• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.5
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• pp.93-97
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• 2022

Infrared scenes usually contain also spectral information which cannot be resolved using normal single-band infrared cameras. Multispectral infrared imaging cameras give access to the comprehensive information contained within infrared scenes. A Dual-band infrared Camera, a type of multispectral infrared imaging cameras, has the advantage of simple system. A Dual-band Infrared Camera gives access to the spectral information as wells as the temperature information within infrared scenes. Multispectral imaging generally increases the detection and identification performance of a Dual-band Infrared Camera. This paper describes a design of an infrared Camera using a Dual-band Infrared Detector to simultaneously receive infrared radiation from the medium-wave infrared/long-wave infrared(MWIR/LWIR) bands.

• Journal of the Korean Society for Precision Engineering
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• v.12 no.7
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• pp.46-52
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• 1995

This paper proposes methodologies for the development of radiation thermometer using InSb photo-detector of which spectral sensitivity is excellent over the wave length range of 2 .mu. m .approx. 5 .mu. m. The proposed radiation thermometer has broad measurement range from normal to high, up to more than 1000 .deg. C, with high accuracy, and can measure temperature on the material surface or heat emission noncontactely with high speed. Optical system was consisted of two convex lens with foruslength of 15.2mm for infrared lay focusing, Ge filter to cut the short wave length components and sapphire filter to cut the long wave length components. The cold shielded was installed in the whole surface of the light-absorbing element to remove the error- mometer, calibration using black body furnace which has temperature range of 90 .deg. C .approx. 1100 .deg. C was carried out, and temperature calaibration curve was obtained by exponential function curvefitting. The result shows maximum error less than 0.24%(640K .+-. 1.6K) over the measurement range of 90 .deg. C .approx. 700 .deg. C, and from this result the usefulness of the developed thermometer has been confirmed.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10b
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• pp.1956-1960
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• 1991

This paper describes the measured results upon monochromatic light, compound light, and light emanated from light emitting diodes by a simplified wavemeter with a semiconductor color sensor. Since a single unit element of a semiconductor color sensor with two PN junction photodiodes has been developed, the author has fabricated the simplified wave detector by using the element. The simplified wive detector has been measured results upon monochromatic light, compound light, and light emanated from light emitting diodes. Since luminescent color of each diode locates in luminosity region, comparison of measured values of PD-150 and PD-151 resulted no remarkable difference in averaged wave length. As for monochromatic light, PD-151 showed very cross value to the color filter peak value rather than PD-150. As for compound light, PD-150 has shown such influence of long wave length light which reaches to near infrared ray with respect to PD-151.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.327-334
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• 2013

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.