• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• Journal of Welding and Joining
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• v.7 no.4
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• pp.12-21
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• 1989

Laser beam welding parameters have experimentally investigated, using a continuous wave 3kW $CO_2$ laser with the various travel speeds, beam mode and laser beam power in low carbon steels. An optimum position of focus and the effect of shielding gas on penetration depth with varying the flow range of 0.5 to 5.1m/min have been combined to investigate the effect of laser power and travel speed on penetration depth and bead width. It is found that the optimum position of focus in 3kW class laser is 0.5 to 1.5mm below the surface of the material. The flow rate of shielding gas affects the penetration depth and He is more effective than Ar. The penetration depth in laser welds of low carbon steels is between two and four times of the bead width. Laser beam welding of butt joints in 2mm thick carbon steel has been carried out to establish a weldability lobe. The lobe indicating acceptable welding conditions is introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.387-394
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• 2006

In this study, the effect of using a neutral beam formed by low-angle forward reflection of a reactive ion beam on aspect-ratio-dependent etching (ARDE) has been investigated. When a SF6 Inductively Coupled Plasma and $SF_6$ ion beam etching are used to etch poly-Si, ARDE is observed and the etching of poly-Si on $SiO_2$ shows a higher ARDE effect than the etching of poly-Si on Si. However, by using neutral beam etching with neutral beam directionality higher than 70 %, ARDE during poly-Si etching by $SF_6$ can be effectively removed, regardless of the sample conditions. The mechanism for the removal of ARDE via a directional neutral beam has been demonstrated through a computer simulation of different nanoscale features by using the two-dimensional XOOPIC code and the TRIM code.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.485-486
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• 2012

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.216-226
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• 2015

The neutral beam injection generate ultra-high temperature energy in the tokamak of nuclear fusion. The neutral beam injection make up arc power supply, filament power supply and acceleration & deceleration power supply. The arc power supply has characteristics of low voltage and high current. Arc power supply generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The proposed buck converter used parallel switch because it can be increased capacity and decrease conduction loss. When an arc generated, the neutral beam injection chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus the proposed converter should be designed for the characteristics of low voltage and high current. Also, the arc power supply should be guaranteed for system stability. The proposed parallel buck converter enables the system stability of the divided low output voltage and high current. The proposed converter with constant output be the most important design of the output inductor. In this paper, designed arc power supply verified operation of system and stability through simulation and prototype. After it is applied to the 288[kW] arc power supply for neutral beam injection.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.785-790
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• 1999

This research has been carried out to develop a low-energy large-aperture pulsed electron beam generator (LELA), 200keV 1A, for industrial applications. One of the most important feature of this electron beam generator is large electron beam cross section of $190cm^2$. Low energy electron beam generators have been used for water cleaning, flue gas cleaning, and pasteurization, etc. In these applications the cross sectionof the e-beam is related to reaction efficiency. Another important feature of this LELA EB generator is easy maintenance because of its simple structure and relatively low vacuum operation compared to the conventional EB generators. The conventional EB generators need to be scanned because the small cross section thermal electron emitters are used in the conventional EB generators which have small EB cross section. In this research, we use the secondary electrons generated by ion bombardment on the HV cathode surface as a electron source. Therefore we can make any shape of EB cross section without scanning.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2006.11a
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• pp.252-257
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• 2006

Low vibration characteristics of a vehicle are mainly influenced by the local stiffness of the joint structure beam section. The method of substituting equivalent beam element to spring element for the joint is presented. Formation process of the equivalent beam joint modeling is described in terms of key section properties. To get required dynamic characteristics section properties of the equivalent beam element are set to design variables. The study shows that the equivalent beam joint model can be effectively used for low frequency vibration analysis of a vehicle.

• Journal of the Korean Society of Industry Convergence
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• v.15 no.3
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• pp.71-77
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• 2012

This study gives the optimal reaction conditions, reaction mechanisms, reaction rates leaded from the oxidation of phenol by electron beam accelerator and ozone used for recent water treatment. It gives the new possibility of water treatment process to effectively manage industrial sewage containing toxic organic compounds and biological refractory materials. The high decomposition of phenol was observed at the low dose rate, but at this low dose rate, the reaction time was lengthened. So we must find out the optimal dose rate to promote high oxidation of reactants. The reason why the TOC value of aqueous solution wasn't decreased at the low dose was that there were a lot of low molecular organic acids as an intermediates such as formic acid or glyoxalic acid. In order to use both electron beam accelerator and biological treatment for high concentration refractory organic compounds, biological treatment is needed when low molecular organic compounds exist abundantly in sewage. In this experiment, the condition of making a lot of organic acids is from 5 kGy into 20 kGy dose. Decomposition rate of phenol by electron beam accelerator was first order reaction up to 300ppm phenol solution on the basic of TOC value and also showed first order reaction by using both air and ozone as an oxidants.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.1
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• pp.23-26
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• 2003

In this study, a neutral beam was formed using a low angle forward reflection of the ion beam and its degree of neutralization at different reflection angles was investigated. When the ion beam was reflected by a reflector at the angles lower than 15$^{\circ}$, most of the ions reflected were neutralized and the lower reflector angle showed the higher degree of neutralization. Photoresist(PR) and SiO$_2$ etchings were carried out with the neutralized oxygen and fluorine radical fluxes, respectively, and highly anisotropic etch profiles could be obtained suggesting the formation of highly directional neutral flux.