• Title/Summary/Keyword: Low Voltage Capacitor

검색결과 529건 처리시간 0.027초

SILC 특성에 의한 실리콘 산화막의 신뢰성 연구 (The Study of Reliability by SILC Characteristics in Silicon Oxides)

  • 강창수
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.17-20
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    • 2002
  • This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4A to 814A with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ The oxide charge state of traps generated by the stress high voltage contain either a positive or negative charge.

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Improved Active Power Filter Performance Based on an Indirect Current Control Technique

  • Adel, Mohamed;Zaid, Sherif;Mahgoub, Osama
    • Journal of Power Electronics
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    • 제11권6호
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    • pp.931-937
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    • 2011
  • This paper presents a method for the performance improvement of a shunt active power filter (SAPF) using the indirect current control (ICC) scheme. Compared to the conventional direct current control (DCC) scheme, the ICC gives better performance with a lower number of sensors. A simplified and efficient control algorithm using a low cost Intel 80C196KC microcontroller is implemented using only two current sensors for the source current and one voltage sensor for the DC-link voltage of the SAPF circuit. The objective is to eliminate harmonics and to compensate the reactive power produced by non-linear loads such as an uncontrolled rectifier feeding an inductive load. The APF is realized using a three phase voltage source inverter (VSI) with a dc bus capacitor. Experimental results are presented to prove the better performance of the ICC method over the DCC one.

Pull-in과 release 전압차 감소용 돌기구조를 갖는 비틀림형 초소형 기계적 스위칭 소자 (Torsional Micromechanical Switching Element Including Bumps for Reducing the Voltage Difference Between Pull-in and Release)

  • 하종민;한승오;박정호
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권9호
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    • pp.471-475
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    • 2001
  • ln this paper, a micromachined micromechanical switch is presented. The presented switch is operated in the vertical direction to the substrate by an electrostatic force between two parallel plates. The moving plate is pulled down to connect the bumps of the bias node$(V_{DD}/ or GND)$ to the bumps of the output node when a oltage difference exists between the moving plate and the input plate. The switch was designed to operate at a low switching voltage$(\risingdotseq5V)$ by including a large-area, narrow-gap, parallel plate capacitor A theoretical analysis of the designed switch was performed in order to determine its geometry fitting the desired pull-in voltage and release voltage. The designed switch was fabricated by surface micromachining combined with Ni electroplating. From the experimental results of the fabricated switch, its pull-in voltage came Out to be less than 5V and the measured maximum allowable current was 150mA. The measured average ON-state resistance was about 8$\Omega$, and the OFF-state resistance was too high to be measured with digital multimeter.

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W-TiN 금속 게이트를 사용한 금속-산화막-반도체 소자의 특성 분석 (Investigation of the W-TiN gate for Metal-Oxide-Semiconductor Devices)

  • 윤선필;노관종;양성우;노용한;장영철;김기수;이내응
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.318-321
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    • 2000
  • We showed that the change of Ar to $N_2$flow during the TiN deposition by the reactive sputtering decides the crystallinity of LPCVD W, as well as the electrical properties of the W-TiN/SiO$_2$Si capacitor. In particular, the threshold voltage can be controlled by the Ar to $N_2$ratio. As compared to the results obtained from the LPCVD W/SiO$_2$/Si MOS capacitor, the insertion of approximately 50 nm TiN film effectively prohibits the fluorine diffusion during the deposition and annealing of W films, resulting in negligible leakage currents at the low electric fields.

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낮은 전압의 Super Capacitor String 사용이 가능한 EV용 Modified Boost Converter (Modified Boost Converter for EV Using Low Voltage Super Capacitor String)

  • 공성재;김다솜;김세민;강경수;노정욱
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2016년도 전력전자학술대회 논문집
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    • pp.267-268
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    • 2016
  • 기존 EV용 모터구동 Boost Converter의 경우, 모터 기동 시 필요한 순간적인 큰 전류를 배터리에서 공급하기 때문에 배터리의 수명이 감소되는 문제점이 있다. 이를 해결하기 위해 출력 단에 Super Cap. String을 사용하여 순간적으로 필요한 큰 전류를 공급하였다. 하지만 Super Cap. String은 높은 전압을 견뎌야 하기 때문에 회로의 전체적인 부피가 커지고 원가를 증가시키는 문제점이 있다. 본 논문에서는 낮은 내압의 Super Cap. String을 사용 할 수 있는 Modified Boost Converter를 제안한다. 제안 회로는 Super Cap. String을 사용하여 배터리의 효율을 극대화 시킬 수 있으며, Super Cap. String의 직렬 연결 개수 감소로 회로의 소형화 및 원가 저감이 가능하다. 본 논문에서는 제안된 회로의 이론적 특성을 분석하고 모의실험을 통해 제안회로의 우수성을 검증하였다.

