• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.242-247
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• 1998

In this study, we have synthesized $ZnGa_2O_4$:Mn,X powder doped with Mn, MnO, $MnF_2$ and $MnCl_2$, low voltage green emitting phosphor, in vacuum atmosphere. From PL spectra, the intensity of the emission peak, the brightness with coactivator show that $ZnGa_2O_4$:Mn,Cl > $ZnGa_2O_4$:Mn,F > $ZnGa_2O_4$:Mn,O > $ZnGa_2O_4$:Mn. These improvement of the brightness are caused by the increase of the concentration of $Mn^{2+}$ ion. In case of $ZnGa_2O_4$:Mn,Cl and ZnGa$_2$O$_4$:Mn,F, the brightness is enhanced much more, which is owed to the decrease of defect of host material. For $ZnGa_2O_4$:Mn,Cl phosphor fabricated with optimized condition, the decay time becomes short from 30 ms of the $ZnGa_2O_4$:Mn and $ZnGa_2O_4$:Mn,O to 6 ms and the brightness of CL at 1 kV, 1 mA is 60 cd/$m^2$.

• 한국분말재료학회지
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• 제29권4호
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• pp.320-324
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• 2022

Lightweight steel is a crucial material that is being actively studied because of increased carbon emissions, tightening regulations regarding fuel efficiency, and the emergence of UAM, all of which have been recently labeled as global issues. Hence, new strategies concerning the thickness and size reduction of steel are required. In this study, we manufacture lightweight steel of the Fe-Mn-Al-C system, which has been recently studied using the DED process. By using 2.8 wt.% low-Mn lightweight steel, we attempt to solve the challenge of joining steel parts with a large amount of Mn. Among the various process variables, the laser scan power is set at 600 and 800 W, and the laser scan speed is fixed at 16.67 mm/s before the experiments. Several pores and cracks are observed under both conditions, and negligibly small pores of approximately 0.5 ㎛ are observed.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.12-15
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• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• 한국재료학회지
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• 제13권2호
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• pp.120-125
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• 2003

A low melting borosilicate glass frit was used as an adhesion promoter, which enables $MnWO_4$to be sintered with in a reasonable sintering temperature range ($800∼1000^{\circ}C$). The glass was evaluated for glass transition temperature ($Τ_{g}$ X) and thermal expansion coefficient($\alpha$). Mechanical property (Vickers hardness), grain growth, the comparison of lattice parameter and pore distribution of sintered $MnWO_4$ with the frit were methodically discussed. As sintering temperature increased, a typical liquid phase sintering showed the rapid grain growth and high densification of X$MnWO_4$grain, improvement of hardness (until $920^{\circ}C$) and different pore size distribution. Resistance of sintered $MnWO_4$varied from 450k$\Omega$ to 8.8M$\Omega$ under the measuring humidify ranging from 30 to 90%. Thus, the results will contribute to the application of glass frit containing sensor materials and their future use.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• 대한금속재료학회지
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• 제48권2호
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• pp.122-132
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• 2010

Higher strength and fracture toughness of reactor pressure vessel steels can be obtained by changing the material specification from that of Mn-Mo-Ni low alloy steel (SA508 Gr.3) to Ni-Mo-Cr low alloy steel (SA508 Gr.4N). However, the operation temperature of the reactor pressure vessel is more than $300^{\circ}C$ and the reactor operates for over 40 years. Therefore, we need to have phase stability in the high temperature range in order to apply the SA508 Gr.4N low alloy steel for a reactor pressure vessel. It is very important to evaluate the temper embrittlement phenomena of SA508 Gr.4N for an RPV application. In this study, we have performed a Charpy impact test and tensile test of SA508 Gr.4N low alloy steel with changing impurity element contents such as Mn and P. And also, the mechanical properties of these low alloy steels after longterm heat treatment ($450^{\circ}C$, 2000hr) are evaluated. Further, evaluation of the temper embrittlement by fracture analysis was carried out. Temper embrittlement occurs in KL4-Ref and KL4-P, which show a decrease of the elongation and a shifting of the transition curve toward high temperature. The reason for the temper embrittlement is the grain boundary segregation of the impurity element P and the alloying element Ni. However, KL4-Ref shows temper embrittlement phenomena despite the same contents of P and Ni compared with SC-KL4. This result may be caused by the Mn contents. In addition, the behavior of embrittlement is not largely affected by the formation of $M_3P$ phosphide or the coarsening of Cr carbides.

• 자원리싸이클링
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• 제9권5호
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• pp.38-42
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• 2000

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1999년도 특별강연 및 추계학술발표대회 개요집
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• pp.177-177
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• 1999

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1995년도 춘계연구발표회 논문개요집
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• pp.76-77
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• 1995

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.34-34
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• 1994