• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.158.1-158.1
• /
• 2013

Microwave는 일반적으로 300 [MHz]~30 [GHz] 사이의 주파수를 가지는 전파로 1 [m] 이하의 파장을 가진다. Microwave를 이용한 플라즈마의 경우 낮은 이온 에너지, 효율적인 전자 가열, 넓은 동작압력 범위, 높은 밀도 등의 장점을 가지고 있어 PECVD(Plasma Enhanced Chemical Vapor Deposition)에 적합한 플라즈마 소스라고 할 수 있다. 또한 Microwave는 파장의 길이가 증착이 이루어지는 진공 챔버의 길이보다 매우 작기 때문에 대면적 적용성이 용이하므로 현재 많은 연구가 이루어지고 있다. 본 연구에서는 Fluid Simulation을 통해 Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 플라즈마 parameter를 계산하고, 자체 제작한 Linear microwave plasma 장치에서 정전 탐침(Langmuir Probe)을 이용하여 플라즈마 Parameter를 측정하였다. 또한 Simulation 결과와 실험결과를 비교 분석하였다.

• Applied Science and Convergence Technology
• /
• v.26 no.2
• /
• pp.34-41
• /
• 2017

A 2.45 GHz microwave plasma with linear antenna has been prepared for hydrophobic and wear-resistible surface coating of carbon steel. Wear-resistible properties are required for the surface protection of cutting tools and achieved by depositing a hydrogenated amorphous carbon film on steel surface through linear microwave plasma source that has $TE_{10}-TEM$ waveguide. Compared to the existing RF plasma source driven by 13.56 MHz, linear microwave plasma source can easily generate high density plasma and provide faster deposition rate and wider process windows. In this study, $Ar/CH_4$ gas mixtures are used for hydrogenated amorphous carbon film deposition. When microwave power of 1000 W is applied, 40 cm long uniform $Ar/CH_4$ plasma could be obtained in gas pressure of 200~400 mTorr. The Vickers hardness measurement of hydrogenated amorphous carbon film on steel surface was evaluated. It was found the optimized deposition condition at $Ar:CH_4=25:25$ sccm, 300 mTorr with microwave power of 1000W and RF bias power of 100W. By deposition of hydrogenated amorphous carbon film, contact angle on steel surfaces increases from $43.9^{\circ}$ to $93.2^{\circ}$.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.64 no.4
• /
• pp.567-572
• /
• 2015

Discharge characteristics of linear microwave plasma were investigated by using fluid simulation of 2D axis-symmetry based on finite elements method. The microwave power was 2.45 GHz TEM mode and transmitted through linear antenna. Resistive power and pressure were considered simulation variables and argon was used for working gas. A decrease of electron density along the quartz tube was observed in low power condition but relatively uniform plasmas were generated in chamber by increasing the resistive power. The electron temperature was highly detected near the surface of quartz tube because the electron was heated only dielectric surface. The power transmission efficiency decreased and characteristics of surface plasma were observed in high electron density condition.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.64 no.3
• /
• pp.422-428
• /
• 2015

A 2.45GHz microwave plasma source with a linear antenna has been developed for low temperature large scale deposition processing. Microwave power is transmitted through WR340 waveguide and a copper rod, linear antenna, is located in a quartz tube. The power matching is effectively achieved by a linear antenna is located at ${\lambda}_g/4$ or $3{\lambda}_g/4$ from the end of WR340 waveguide. The Ar plasma was generated along the surface of quartz tube and a clear standing wave pattern with nearly 10cm wavelength was observed at Ar pressure of 200mTorr and 200W input power. The electron density and electron temperature were investigated by using the electrostatic probe. The electron density and electron temperature were highly measured near the surface of quartz tube. Ar plasma density along the quartz tube is mostly uniform despite standing wave set-up and antenna of long length. A uniform temperature was measured at 10~40cm distance from the end quartz tube and 5cm distance from the surface of quartz tube.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.216-216
• /
• 2016

