• Korean Journal of Materials Research
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• v.8 no.7
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• pp.601-606
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• 1998

The $SrTi0_3$:Al, Pr red phosphors were prepared by solid state reaction method. Phosphor preparation parameters such as sintering temperature and time were optimized for the photoluminescence(PU intensity and the cathodoluminescence(CL) intensity. Powder samples showed the characteristic X-ray diffraction patterns of the perovskite structure and the average particle size of 3~5/$\mu\textrm{m}$ for particle size distribution(PSD) analysis. Also, scanning electron microscopy for the powder samples showed that the particles are reasonably crystallized with spherical shape. Especially, higher low voltage CL properties of $SrTi0_3$:Al, Pr phosphors than commercial $Y_2O_3$:Eu phosphors are expected to be applied for a low voltage field emission display(FED).

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.249-252
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• 2011

We investigated the low firing of $Li_2CO_3$ added $0.2Pb(Mg_{1/3}Nb_{2/3})O_3$ - 0.3Pb($Fe_{1/2}Nb_{1/2}$) - $0.5Pb(Zr_{0.475}Ti_{0.525})O_3$ (PMN-PFN-PZT) ceramics and multilayer actuators (MLAs) using Ag inner electrodes. It was found that 0.1 wt% $Li_2CO_3$ was quite effective in lowering the sintering temperature of PMN-PFN-PZT ceramics from $1,100^{\circ}C$ down to $900^{\circ}C$ without deteriorating their piezoelectric ceramics ($d_{33}$ = 425 pC/N and $k_p$ = 61.9%). However, excess $Li_2CO_3$ up to 0.3 wt% brings about unwanted problems such as the formation of a $LiPbO_2$ secondary phase and subsequent degradation in the piezoelectric properties. Using 0.1 wt% $Li_2CO_3$ added PMN-PFN-PZT ceramics, MLAs with Ag inner electrodes were successfully fabricated, resulting in a normalized strain of 580 pm/V at an electric field of 1.5 kV/mm.

• Journal of the Korean Magnetics Society
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• v.17 no.6
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• pp.232-237
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• 2007

We have synthesized the low temperature sintered of Ni-Zn-Cu ferrite with nonstoichiometric composition a little deficient in $Fe_2O_3$ from $(Ni_{0.2}Cu_{0.2}Zn_{0.6})_{1+x}(Fe_2O_3)_{1-x}$. For low loss and acceleration of grain growth $TiO_2$ and $Li_2CO_3$ was added from 0.25 mol% to 1.0 mol%. The mixture of the law materials was calcinated and milled. The compacts of toroidal type were sintered at different temperature $(875^{\circ}C,\;900^{\circ}C,\;925^{\circ}C\;950^{\circ}C)$ for 2 hours in air followed by an air cooling. Then, effects of composition and sintering temperatures on the physical properties such as density, resistivity, magnetic induction, coercive force, initial permeability, and quality factor of the Ni-Zn-Cu ferrite were investigated. The density of the Ni-Zn-Cu ferrite was $4.85\sim5.32g/cm^3$, resistivity revealed $10^8\sim10^{12}\Omega-cm$. The magnetic properties obtained from the aforementioned Ni-Zn-Cu ferrite specimens were 1,300 gauss for the maximum induction, 4.5 oersted for the coercive force, 275 for the initial permeability, and 83 for the quality factor. The physical properties indicated that the specimens could be utilized as the core of high frequency range (involved microwave range) communication and deflection yoke of T.V.

• Journal of Information Display
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• v.2 no.3
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• pp.39-43
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• 2001

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.108-115
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• 2009

In this study, a novel-processing route for producing microcellular zirconia ceramics has been developed. The proposed strategy for making the microcellular zirconia ceramics involves hollow microsphere as a pore former which has extremely low density of $0.025\;g/cm^3$. Effects of hollow microsphere content and sintering temperature on microstructure, porosity, pore distribution, and compressive strength were investigated in the processing of microcellular zirconia ceramics. By controlling the content of hollow microsphere, it was possible to make the porous zirconia ceramics with porosities ranging from 45% to 75%. Typical compressive strength value of microcellular zirconia ceramics with ${\sim}65%$ porosity was over 50 MPa. By adjusting the mixing ratio of large and small zirconia powders, it was possible to control the pore structure from close to open pores.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.355-363
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• 1998

The oxygen flux of SDC ($Sm_2O_3\;doped\;CeO_2$) solid electrolyte membranes with electronic and oxygen ion-ic conductivities has been investigated as a basic research in order to develop the conversion process of na-tural gas to syngas using the ceramic membrane reactor. Tube type membranes(1 mm thickness) were fa-bricated by slip casting of SDC powders prepared by the oxalate coprecipitaion method. Dense oxygen per-meation membranes(0.1 mm thickness) could be synthesized via sintering at $1450^{\circ}C$ for 2h and their re-lative density was over 95% The oxygen flux through SDC membranes doped 20mol% $Sm_15$ was about $1.13{\times}10^{-5}\;mol/m_2{\cdot}sec$ at low temperature around $800^{\circ}C$. In addition the SDC membranes showed a good thermaal stability for a long period of service.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.149-152
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• 2001

A great deal of attention has been focused on the application of miniaturized piezoelectric transformers to the low power source for the microsystem. The dielectric and piezoelectric properties of Pb(Mn,W,Sb,Nb)O$_3$-Pb(Zr,Ti)O$_3$ ceramics have been investigated on different calcination(750$^{\circ}C$∼950$^{\circ}C$) and sintering(1100$^{\circ}C$∼1300$^{\circ}C$) temperatures. The perovskitic phase was formed by the solid phase reaction of the oxides. Anisotropic (k$\sub$t/k$\sub$p/) properties of electromechanical coupling coefficient and piezoelectric coefficient have been proven to be depending on processing temperatures. The value of electromechanical coupling factor of K$\sub$p/>0.51 and a mechanical quality factor of Q$\sub$m/>2000 were obtained. The piezoelectric transformer was prepared using this ceramics with the composition of Pb(Mn,W,Sb,Nb)O$_3$-Pb(Zr,Ti)O$_3$ We studied the influence of different processing temperature on the microstructure and piezoelectric properties of complex PZT-based ceramics. and the characteristic of piezoelectric transformer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.396-399
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• 2004

저온 동시소성용 glass-ceramics의 소결 경향성 연구를 위해 lead-borosilicate계 glass를 frit화하여 알루미나분말과 $TiO_2$분말을 $10{\sim}50\;vol%$로 각각 혼합한 후 여러 온도에서 소결하여 소결과 유전 특성을 조사하였다. 그 결과 glass의 연화온도(Ts)가 낮을수록 최대 치밀화 온도가 낮았으며, 반면에 소결밀도는 Ts가 높을수록 높았는데, 이는 glass-ceramicss에서의 결정화도와 관계하였다. 본 연구를 통해 glass-ceramic에서의 소결특성은 glass와 ceramic의 반응성에 의한 2상 석출 정도에 큰 영향을 받음을 알 수 있었으며, ceramic filler로서 알루미나와 $TiO_2$를 이용하여 $900^{\circ}C$에서 소성이 가능하였다. 알루미나의 경우 유전특성$({\epsilon}r=8.5,\;Q{\times}fo=6000)$이 기판용 저유전율 재료로 사용이 가능하였고, $TiO_2$의 경우도 유전특성($({\epsilon}r=17,\;Q{\times}fo=4000)$)이 필터용 고유전율 재료로 사용 가능하도록 높게 나타났다.