• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.113-118
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• 2019

In this study, we investigated the growth of single-crystallinity α-Ga₂O₃ thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga₂O₃. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga₂O₃ thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 10⁴ cm^-2.

• Journal of the Korean Geotechnical Society
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• v.18 no.5
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• pp.229-236
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• 2002

In this study, the characteristics of chemical grouting, such as solidification, penetrability, were analyzed experimentally by grain size of grout materials and permeability, relative density of the ground. For evaluating applicability of grout material, solidification tests and permeability tests were peformed. From the results of the tests, effective solidification ratio and penetrability ratio of Micro Cement were 75% and 86% respectively when ground permeability was in the range of 10$^{-4}$ to 10$^{-2}$cm/sec. On the other hand, effective solidification ratio and penetrability ratio of Ordinary Portland Cement (OPC) were both lower than 50%. When penetrability of grout material is needed for improvement of dam foundation and soft ground, application of Micro Cement is much superior to that of the other materials. The results of the grouting tests in the hydrodynamic ground show that the solidification effect of long gel-time grout material is excellent as injection pressure increases when groundwater velocity is relatively low. But when groundwater velocity is relatively high, the solidifcation effect of long gel-time grout material is very poor because most grout materials are outflowed.

• Journal of the Korean Ceramic Society
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• v.50 no.4
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• pp.263-268
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• 2013

Porous biphasic calcium phosphate scaffolds were fabricated by a freeze-gel casting technique using a tertiary-butyl alcohol (TBA)-based slurry. After sintering, unidirectional macropore channels of scaffolds aligned regularly along the TBA ice growth direction were tailored simultaneously with micropores formed in the outer wall of the pore channels. The crystallinity, micro structure, pore configuration, bulk density, and compressive strength for the scaffolds were investigated with X-ray diffractometery, scanning electron microscopy analysis, a water immersion method, and a universal test machine. The results revealed that the sintered porosity and pore size generally resulted in a high solid loading which resulted in low porosity and small pore size, which relatively increased the higher compressive strength. After being sintered at $1100-1300^{\circ}C$, the scaffolds showed an average porosity and compressive strength in the range 35.1-74.9% and 65.1-3.0 MPa, respectively, according to the processing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1438-1439
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• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.

• Textile Coloration and Finishing
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• v.25 no.3
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• pp.172-180
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• 2013

Aramid fibers are being used increasingly in a wide range of application due to low density, high specific strength, high modulus, and high thermal resistance. But owing to its special physical and chemical structures, it is sensitive to absorb the ultraviolet light which will degrade the fiber's useful mechanical properties and structure. In this paper, the sol-gel technique was used to improve the photo-stability of p-aramid fibers. $TiO_2$, modified $SiO_2$/$TiO_2$ sol were used as coating solutions. The influence of the such coatings on the photo-stability of p-aramid fiber was investigated by an accelerated photo-ageing method using xenon lamp. The photo-stability of p-aramid fiber showed obvious improvement after the modified silica binding coating. But the amorphous $TiO_2$ sol coatings showed a negative effect. After 144h light exposure, the modified silane binder-coated fibers showed less degradation in mechanical properties with the retained tensile strength greater than about 70% of the original value.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.6
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• pp.78-84
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• 2009

This paper presents measurement results of transient impedance for small-sized ground electrodes in a discharge region of soil. For a realistic analysis of ionization characteristics near the ground electrode, three types of ground rod installed outdoors and high voltage impulse generator were used for injecting test current. From the analysis of response voltage and current flowing ground electrode to earth, it is verified that the ionization near the ground electrode contributes to reduction of ground impedance and limits the ground potential rise effectively in high resistivity soil. As a threshold electric field density for ionization is small in low resistivity soil, the shape of ground electrode rarely contributes to the transient impedance. And, from the experiment result with shape of ground electrode, the rod with needles is more effective to reduce the transient impedance than the plate electrode in the voltage range including with ionization regions of soil.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.167-168
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• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• Polymer(Korea)
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• v.28 no.3
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• pp.218-224
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• 2004

The adhesion and proliferation of mammalian cells on polymeric biomaterials depend on the surface characteristics such as wettability, chemistry, charge and roughness. In order to recognize the correlation between the adhesion and proliferation of human bone marrow derived stem cells (BMSCs) and surface property, radio frequency generated plasma treatment on low density polyethylene (LDPE) has been carried out. The modified LDPE surfaces were characterized by measuring the static water contact angle. The adhesion and proliferation of cells on LDPE films were characterized by cell counting and reverse transcription-polymerase chain reaction (RT-PCR). The water contact angle of the film surface decreased with plasma treatment time. Proto-oncogenes (c-myc, c-fos) and tumor suppressor gene (p153) showed maximum expression with contact angle of 60 ∼ 70$^{\circ}$ range of LDPE film. By cell counting, we confirmed that the rate of cell proliferation appeared the higher on the film surface of the contact angle of 60∼70$^{\circ}$ We concluded that the surface wettability is an important role for the growth and differentiation of BMSCs.

• Journal of the Korean Geotechnical Society
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• v.36 no.9
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• pp.45-55
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• 2020

X-ray computed tomography (CT) is very useful for the quantitative evaluation of internal structures, particularly defects in rock samples, such as pores and fractures. In situ CT allows 3D imaging of a sample subjected to various external treatments such as loading and therefore enables observation of changes that occur during the loading process. We reviewed state-of-the-art of in situ CT applications for geomaterials. Two triaxial cells made using relatively low density but high strength materials were developed aimed at in situ CT scanning during hydro-mechanical laboratory testing of rocks. Preliminary results for in situ CT imaging of granite and sandstone samples with diameters ranging from 25 mm to 50 mm show a resolution range of 34~105 ㎛ per pixel pitch, indicating the feasibility of in situ CT observations for internal structural changes in rocks at the micrometer scale. Potassium iodide solution was found to improve the image contrast, and can be used as an injection fluid for hydro-mechanical testing combined with in situ CT scanning.