• Title/Summary/Keyword: Lithography technology

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A Study on 3D File Format for Web-based Scientific Visualization

  • Lee, Geon-hee;Nam, Jeong-hwan;Han, Hwa-seop;Kwon, Soon-chul
    • International Journal of Advanced Culture Technology
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    • v.7 no.1
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    • pp.243-247
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    • 2019
  • The most commonly used 3D modeling file formats are OBJ (Wavefront file format specification) and STL (STereoLithography). Although they have a common point of view in 3D on the screen, detailed functions are different according to purpose of development. OBJ is the most commonly used 3D file format and STL is mainly used as 3D file format for 3D printing. However, in the field of Scientific Visualization, precise analysis is required. There is a difference in accuracy depending on the type of 3D file format. OBJ and STL are not suitable for delicate surface description because they form meshes in the form of triangular polygons. And if you increase the number of triangle polygons, it will be smoother, but the file size also increases exponentially and causes excessive CPU usage. In contrast, VTK provides a variety of polygon structures, including triangular polygons as well as rectangular polygons and cube polygons. Thus, delicate surface depiction is possible. Delicate surface rendering is possible and file size is not large. This paper describes the concept and structure of VTK. We also compared the load times and file sizes between VTK, STL, and OBJ in the Chrome browser. In addition, the difference in surface rendering ability between VTK, STL, and OBJ is intuitively viewed based on the screen in which each 3D file format is implemented under the same conditions. This study is expected to be helpful for efficient 3D file format for precise implementation of Web - based Scientific Visualization.

Tribological Characteristics of ABS-like Resin According to Silicon Oil Viscosity (실리콘 오일 점도에 따른 ABS-like 레진의 트라이볼로지 특성)

  • Park, Seonghyun;Son, Jungyu;Woo, Seongwoong;Ryu, Euijin;Lee, Hyunseop
    • Tribology and Lubricants
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    • v.36 no.6
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    • pp.365-370
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    • 2020
  • Recently, additive manufacturing (AM) technology has been applied to various industries such as automotive, aviation, medical, and electronics. Most prior studies are limited to the mechanical properties of printed materials, and few studies are being conducted on their tribological characteristics. However, the friction and wear characteristics of the material should be studied in order to utilize the components manufactured using AM technology as mechanical parts. In this study, the friction and wear characteristics of acrylonitrile-butadiene-styrene (ABS)-like resin printed with stereo lithography apparatus (SLA) 3D printing are evaluated according to the viscosity of silicon oil lubricant using a ball-on-disk experiment. Lubricants with a viscosity of 500, 1000, and 2000 cSt are prepared for the experiment. If silicon oil lubricants are used during the ball-on-disk test, the coefficient of friction (COF) and wear rates are significantly reduced, and the higher the viscosity of the lubricant, the lower will be the COF and wear rates. It is also verified that the temperature of the specimen owing to friction also decreases according to the viscosity of the lubricant. This is because of the silicon oil film thickness, and the higher the viscosity of the lubricant, the thicker will be the oil film. More studies on the tribological characteristics of 3D printing materials and suitable lubricants will be required to use 3D printed parts as mechanical elements.

Applications of Self-assembled Monolayer Technologies in MEMS Fabrication (MEMS 공정에서의 자기 조립 단분자층 기술 응용)

  • Woo-Jin Lee;Seung-Min Lee;Seung-Kyun Kang
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.2
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    • pp.13-20
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    • 2023
  • The process of microelectromechanical system (MEMS) fabrication involves surface treatment to impart functionality to the device. Such surface treatment method is the self-assembled monolayer (SAM) technique, which modifies and functionalizes the surface of MEMS components with organic molecule monolayer, possessing a precisely controllable strength that depends on immersion time and solution concentration. These monolayers spontaneously adsorb on polymeric substrates or metal/ceramic components offering high precision at the nanoscale and modifying surface properties. SAM technology has been utilized in various fields, such as tribological property control, mass-production lithography, and ultrasensitive organic/biomolecular sensor applications. This paper provides an overview of the development and application of SAM technology in various fields.

Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • Park, Min-Su;Kim, Ho-Seong;Yang, Hyeon-Deok;Song, Jin-Dong;Kim, Sang-Hyeok;Yun, Ye-Seul;Choe, Won-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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A Study on the Characteristics and Cleanliness of Fluidic Strip Process of Environment-Friendly Aqueous Stripper (친환경 수계 박리액의 유동박리 공정 특성 및 청정성 연구)

  • Lee, Ki-Seong;Lee, Jaeone;Kim, Young Sung
    • Clean Technology
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    • v.24 no.3
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    • pp.175-182
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    • 2018
  • In this research, we investigated the cleanliness by optimizing the water content of the aqueous stripper in fluidic strip process. The stripping properties of the photoresist with optimized aqueous stripper were compared with the commercial organic stripper. The stripping performance was evaluated by electrical and optical characteristics on the surface of the transparent electrode that compare with stripped the transparent electrode surface and the rare surface before patterning by the photoresist. As a result of the photoresist stripping process of the organic stripper and the aqueous stripper optimized for water content, the aqueous stripper exhibited better electrical and optical characteristics than the organic stripper. In the case of the fluidic strip process with organic stripper, the photoresist dissolves in the stripper solution during stripping which can cause re-adsorption by contamination. Whereas that the aqueous stripper under development seems to decrease the photoresist dissolution in the stripper solution. Because the cyclodextrin contained in the stripper captures organic photoresist into hall of cyclodextrin which stripped through swelling and tearing. The photoresist residue captured by the cyclodextrin can be filtered. After the fluidic stripping process by different chemical stripping mechanism, the cleanliness of the organic stripper and aqueous stripper was compared and analyzed.

