of the distortion are calculated by using commercial FEM code. The roll-to-roll printing system under development consists of unwinder/rewinder, two printing units, one coating unit, drying units, guiding unit, vision system, and other auxiliary devices. For multi-layer printing, the system is designed to be capable of printing two different materials.

• Journal of Cancer Prevention
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• 제21권2호
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• pp.95-103
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• 2016

Background: Excess energy supply induces chronic low-grade inflammation in association with oxidative stress in various tissues including intestinal epithelium. The objective of this study was to investigate the effect of high-fat diet (HFD) on intestinal cell membrane integrity and intestinal tumorigenesis in $Apc^{Min/+}$ mice. Methods: Mice were fed with either normal diet (ND) or HFD for 12 weeks. The number of intestinal tumors were counted and biomarkers of endotoxemia, oxidative stress, and inflammation were determined. Changes in intestinal integrity was measured by fluorescein isothiocyanate (FITC)-dextran penetration and membrane gap junction protein expression. Results: HFD group had significantly higher number of tumors compared to ND group (P < 0.05). Blood total antioxidant capacity was lower in HFD group, while colonic 8-hydroxy-2'-deoxyguanosine level, a marker of oxidative damage, was higher in HFD group compared to that of ND group (P < 0.05). The penetration of FITC-dextran was substantially increased in HFD group (P < 0.05) while the expressions of membrane gap junction proteins including zonula occludens-1, claudin-1, and occludin were lower in HFD group (P < 0.05) compared to those in ND group. Serum concentration of lipopolysaccharide (LPS) receptor (CD14) and colonic toll-like receptor 4 (a LPS receptor) mRNA expression were significantly higher in HFD group than in ND group (P < 0.05), suggesting that significant endotoxemia may occur in HFD group due to the increased membrane permeability. Serum interleukin-6 concentration and myeloperoxidase activity were also higher in HFD group compared to those of ND group (P < 0.05). Conclusions: HFD increases oxidative stress disrupting intestinal gap junction proteins, thereby accelerating membrane permeability endotoxemia, inflammation, and intestinal tumorigenesis.

• 항공우주시스템공학회지
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• 제14권3호
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• pp.51-59
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• 2020

초소형 위성인 큐브위성의 경우 위성체의 제한적인 중량 및 부피를 고려하여 경량화 및 전기적 회로설계 측면에서 유리한 PCB 기반의 전개형 태양전지판이 폭넓게 적용되고 있으나, PCB의 낮은 두께 방향 열전도율로 인해 태양전지셀의 방열이 어려운 점이 있다. 본 논문에서 제안한 6U 큐브위성용 태양전지판은 PCB 기반의 태양전지판으로 제작되고, 판넬 외곽에 장착된 알루미늄 보강재 접속부에 열전도 패드가 적용된다. 따라서 판넬 전면부의 태양전지셀에서 방열면인 판넬 후면으로 열전달이 원활하도록 하여 PCB 적용에 따른 장점을 유지하면서도 방열성능을 극대화함으로서 태양전지셀 온도 하강에 따른 전력생성효율 향상이 가능한 장점을 갖는다. 본 연구에서 제안된 열전도 패드가 적용된 태양전지판의 열제어 측면에서의 유효성 입증을 위해 궤도 열해석을 통해 기존 PCB 태양전지판과 비교 분석을 실시하였다.

• 한국수소및신에너지학회논문집
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• 제21권4호
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• pp.295-300
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• 2010

Metal bipolar plate applied to Polymer Electrolyte Membrane Fuel Cell is getting most attractive due to their good feasibility of mass production and low cost. But it is one of the immediate causes of performance decline because it is difficult to reduce channel pitch of metal bipolar plate. In this study, mesh was inserted in between bipolar plate and GDL to obtain uniform contact pressure without reducing channel pitch. The section measuring and performance test were carried out to confirm the mesh structure distributes contact pressure equally in reacting area. The performance of 3 type mesh structures developed in this study were higher than the normal cell at all over the current range. Especially, it showed that the mesh cell performance was increased and pressure drop was decreased with diminishing mesh gap size. The Mesh structure was more sensitive to humidification and contact pressure change than the normal cell.

• 청정기술
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• 제16권4호
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• pp.292-296
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• 2010

황화납(PbS)을 감응물질로 하는 양자점 감응형 태양전지를 제작하고 효율을 측정해 보았다. 기판에 산화아연(ZnO) 나노선을 기른 후 SILAR(Successive ionic layer adsorption and reaction)법으로 PbS 양자점을 합성하고 이를 주사전자현미경(SEM), X-선 회절(XRD)을 통해 확인하였다. SILAR를 통해서 형성된 나노이종구조는 PbS 나노입자들이 ZnO 나노선 위에 균일하게 성장한 것을 확인할 수 있었다. 본 실험에서 PbS을 이용한 양자점 감응형 태양전지의 최고 효율은 one sun에서 0.075%로 나타났으며, 이는 기존의 다른 감응 물질에 비해 비교적 낮은 효율을 나타내었다. 이러한 요인으로는 i) ZnO와 PbS의 밴드갭 배열이 Type-I 형을 이룰 수 있는 가능성, ii) 다양한 크기의 밴드갭을 가지는 PbS에 의한 전자이동 방해 효과, iii) 전해질에 의한 PbS의 안정성 저하 등의 이유를 생각해 볼 수 있으며, 이를 해결하기 위해서는 PbS의 크기분포 조절과 새로운 전해질에 대한 연구가 향후 필요할 것으로 생각된다.

• 한국발생생물학회지:발생과생식
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• 제21권3호
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• pp.317-325
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• 2017

Direct communication between neighboring cells through connexin (Cx)-based gap junction is a crucial biological manner to regulate functions of a tissue consisting of multi-cell types. The present research evaluated expressional changes of Cx isoforms in the caput epididymis of adult rat exposed to estradiol benzoate (EB) or flutamide (Flu) at the early postnatal age. A single subcutaneous administration of EB at a low-dose [$0.015{\mu}g/kg$ body weight (BW)] or a high-dose ($1.5{\mu}g/kg\;BW$) or Flu at a low-dose ($500{\mu}g/kg\;BW$) or a high-dose (5 mg/kg BW) was performed to an animal at 1 week of age. Quantitative real-time PCR analysis was employed to determine expressional changes of Cx isoforms. The transcript levels of Cxs30.3 and 37 were decreased by a low-dose EB treatment, while decreases of Cxs31, 31.1, 32, 40, and 45 transcript levels were observed with a low-dose EB treatment. The treatment of a high-dose EB resulted in expressional reduction of Cxs30.3, 31, 31.1, 37, 40, 43, and 45. The Flu treatment at a low dose caused increases of Cxs26, 37, and 40 transcript levels but decreases of Cxs31.1, 43, and 45 transcript levels. Increases of Cxs30.3, 31, 37, and 40 mRNA amounts were induced by a high-dose Flu treatment. However, exposure to a high-dose Flu produced expressional decreases of Cxs31.1, 32, and 43 in the adult caput epididymis. These observations suggest that exposure to EB or Flu at the neonatal period could lead to aberrant expression of Cx isoforms in the adult caput epididymis.