• Journal of Power Electronics
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• v.16 no.4
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• pp.1494-1503
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• 2016

Power quality promotion has received increasing attention because of the wide use of semiconductor devices in recent decades. Reactive power regulation is crucial to ensuring the stable operation of power systems. In this study, a continuous reactive power controller, which is referred to as a parallel-connected magnetic energy recovery switch (MERS), is developed to regulate voltage or power factor in power grids. First, the operating principle is introduced, and a mathematical model is built. Second, a new control method for restraining current harmonics and the peak voltages of capacitors is presented. Using the proposed method, the MERS shows a wide range in terms of reactive power compensation. Finally, the performance of the proposed controller is demonstrated through computer simulations and experiments. Unlike STATCOMs, the proposed controller entails low losses, adopts a small dc capacitor, and offers ease of use.

• Journal of Power Electronics
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• v.9 no.3
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• pp.447-455
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• 2009

The power supply systems, which require low-voltage / high-current output has been changing from the conventional centralized power system to a distributed power system. The distributed power system consists of a bus converter and POL. The most important factor is the system stability in bus architecture design. The overlap between the output impedance of a bus converter input impedance of POL causes system instability and has been an actual problem. By increasing the bus capacitor, the system stability can be easily improved. However, due to limited space on the system board, the increasing of bus capacitors is impractical. An urgent solution of this issue is strongly desired. This paper presents the output impedance design for on-board distributed power system by means of three control schemes of a bus converter. The output impedance peak of the bus converter and the input impedance of the POL are analyzed and then conformed experimentally for stability criterion. Furthermore, the design process of each control schemes for system stability is proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.524-533
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• 2017

This paper presents a novel reset scheme for mm-scale sensing systems with stringent volume and area constraints. In such systems, multi-layer structure is required to maximize the silicon area per volume and minimize the system size. The multi-layer structure requires wirebonding connections for power delivery and communication among layers, but the area overhead for wirebonding pads can be significant. The proposed reset scheme exploits already existing power wires and thus does not require additional wires for system-wide reset operation. To implement the proposed reset scheme, a power management unit is designed to impose reset condition, and a reset detector is designed to interpret the reset condition indicated by the power wires. The reset detector uses a coupling capacitor for the initial power-up and a feedback path to hold the developed supply voltage. The prototype reset detector is fabricated in a $180-{\mu}m$ CMOS process, and the measurement results with the prototype mm-scale system confirmed robust reset operation over a wide range of temperatures and voltages.

• Journal of Sensor Science and Technology
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• v.27 no.4
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• pp.269-274
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• 2018

High-sensitivity signal-to-noise ratio (SNR) microphones are essentially required for a broad range of automatic speech recognition applications. Piezoelectric microphones have several advantages compared to conventional capacitor microphones including high stiffness and high SNR. In this study, we designed a new piezoelectric membrane structure by using the finite elements method (FEM) and an optimization technique to improve the sensitivity of the transducer, which has a high-quality AlN piezoelectric thin film. The simulation demonstrated that the sensitivity critically depends on the inner radius of the top electrode, the outer radius of the membrane, and the thickness of the piezoelectric film in the microphone. The optimized piezoelectric transducer structure showed a much higher sensitivity than that of the conventional piezoelectric transducer structure. This study provides a visible path to realize micro-scale high-sensitivity piezoelectric microphones that have a simple manufacturing process, wide range of frequency and low DC bias voltage.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1038-1039
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• 2008

This paper proposes a base models of Hybrid railway vehicle power system. A powered system with fuel cell is regarded as a high current and low voltage source. The design parameters of the system should be chosen by taking into account the characteristics of the fuel cell, so the costs of the power system at given operating conditions can be reduced. Currently, no integrated simulation has been approached to analyze interrelated effects. Therefore, the base models of power conversion system with a PEM fuel cell/IPT system for hybrid powered system that includes the PEM fuel cell stack, DC/DC converter are developed. Concept of bidirectional converter for super capacitor charging system is presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.33-38
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• 2000

In this study, multilayer piezoelectric actuators were fabricated with 75 layers by a conventional multi-layer capacitor (MLC) techniques, using 70Ag/30Pd paste as an internal electrode which can be sintered at low temperature and have cost down effect in mass productions. The multilayer piezoelectric actua-tors had no defects such as diffusions of internal electrode to ceramic bodies and shortages of internal electrodes. The multilayer piezoelectric actuators did not show the crack in the ceramics parts and the gapping phenomena in the external eletrodes when Ag paste was used as external electrodes. The multilayer piezoelectric actuators showed a maximum displacement of 4${\mu}{\textrm}{m}$ at 100V dc voltage and kept the maximum displacement constant for 300 seconds. The multilayer piezoelectric actuators showed good matching properties between ceramic bodies and AgPd internal electrodes. We confirmed the possibility of large-scaled production of the multilayer piezoelectric actuators with superior electrical properties and cost down effect using 70Ag/30Pd paste as an internal electrodes.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.55-58
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T=1.5V$, while the simulated value was 1.0GHz at $V_T=1.5V$. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.