마이크로웨이브를 이용한 플라즈마 소스의 경우 동작 압력 범위가 넓고 전자가열이 효율적이며, 낮은 이온에너지를 갖는 고밀도의 플라즈마를 발생시킬 수 있는 장점이 있어 최근 많은 연구가 되고 있다. 그 중에서 본 연구에 이용된 선형 안테나를 사용하는 마이크로웨이브 플라즈마 장치는 구성이 간단하고, 직 병렬 결합을 통해 고효율, 고밀도의 플라즈마 생성이 가능한 장점이 있다. 본 연구에서는 선형 안테나를 사용하는 마이크로웨이브 플라즈마 소스의 구조에 따른 특성 변화를 2차원 유체 시뮬레이션을 통하여 검증하였다. Maxwell's equation, Continuity equation, Electromagnetic wave equation 등을 이용해 동축관의 유전율과 Gap size에 따른 특성 변화를 관찰하였다. 동축 형태의 도파관을 따라 전달되는 Wave의 파장을 조절하도록 구조를 변화시켜 플라즈마 특성의 변화를 관찰하고 분석하였다.

• Journal of Electrical Engineering and Technology
• /
• v.12 no.5
• /
• pp.2007-2013
• /
• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.2
• /
• pp.53-57
• /
• 2009

In this paper we develop a method to observe faults in semiconductor devices and transmission lines by calculating the variation of the reflection function in a dielectric microstrip line that has an open-ended termination containing an optically induced plasma region. It is analyzed with the assumption that the plasma is distributed homogeneously in laser illumination. With the non linear material of degradation, the concentration of the carrier in the part of the material has changed. Since the input wave has produced the phenomenon of reflection, the input signal to the open-ended microstrip lines can be observed on reflection to identify the location of the fault. The characteristic impedances resulting from the presence of plasma are evaluated by the transmission line model. The variation of the reflection wave in the microwave system has been calculated by using an equivalent circuit model. The transient response has been also evaluated theoretically for changing the phase of the variation in the reflection. The variation of characteristic response in differentially localized has been also evaluated analytically.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.3
• /
• pp.68-77
• /
• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.131.2-131.2
• /
• 2015

마이크로웨이브를 이용한 플라즈마는 효율적인 전자가열이 가능하며, 낮은 이온에너지를 가지는 고밀도 플라즈마를 생성시킬 수 있다는 장점이 있다. 최근 산화물 반도체 및 대화면 디스플레이 장치내 소자의 보호막 증착용으로 저온 PECVD (Plasma Enhanced Chemical Vapor Deposition) 공정 및 장치의 필요성에 따라 마이크로웨이브를 이용한 PECVD 장치가 주목 받고 있다. 본 연구에서는 실리콘 나이트라이드 공정 장치 개발을 위한 2차원 시뮬레이션 모델을 완성하였다. Global modeling을 이용하여 확보한 Chemical reaction data에 대한 검증을 하였다. Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 전자 밀도, 전자 온도등의 플라즈마 변수의 변화를 관찰하였다. 또한 Navier Stokes equation을 추가하여 챔버 내의 Gas flow의 흐름을 고려한 시뮬레이션을 진행하여 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.222.1-222.1
• /
• 2014

Flexible device 및 OLED 디스플레이 제조를 위한 산화물 반도체 보호막 증착 및 encapsulation 공정을 위해 균일한 대면적 플라즈마를 만들기 위한 다양한 연구가 진행되고 있다. 초고주파 플라즈마는 고밀도, 고효율의 플라즈마를 저진공에서 쉽게 생성시킬 수 있고 다양한 전력결합방법을 통해 대면적 확장성이 우수한 장점이 있다. 본 연구에서는 TEM 웨이브가이드로 파워가 전달되는 선형 초고주파 플라즈마 소스에 대한 2차원축대칭 유체 시뮬레이션을 수행하였다. Ar 가스 압력과 초고주파 입력전력이 증가함에 따라 전자밀도가 증가하였고 도파관 방향으로 플라즈마의 길이가 증가함이 관측되었다. Quartz Tube 표면 가까이에서 전자밀도가 가장 높게 나타났다. 전자의 에너지 손실 채널중 가장 많은 부분을 차지하는 것은 여기종 생성에 따른 에너지 손실이었으며 탄성 충돌에 의한 에너지 손실이 두 번째로 큰 부분을 차지하였다.