• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.5B
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• pp.469-479
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• 2009

The GEM frame is used a mean to deliver the variable length user data and consists of the header and the payload in the G-PON system. The HEC field of header protects contents of the header and is used to maintain GEM frame synchronization at the same time. When an LCDG (Loss of GEM Channel Delineation) occurs while receiving frames, the receiver have to discard corrupted frames until acquiring the synchronization again. Accordingly, high-speed synchronization method is required to minimize the frame loss. In this paper, we suggest not only a main state machine but a sub-state machine to reduce the frame loss when undetectable errors occurred in the GEM header. Also, we provide a more efficient and fast parallel structure to detect the starting point of the header. Finally, the proposed method is implemented with the FPGA and verified by the logic analyzer.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.4
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• pp.712-720
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• 1994

In digital mobile communication systems, the convolutional coding is considered as the optimum error correcting scheme. Recently, the Viterbi algorithm is widely used for the decoding of convolutional code. Most Viterbi decoder has been proposed in conde rate R=1/2 or 2/3 with memory components (m) less than 3. which degrades the error correcting capability because of small code constraints (K). We consider the design method for typical code rate R=1/2, K=7(171,133) convolutional code with memory components, m=6. In this paper, a novel construction method is presented which combines maximum likelihood decoding with a state transition double detection and comparison method. And the designed circuit has the error-correcting capability of random 2 bit error. As the results of logic simulation, it is shown that the proposed Viterbi decoder exactly corrects 1 bit and 2 bit error signal.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Journal of KIISE:Computer Systems and Theory
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• v.26 no.10
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• pp.1275-1283
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• 1999

본 논문은 CMOS 디지털 회로에서의 전력 소모의 주원인인 신호의 천이중에서 회로의 동작에 직접적인 영향을 미치지 않는 불필요한 신호의 천이인 글리치를 줄이기 위한 효율적인 알고리즘을 제시한다. 제안된 알고리즘은 회로의 지연 증가 없이 게이트 사이징과 버퍼 삽입에 의해 경로 균등(path balancing)을 이룸으로써 글리치를 감소시킨다. 경로 균등화를 위하여 먼저 게이트 사이징을 통해 글리치의 감소와 동시에, 게이트 크기의 최적화를 통해 회로 전체의 캐패시턴스까지 줄일 수 있으며, 게이트 사이징 만으로 경로 균등화가 이루어지지 않을 경우 버퍼 삽입으로 경로 균등화를 이루게 된다. 버퍼 자체에 의한 전력 소모 증가보다 글리치 감소에 의한 전력 감소가 큰 버퍼를 선택하여 삽입한다. 이때 버퍼 삽입에 의한 전력 감소는 다른 버퍼의 삽입 상태에 따라 크게 달라질 수 있어 ILP (Integer Linear Program)를 이용하여 적은 버퍼 삽입으로 전력 감소를 최대화 할 수 있는 저전력 설계 시스템을 구현하였다. 제안된 알고리즘은 LGSynth91 벤치마크 회로에 대한 테스트 결과 회로의 지연 증가 없이 평균적으로 30.4%의 전력 감소를 얻을 수 있었다.Abstract This paper presents an efficient algorithm for reducing glitches caused by spurious transitions in CMOS logic circuits. The proposed algorithm reduces glitches by achieving path balancing through gate sizing and buffer insertion. The gate sizing technique reduces not only glitches but also effective capacitance in the circuit. In the proposed algorithm, the buffers are inserted between the gates where power reduction achieved by glitch reduction is larger than the additional power consumed by the inserted buffers. To determine the location of buffer insertion, ILP (Integer Linear Program) has been employed in the proposed system. The proposed algorithm has been tested on LGSynth91 benchmark circuits. Experimental results show an average of 30.4% power reduction.

• Korean Journal of Agricultural Science
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• v.48 no.4
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• pp.703-718
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• 2021

An irrigation monitoring system is an efficient approach to save water and to provide effective irrigation scheduling for rice cultivation in desert soils. This research aimed to design, fabricate, and evaluate the basic performance of an irrigation monitoring system based on information and communication technology (ICT) for rice cultivation under drip and micro-sprinkler irrigation in desert soils using a Raspberry Pi. A data acquisition system was installed and tested inside a rice cultivating net house at the United Arab Emirates University, Al-Foah, Al-Ain. The Raspberry Pi operating system was used to control the irrigation and to monitor the soil water content, ambient temperature, humidity, and light intensity inside the net house. Soil water content sensors were placed in the desert soil at depths of 10, 20, 30, 40, and 50 cm. A sensor-based automatic irrigation logic circuit was used to control the actuators and to manage the crop irrigation operations depending on the soil water content requirements. A developed webserver was used to store the sensor data and update the actuator status by communicating via the Pi-embedded Wi-Fi network. The maximum and minimum average soil water contents, ambient temperatures, humidity levels, and light intensity values were monitored as 33.91 ± 2 to 26.95 ± 1%, 45 ± 3 to 24 ± 3℃, 58 ± 2 to 50 ± 4%, and 7160-90 lx, respectively, during the experimental period. The ICT-based monitoring system ensured precise irrigation scheduling and better performance to provide an adequate water supply and information about the ambient environment.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1022-1027
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• 2003