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고조파 전류원에 의한 콘덴서 임피던스 특성 해석 (Analysis of Impedance Performance for Condenser by Harmonic Current Source)

  • 김종겸;박영진
    • 조명전기설비학회논문지
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    • 제25권4호
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    • pp.57-64
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    • 2011
  • Most of the user has been used linear load and non-linear load. The former is usually inductive load which is needed power factor compensation, the latter is power conversion system device. Actually two kinds of load is used together in the customer application. Generally capacitor is used for power-factor compensation of inductive load and reduction harmonics of non linear load with reactor. Non-linear load generates harmonic current for its energy conversion process. If harmonic current pass along the low impedance side of distribution system, the magnification of voltage and current is appeared by the series and parallel resonance. As a result, condenser has received a bitter electrical stress by the harmonic component. In this paper, we analyzed that how resonance is changed by the 5-th harmonic current pattern and proposed an alternative plan for non-magnification.

PZN-BT-PT계 복합 세라믹스의 유전특성에 관한 연구 (Dielectric properties of PZN-BT-PT composite ceramics)

  • 이용우;류주현;윤현상;박창엽;정영호;하복남
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.41-44
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    • 1998
  • (1-X)LTC-XHTC composites were manufactured with the variation of X in the range of 0.3 $\leq$X $\leq$0.6 and its dielectric properties were investigated. Here, LTC and HTC are PZN-BT-PT -based ceramics with quire temperature(Tc) of 100。 C-3$0^{\circ}C$, respectively. 0.6HTC-0.4LTC composite ceramics show excellent values of $\Delta$$\varepsilon$$_{r}$/$\varepsilon$[%] which were -7.1% at -2$0^{\circ}C$ and -12% at 5$0^{\circ}C$, respectively. It is thought that composite ceramics with above results can be applied to electrostrictive actuator, high voltage ceramic capacitor etc.mic capacitor etc.r etc.c.

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인버터의 직류단 전해 커패시터 고장 진단 (Fault Diagnosis of DC Link Electrolytic Capacitors in Inverter)

  • 양진규
    • 전력전자학회논문지
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    • 제18권2호
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    • pp.145-152
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    • 2013
  • Electrolytic capacitors used for smoothing DC link voltage is one of the major root causes of fault in power electronic system. The aging of aluminum electrolytic capacitors is expressed by the increase of their equivalent series resistance (ESR) and the reduction of their capacitance. Thus, the proposed technique in this paper is to measure capacitance, by comparing energy loss of DC link capacitors with stator resistor in electric machine. Condition of DC link capacitors can be estimated from the capacitance decrease rate between initial and aged capacitors. The results show that the proposed technique provides an easy, widely applicable and simple low cost solution for detecting dc link capacitor degradation.

DRAM반도체 소자의 최근 기술동향 (Recent technology trend of DRAM semiconductor device)

  • 박종우
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.157-164
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    • 1994
  • DRAM(Dynamic Random Access Memory)은 반도체 소자중 가장 대표적인 기억소자로, switch역활을 하는 1개의 transistor와 data의 전하를 축적하는 1개의 capacitor로 구성된 단순한 구조와 고집적화에 용이하다는 이점을 바탕으로, supercomputer에서 가전제품 및 산업기기에 이르기 까지 널리 이용되어왔다. 한편으로 DRAM사업은 고가의 장치사업으로 조기시장 진입을 위하여 초기에 막대한 자본투자, 급속한 기술발전, 짧은 life cycle, 가격급락등이 심하여, 시한내 투자회수가 이루어져야 하는 위험도가 큰 기회사업이라는 양면성도 가지고 있다. 이러한 관점때문에 새로운 DRAM기술은 매 세대마다 끊임없이 빠른 속도로 개발되어왔다. 그러나 sub-micron이하의 DRAM세대로 갈수록 그에 대한 신기술은 점차 어렵게 되어가고, 한편으로는 system의 다양화에 따른 요구도 강하여, 이제는 통상적인 DRAM의 고집적화/저가의 전략만으로는 생존하기 어려운 실정이므로 개발전략도 수정하여야만 할 것이다. 이러한 어려운 기술한계를 극복하기 위하여 새로운 소자기술 및 공정개발에 대한 breakthrough가 이루어져야 할 것이다. 이러한 관점에서 현재까지의 DRAM개발 추이와 향후의 기술방향에 관하여 몇가지 중요한 item을 설정하여 논의해 보기로 한다.

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단상유도전동기의 입력단 직렬 인덕터를 이용한 전류검출 (The Current Detect of Single Phase Induction Motor Using Series Inductor)

  • 서강성;박수강;박제웅;김대곤;조금배;백형래
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2002년도 전력전자학술대회 논문집
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    • pp.205-208
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    • 2002
  • The single phase induction motor(SPIM) with two windings, main and auxiliary winding, is widely used due to ruggedness, low maintenance and simplicity of construction. There are several ways of starting single phase induction motor. The most common method is to use centrifugal switch that is connected in series with a capacitor. But the centrifugal switch that is the external starting system has many problems. In this paper, we use triac to overcome defects that happen by centrifugal switch, Also we used inductor that connected with main winding to get a gate trigger voltage signal. Experiments are focused on a capacitor starling single phase induction motor.

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