• Title/Summary/Keyword: Low THD

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An Efficient and High-gain Inverter Based on The 3S Inverter Employs Model Predictive Control for PV Applications

  • Abdel-Rahim, Omar;Funato, Hirohito;Junnosuke, Haruna
    • Journal of Electrical Engineering and Technology
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    • v.12 no.4
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    • pp.1484-1494
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    • 2017
  • We present a two-stage inverter with high step-up conversion ratio engaging modified finite-set Model Predictive Control (MPC) for utility-integrated photovoltaic (PV) applications. The anticipated arrangement is fit for low power PV uses, the calculated efficiency at 150 W input power and 19 times boosting ratio was around 94%. The suggested high-gain dc-dc converter based on Cockcroft-Walton multiplier constitutes the first-stage of the offered structure, due to its high step-up ability. It can boost the input voltage up to 20 times. The 3S current-source inverter constitutes the second-stage. The 3S current-source inverter hires three semiconductor switches, in which one is functioning at high-frequency and the others are operating at fundamental-frequency. The high-switching pulses are varied in the procedure of unidirectional sine-wave to engender a current coordinated with the utility-voltage. The unidirectional current is shaped into alternating current by the synchronized push-pull configuration. The MPC process are intended to control the scheme and achieve the subsequent tasks, take out the Maximum Power (MP) from the PV, step-up the PV voltage, and introduces low current with low Total Harmonic Distortion (THD) and with unity power factor with the grid voltage.

Design of Low Voltage Linear Tunable Transconductors using the Series Composite Transistor (직렬 복합 트랜지스터를 이용한 저전압 가변 트랜스컨덕터의 설계)

  • Yun, Chang-Hun;Yu, Young-Gyu;Choi, Seok-Woo
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.38 no.5
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    • pp.52-58
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    • 2001
  • In this paper, the low voltage linear tunable transconductors using the series composite transistor are presented. Due to the series composite transistor operating in the saturation region and the triode region, the proposed circuits have wide input range at low supply voltage. The designed transconductors have been simulated by HSPICE using $0.25{\mu}m$ n-welll CMOS process. Simulation results show that the cutoff frequency is 309M Hz and the THD of less than 1.1% can be obtained for the differential input signal of up to l.5VP-P with the input signal frequency of l0MHz.

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LS-MOCVD OF BARIUM STRONTIUM TITANATE THIN FILMS USING NOVEL PRECURSORS

  • Kwon, Hyun-Goo;Oh, Young-Woo;Park, Jung-Woo;Lee, Young-Kuk;Kim, Chang-Gyoun;Kim, Do-Jin;Kim, Yunsoo
    • Proceedings of the Korea Crystallographic Association Conference
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    • 2002.11a
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    • pp.19-19
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    • 2002
  • Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

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Highly AC Voltage Fluctuation-Resistant LED Driver with Sinusoid-Like Reference

  • Ning, Ning;Tong, Zhenxiao;Yu, Dejun;Wu, Shuangyi;Chen, Wenbin;Feng, Chunyi
    • Journal of Power Electronics
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    • v.14 no.2
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    • pp.257-264
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    • 2014
  • A novel converter-free AC LED driver that is highly resistant to the fluctuation of AC voltage is proposed in this study. By removing large passive components, such as the bulky capacitor and the large-value inductor, the integration of the driver circuit is enhanced while the driving current remains stable. The proposed circuit provides LED lamps with a driving current that can follow the sinusoid waveform to obtain a very high power factor (PF) and low total harmonic distortion (THD). The LED input current produced by this driving current is insensitive to fluctuations in the AC voltage. Users will thus not feel that LED lamps are flashing during the fluctuation. Experiment results indicate that the proposed system can obtain PF of 0.999 and THD as low as 3.3% for a five-string 6 W LED load under 220 V at 50 Hz.

A Unity Power Factor Electronic Ballast for Fluorescent Lamp having Improved Valley Fill and Valley Boost Converter (개선된 밸리필과 밸리용 승압형 변환기를 결합한 고역률 형광등용 전자식 안정기)

  • Youn, Yong-Sik;Chae, Gyun;Cho, Gyun-Hyeong
    • Proceedings of the KIEE Conference
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    • 1997.07f
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    • pp.2002-2006
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    • 1997
  • A new PF correction topology, Improved Valley Fill (IVF) with Valley Boost Converter (VBC) used in the electronic ballast for fluorescent lamp is presented. The IVF can adjust the valley voltage higher than half the peak line voltage. Hence, there is no pulsating line current around the line voltage peak, PF and THD are significantly improved. The VBC is added to the IVF to achieve unity PF and to increase the valley voltage. The measured PF and THD for a prototype electronic ballast are 0.997 and 5%, respectively, and the lamp current CF is as low as 1.5

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Bridgeless Buck PFC Rectifier with Improved Power Factor