The Motion controllers provide the sophisticated performance and enhanced capabilities we can see in the movements of robotic systems. Several types of motion controllers are available, some based on the kind of overall control system in use. PLC (Programmable Logic Controller)-based motion controllers still predominate. The many peoples use MCU (Micro Controller Unit)-based board level motion controllers and will continue to in the near-term future. These motion controllers control a variety motor system like robotic systems. Generally, They consist of large and complex circuits. PLC-based motion controller consists of high performance PLC, development tool, and application specific software. It can be cause to generate several problems that are large size and space, much cabling, and additional high coasts. MCU-based motion controller consists of memories like ROM and RAM, I/O interface ports, and decoder in order to operate MCU. Additionally, it needs DPRAM to communicate with host PC, counter to get position information of motor by using encoder signal, additional circuits to control servo, and application specific software to generate a various velocity profiles. It can be causes to generate several problems that are overall system complexity, large size and space, much cabling, large power consumption and additional high costs. Also, it needs much times to calculate velocity profile because of generating by software method and don't generate various velocity profiles like arbitrary velocity profile. Therefore, It is hard to generate expected various velocity profiles. And further, to embed real-time OS (Operating System) is considered for more reliable motion control. In this paper, the structure of chip-based precision motion controller is proposed to solve above-mentioned problems of control systems. This proposed motion controller is designed with a FPGA (Field Programmable Gate Arrays) by using the VHDL (Very high speed integrated circuit Hardware Description Language) and Handel-C that is program language for deign hardware. This motion controller consists of Velocity Profile Generator (VPG) part to generate expected various velocity profiles, PCI Interface part to communicate with host PC, Feedback Counter part to get position information by using encoder signal, Clock Generator to generate expected various clock signal, Controller part to control position of motor with generated velocity profile and position information, and Data Converter part to convert and transmit compatible data to D/A converter.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.11
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• pp.51-62
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• 2003

This paper presents a novel survivor memeory management and decoding techniques with sequential backward state transition control in the trace back Viterbi decoder. The Viterbi algorithm is an maximum likelihood decoding scheme to estimate the likelihood of encoder state for channel error detection and correction. This scheme is applied to a broad range of digital communication such as intersymbol interference removing and channel equalization. In order to achieve the area-efficiency VLSI chip design with high throughput in the Viterbi decoder in which recursive operation is implied, more research is required to obtain a simple systematic parallel ACS architecture and surviver memory management. As a method of solution to the problem, this paper addresses a progressive decoding algorithm with sequential backward state transition control in the trace back Viterbi decoder. Compared to the conventional trace back decoding techniques, the required total memory can be greatly reduced in the proposed method. Furthermore, the proposed method can be implemented with a simple pipelined structure with systolic array type architecture. The implementation of the peripheral logic circuit for the control of memory access is not required, and memory access bandwidth can be reduced Therefore, the proposed method has characteristics of high area-efficiency and low power consumption with high throughput. Finally, the examples of decoding results for the received data with channel noise and application result are provided to evaluate the efficiency of the proposed method.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.17-26
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• 2016

This work proposes a 12b 60MS/s 0.18um CMOS Flash-SAR ADC for various systems such as wireless communications and portable video processing systems. The proposed Flash-SAR ADC alleviates the weakness of a conventional SAR ADC that the operation speed proportionally increases with a resolution by deciding upper 4bits first with a high-speed flash ADC before deciding lower 9bits with a low-power SAR ADC. The proposed ADC removes a sampling-time mismatch by using the C-R DAC in the SAR ADC as the combined sampling network instead of a T/H circuit which restricts a high speed operation. An interpolation technique implemented in the flash ADC halves the required number of pre-amplifiers, while a switched-bias power reduction scheme minimizes the power consumption of the flash ADC during the SAR operation. The TSPC based D-flip flop in the SAR logic for high-speed operation reduces the propagation delay by 55% and the required number of transistors by half compared to the conventional static D-flip flop. The prototype ADC in a 0.18um CMOS demonstrates a measured DNL and INL within 1.33LSB and 1.90LSB, with a maximum SNDR and SFDR of 58.27dB and 69.29dB at 60MS/s, respectively. The ADC occupies an active die area of $0.54mm^2$ and consumes 5.4mW at a 1.8V supply.

• The Transactions of the Korea Information Processing Society
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• v.3 no.4
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• pp.947-960
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• 1996

The primary goal for developing high performance ATM switching systems is to minimized the probability of cell loss, cell delay and deterioration of throughput. ATM switching element that is the most suitable for this purpose is the shared buffer memory switch executed by common random access memory and control logic. Since it is difficult to manufacture VLIS(Very Large Scale Integrated circuit) as the number of input ports increased, the used of switching module method the realizes 32$\times$32, 150 Mb/s switch utilizing 8$\times$8, 600Mb/s os 16$\times$16, 150Mb/s unit switch is latest ATM switching technology for small and large scale. In this paper, buffer capacity satisfying total-memory-reduction effect by buffer sharing in a shared buffer memory switch are analytically evalu ated and simulated by computer with cell loss level at traffic conditions, and also features of switching network utilizing the switching module methods in small and large-capacity ATM switching system is analized. Based on this results, the structure in outline of 32$\times$32(4.9Gb/s throughput), 150Mb/s switches under research in many countries is proposed, and eventually, switching-network structure for ATM switching system of small and large and capacity satisfying with above primary goals is suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.