• 한국전자통신학회논문지
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• 제11권2호
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• pp.179-184
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• 2016

본 연구를 통해 개발된 전기부하시험장치는 상용전원이 필요한 피시험장치(변압기, 정류기, 전압조정기, 인버터 등)와 상용전원이 불필요한 독립형 피시험장치(동력발전기, 풍력발전장치, 태양광발전장치, 하이브리드발전 장치, 배터리 등)에 대하여 정격용량시험이나 가변부하시험을 능동적으로 정밀하게 제어하면서도 시험 중에 사용되는 전기에너지를 소비하지 않고 전원변환장치를 통하여 계통선으로 전달하도록 설계되었다. 동기식 pwm 인버터회로를 상용전원과 연결시켜서 시험에 사용되는 전력을 계통선으로 귀환되도록 설계되었으며, 종전의 수동식 전기저항체를 사용한 전기부하시험장치에 비해 93.4% 정도의 전력을 소모하지 않고도 피시험체에 대한 시험이 가능하도록 하였다.

• 대한전기학회논문지:시스템및제어부문D
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• 제55권10호
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• pp.435-442
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• 2006

One of the most important topics about the safety of electrical and electronic system is the reliability of the wiring system. The Time-Frequency Domain Reflectometry(TFDR) is a state-of-the-art system for detecting and estimating of the fault on a wiring. In this paper, We've considered the load resistance measurement on a coaxial cable using TFDR in a way of expanded application. The TFDR system was built using commercial Pci extensions for Instrumentation(PXI) and LabVIEW. The proposed real time TFDR system consisted of the reference signal design, signal generation, signal acquisition, algorithm execution and results display part. To implement real time system, all of the parts were programmed by the LabVIEW which is one of the graphical programming languages. Using the application software implemented by the LabVIEW, we were able to design a proper reference signal which is suitable for target cable and control not only the arbitrary waveform generator in the signal generation part but alto the digital storage oscilloscope in the signal acquisition part. By using the TFDR real time system with the terminal resistor on the target cable, we carried out load impedance measurement experiments. The experimental results showed that the proposed system are able not only to detect the location of impedance discontinuity on the cable but also to estimate the load resistance with high accuracy.

• Transactions on Electrical and Electronic Materials
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• 제17권3호
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• pp.172-177
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• 2016

Miller feedback compensation is introduced in a low dropout regulator (LDO) in order to obtain a capacitor-free regulator and improve the fast transient response. The conventional LDO has a limited bandwidth because of the large-size output capacitor and parasitic gate capacitance in the power MOSFET. In order to obtain a stable frequency response without the output capacitor, LDO is designed with resistor-capacitor (R-C) compensation and this is achieved with a connection between the gain-stage and the power MOS. An R-C compensator is suggested to provide a pole and zero to improve the stability. The proposed LDO is designed with the 0.35 μm CMOS process. Simulation testing shows that the phase margin in the Bode plot indicates a stable response, which is over 100^o. In the load regulation, the transient time is within 55 μs when the load current changes from 0.1 to 1 mA.

• Journal of Advanced Marine Engineering and Technology
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• 제13권1호
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• pp.57-68
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• 1989

This paper treats the analytical and experimental studies on the improvement of commutating circuit for the speed control of DC motor. A simple circuit composed of R, L and C elements is proposed here for switching off power SCR carrying the load current. The real important in this chopper circuit is to determine the reasonable values of commutating circuit constants. In this paper, the reasonable values of the commutating circuit constants are basically determined on a view point of commutating performances in the given circuit model and must satisfy the following conditions. The first, the peak commutating current should be larger than the anticipated maximum load current. The second, the circuit turn-off time (tc) must be longer than the SCR turn-off time (tq). The third, the resistor should be enough large to permit the current to be neglected in the analysis of the commutation circuit, as well as be enough small to permit to charge the capacity voltage (Ec) to the half the value of source voltage (E) before the next communication cycle is initiated. The last, the period of chopping signal must be the least possible multiple of the damping vibration period of commutating circuit. The improved chopper circuit used in the experiment under unloaded condition was composed to meet the reasonable conditions mentioned above, and a successful commuting performance was achieved without failure. Several types of microprocessor having a different value of CPU speed individually have been applied to the experiment under the loaded conditions. Also it shows that the faster the speed of CPU is, the more stable the commutation turns out.

• Journal of Power Electronics
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• 제3권2호
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• pp.139-144
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• 2003

In this paper, 11 and 13 layered step-down piezoelectric transformers were fabricated and their electrical characteristics have been analyzed for AC-adapter. When the voltage is applied to the driving piezoelectric vibrator polarized in the longitudinal direction, the output voltage is generated at the generating piezoelectric vibrator polarized in the thickness direction due to the piezoelectric effects. From the piezoelectric direct and converse effects, symbolic expressions between the electric inputs and outputs of the step-down piezoelectric transformer are derived with an equivalent circuit model. With those expressions, load and frequency characteristics are discussed through the simulations. Output voltage and current from a 11-layered and a 13-layered piezoelectric transformers were measured under the different load and frequency conditions. First we measured resonant frequency from impedance curve and got equivalent impedance value of the piezoelectric transformer from admittance plot. It was shown from experiments that output voltage increase s and resonant frequency changes according to the various resistor loads. Output current decreases inversely proportional to the change of loads. Moreover, the measured output voltage and current are well matched with the simulated results obtained from the proposed equivalent circuit model. Furthermore, a new step-down piezoelectric transformer has been suggested to Increase the output power based on a simulation result having a driving piezoelectric vibrator polarized thickness direction.