Fabrication of Si Nano Dots by Using Diblock Copolymer Thin Film (블록 공중합체 박막을 이용한 실리콘 나노점의 형성)

  • Kang, Gil-Bum;Kim, Seong-Il;Kim, Young-Hwan;Park, Min-Chul;Kim, Yong-Tae;Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.17-21
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    • 2007
  • Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The nanopatterned holes were approximately $15{\sim}40nm$ wide, 40 nm deep and $40{\sim}80\;nm$ apart. To obtain nano-size patterns, self?assembling diblock copolymer were used to produce layer of hexagonaly ordered parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS. $100\;{\AA}-thick$ Au thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process. Arrays of Au nano dots were transferred by using Fluorine-based reactive ion etching(RE). Au nano dots were removed by sulfuric acid. Si nano dots size and height were $30{\sim}70\;nm$ and $10{\sim}20\;nm$ respectively.

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Studies on the Fabrication of 0.2 ${\mu}m$Wide-Head T-Gate PHEMT′s (0.2 ${\mu}m$ Wide-Head T-Gate PHEMT 제작에 관한 연구)

  • Jeon, Byeong-Cheol;Yun, Yong-Sun;Park, Hyeon-Chang;Park, Hyeong-Mu;Lee, Jin-Gu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.18-24
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    • 2002
  • n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

LED Beam Shaping and Fabrication of Optical Components for LED-Based Fingerprint Imager (LED 빔조형에 의한 초소형 이미징 장치의 제조 기술)

  • Joo, Jae-Young;Song, Sang-Bin;Park, Sun-Sub;Lee, Sun-Kyu
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.10
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    • pp.1189-1193
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    • 2012
  • The Miniaturized Fingerprint Imager (MFI) is a slim optical mouse that can be used as an input device for application to wireless portable personnel communication devices such as smartphones. In this study, we have fabricated key optical components of an MFI, including the illumination optical components and imaging lens. An LED beam-shaping lens consisting of an aspheric lens and a Fresnel facet was successfully machined using a diamond turning machine (DTM). A customized V-shaped groove for beam path banding was fabricated by the bulk micromachining of silicon that was coated with aluminum using the shadow effect in thermal evaporation. The imaging lens and arrayed multilevel Fresnel lenses were fabricated by electron beam lithography and FAB etching, respectively. The proposed optical components are extremely compact and have high optical efficiency; therefore, they are applicable to ultraslim optical systems.

Optimization of the growth of $CaF_2$ crystals by model experiments and numerical simulation

  • Molchanov, A.;Graebner, O.;Wehrhan, G.;Friedrich, J.;Mueller, G.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.1
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    • pp.15-18
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    • 2003
  • High purity single crystalline calcium fluoride ($CaF_2$) has excellent optical transmission characteristics down to deep UV and is therefore selected as the main optical material for the next generation of lithography apparatus operating at wavelength of 157 nm. The growth of large sized $CaF_2$ single crystals with the required properties for this optical application can be achieved only by optimizing the crystal growth process by the aid of numerical simulation. This needs especially a precise calculation of the heat transport and temperature distribution in the solid and liquid $CaF_2$ under crystal growth conditions. As $CaF_2$ is considered to be semitransparent, the internal radiative heat transfer in $CaF_2$ plays an decisive role in the simulation of the heat transport. On the other hand it is very difficult to obtain quantitative experimental data for evaluating numerical models as $CaF_2$ is extremely corrosive at high temperatures. In this work we present a newly developed experimental technique to perform temperature measurements in $CaF_2$-crystal as well as in the melt under conditions of crystal growth process. These experimental results are compared to calculated temperature data, which were obtained by using different numerical models concerning the internal heat transfer in semitransparent $CaF_2$. It will be shown, that an advanced model, which was developed by the authors, gives a much better agreement with experimental data as a standard model, which was taken from the literature.

The present status and future aspects of the market for printed electronics (인쇄전자 산업시장의 현황과 전망)

  • Park, Jung-Yong;Park, Jae-Sue
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.2
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    • pp.263-272
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    • 2013
  • Printed electronics creates electrically functional devices by printing on variety of substrates. Printing typically uses common printing equipment or other low-cost equipment suitable for defining patterns on material, such as screen printing, flexography, gravure, offset lithography and inkjet. Compared to conventional manufacturing of microelectronics, printed electronics is characterized by simpler and more cost-effective fabrication of high and low volume products. Now there is huge effort towards printing many other more functional components, from displays to transistors to photovoltaic cells, using the full range of printing technologies - from inkjet to roll to roll analogue print techniques. The market for printed electronics will rise from $1.99 billion in 2010 to $55.10 billion in 2020. In 2030, this industry could be $300 billion - larger than the silicon semiconductor industry - from lighting to displays[8].