  • Malekanehrad, Mahdi;Adib, Ehsan
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.323-331
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    • 2018
  • Buck power factor correction (PFC) converters, compared with conventional boost PFC converters, exhibit high efficiency performance in the entire range of universal line voltage. This feature has gotten more attention for eliminating the zero crossing dead angle of buck PFC rectifiers. Furthermore, bridgeless structures for the reduction of conduction losses have been proposed. The aim of this paper is to introduce a single-phase buck rectifier that simultaneously has unity power factor (PF) and bridgeless structure while operating in the continuous conduction mode (CCM). For this purpose, two auxiliary flyback converters without any active switches are applied to a bridgeless buck rectifier to eliminate the zero crossing dead angle and achieve unity power factor, low total harmonic distortion (THD) and high efficiency. The operation and design considerations of the proposed rectifier are verified on a 150W, 48V prototype using a conventional peak-current-mode control. The measurement results show that the proposed rectifier has nearly unity power factor, THD less than 7% and high efficiency.

A Design of LC-tuned Sinusoidal VCOs Using OTA-C Active Inductors

  • Chung, Won-Sup;Son, Sang-Hee
    • Journal of IKEEE
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    • v.11 no.3
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    • pp.122-128
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    • 2007
  • Sinusoidal voltage-controlled oscillators (VCOs) based on Colpitts and Hartley oscillators are presented. They consist of a LC parallel-tuned circuit connected in a negative-feedback loop with an OTA-R amplifier and two diode limiters, where the inductor is simulated one realized with temperature-stable linear operational transconductance amplifiers (OTAs) and a grounded capacitor. Prototype VCOs are built with discrete components. The Colpitts VCO exhibits less than 1% nonlinearity in its current-to-frequency transfer characteristic from 4.2 to 21.7 MHz and ${\pm}$95 ppm/$^{\circ}C$ temperature drift of frequency over 0 to $70^{\circ}C$. The total harmonic distortion (THD) is as low as 2.92% with a peak-to-peak amplitude of 0.7 V for a frequency-tuning range of 10.8-32 MHz. The Hartley VCO has the temperature drift and THD of two times higher than those of the Colpitts VCO.

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A Study on the Multi-level PV-PCS Using Cascade 3-Phase Transformer (직렬형 3상 변압기를 이용한 다중레벨 PV-PCS)

  • Kim, Ki-Seon;Song, Sung-Geun;Cho, Su-Eog;Choi, Joon-Ho;Kim, Kwang-Heon;Park, Sung-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.12
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    • pp.2359-2369
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    • 2009
  • The study on the multi-level inverter has been increasingly progressing to reduce the switching loss and improve the THD of output current in photovoltaic inverter. Recently, the main topics of multi-level inverter are to reduce the number of devices maintaining the power quality. Therefore, the novel topology was proposed for these problem which is composed of the isolated H-bridge multi-level inverter using the three phase low frequency transformer. The proposed multi-level inverter may not be need for a independent DC power, diode and capacitor. Specially, It has a advantage in generating high voltage source. The proposed approach is verified through simulation and experiment.

Low Frequency Multi-Level Switching Strategy Based on Phase-Shift Control Methods

  • Lee, Sang-Hun;Song, Sung-Geon;Park, Sung-Jun
    • Journal of international Conference on Electrical Machines and Systems
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    • v.1 no.3
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    • pp.366-371
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    • 2012
  • In this paper, we propose an electric circuit using one common-arm of H-Bridge inverters to reduce the number of switching components in the multi-level inverter combined with H-Bridge inverters and transformers. And furthermore, we suggested a new multi-level PWM inverter using PWM level to reduce THD (Total Harmonic Distortion). We use a phase-shift switching method that has the same rate of usage at each transformer. Also, we test the proposed prototype 9-level inverter to clarify the proposed electric circuit and reasonableness of the control signal for the proposed multi-level PWM inverter.

Optimum Hybrid SVPWM Technique for Three-level Inverter on the Basis of Minimum RMS Flux Ripple

  • Nair, Meenu D.;Biswas, Jayanta;Vivek, G.;Barai, Mukti
    • Journal of Power Electronics
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    • v.19 no.2
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    • pp.413-430
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    • 2019
  • This paper presents an optimum hybrid SVPWM technique for three-level voltage source inverters (VSIs). The proposed hybrid SVPWM technique aims to minimize total harmonic distortion (THD). A new parameter is introduced to incorporate the heterogeneous nature of switching sequences of SVPWM technique. The proposed hybrid SVPWM technique is implemented on a low-cost PIC microcontroller (PIC18F452) and verified experimentally with a 2 KVA three-phase three-level insulated gate bipolar transistor-based VSI. Optimum switching sequence results in the three-level inverter configuration are demonstrated. The proposed hybrid SVPWM technique improves the THD performance by 17.3% compared with the best available three-level SVPWM technique.