• 대한전자공학회논문지SD
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• 제43권9호
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• pp.23-30
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• 2006

본 논문은 전류 감지 feedback 기법을 사용한 고효율 CMOS DC-DC boost 변환기의 설계에 관한 것이다. 펄스-폭 변조 방식의 스위칭 동작을 위해 인덕터를 통해 흐르는 전류의 양을 감지하는 고해상도 전류 감지 회로를 설계하였다. 이를 통하여 외부 소자나 큰 면적을 차지하는 주파수 보상 회로 없이 안정적으로 동작하는 변환기 성능을 얻을 수 있다. 또한 외부 저항 열을 사용하여 다양한 입력/출력 전압 특성을 얻을 수 있다. 설계한 DC-DC 변환기는 thick gate oxide 옵션이 포함된 0.18-um CMOS 표준 공정으로 제작하였다. 부하 전류 200mA 이상에 대하여 3.3V의 출력을 얻는 변환기에서 최대 효율은 90% 이상, load regulation은 100mA의 변화에 대하여 1.15%의 특성을 나타낸다.

• 전기학회논문지
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• 제62권7호
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• pp.943-949
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• 2013

Recently, an electric vehicle (EV) has been become a huge issue in the automotive industry. The EV has many electrical units: electric motors, batteries, converters, etc. The DC distribution power system (DPS) is essential for the EV. The DC DPS offers many advantages. However, multiple loads in the DC DPS may affect the severe instability on the DC bus voltage. Therefore, a voltage bus conditioner (VBC) may use the DC DPS. The VBC is used to mitigate the voltage transient on the bus. Thus, a suitable control technique should be selected for the VBC. In this research, Current controller with fixed switching frequency is designed and applied for the VBC. The DC DPS consist of both a resistor load and a boost converter load. The load variations cause the instability of the DC DPS. This instability is mitigated by the VBC. The simulation results by Matlab simulink and experimental results are presented for validating the proposed VBC and designed control technique.

• 산업기술연구
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• 제40권1호
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• pp.13-18
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• 2020

Lithium-ion batteries have a small volume, light weight and high energy density, maximizing the utilization of mobile devices. It is widely used for various purposes such as electric bicycles and scooters (e-Mobility), mass energy storage (ESS), and electric and hybrid vehicles. To date, lithium-ion batteries have grown to focus on increasing energy density and reducing production costs in line with the required capacity. However, the research and development level of lithium-ion batteries seems to have reached the limit in terms of energy density. In addition, the charging time is an important factor for using lithium-ion batteries. Therefore, it was urgent to develop a high-speed charger to shorten the charging time. In this thesis, a discharger was fabricated to evaluate the capacity and characteristics of Li-ion battery pack which can be used for e-mobility. To achieve this, a smart discharger is designed with a combination of active load, current sensor, and temperature sensor. To carry out this thesis, an active load switching using sensor control circuit, signal processing circuit, and FET was designed and manufactured as hardware with the characteristics of active discharger. And as software for controlling the hardware of the active discharger, a Raspberry Pi control device and a touch screen program were designed. The developed discharger is designed to change the 600W capacity battery in the form of active load.

• 전기전자학회논문지
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• 제1권1호
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• pp.11-18
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• 1997

회로 시뮬레이터를 이용하는 DC 셀 노드전압 분석방법을 적용하여, 고저항 SRAM 셀 구조에서 기생저항들과 트랜지스터 비대칭에 의해 야기되는 정적 읽기동작에서의 동작마진을 조사하였다. 이상적인 셀에 기생저항을 선택적으로 추가함으로써 각 기생저항들이 동작 마진에 끼치는 영향을 조사한 뒤, 기생저항이 좌우대칭 쌍으로 존재하는 경우에 대해 조사하고, 또한 셀 트랜지스터의 채널폭을 선택적으로 변화시켜 트랜지스터의 비대칭을 야기시킴으로써 트랜지스터 비대칭에 의한 동작 마진의 저하를 분석하였다. 분석 방법은 시뮬레이션된 셀 노드전압 특성에서 두 셀 노드전압이 하나의 값으로 수렴되는 전원전압의 값과 $V_{DD}=5V$에서 셀 노드전압의 차를 비교함으로써 상대적인 동작 마진을 비교하는 방법을 사용하였다. 회로 시뮬레이션에 의존한 본 분석으로부터 셀의 정적 읽기동작에 가장 심각한 영향을 끼치는 기생저항 성분과 트랜지스터의 비대칭 형태를 규명함으로써 새로운 셀 구조 설계시 참고할 수 있는 기준을 제시하였다.

• 대한전기학회논문지
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• 제41권9호
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• pp.1013-1020
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• 1992

The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.