• Proceedings of the KIEE Conference
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• 2002.07a
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• pp.166-168
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• 2002

This paper presents a new numerical algorithm suitable for defining recloser reclaims time and blocking automatic reclosing during permanent faults on overhead lines. It is based on terminal voltage input data processing. The decision if it is safe or not to reclose is determined from the voltage signal of faulted and tripped line phase using Total Harmonic Distortion factor calculated by Discrete Fourier Transform. The algorithm was successfully tested using signals recorded on the real power system. The tests demonstrate the ability of presented algorithm to determine the secondary arc extinction time and to block unsuccessful automatic reclosing of HV lines with permanent fault.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.9-16
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• 1997

A 23GHz 1-stage LNA was designed by using new topology of coupled line type with EEsof softwares and modified by using MPIE numerical analysis. The parallel coupled filter-type matching sections give impedance matching and DC blocking simultaneously, and have small discontinuities. This matching scheme has simple structure in the design process and give small error. The EFT chip was directly attached to the ground metal. The designed LAN gives 6.2dB gain and 2.5dB noise figure without considering the loss of connectors. Through these results, it was verified that our design process, matching schemes and fabrication technologies was valied for developing 20GHz-band LNA.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.8-11
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• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.132-139
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• 1996

Experiments on the automatic control of NaOH concentration and on the spraying condition of NaOH solution in the alkaline degreasing process of a continuous hot-dip galvanizing line have been carried out in order to improve degreasing performance of a galvanizing sheet steel using laboratory degreasing and galvanizing simulators. The concentration of NaOH for the good degreasing has been determined to be 6.0% and more and this concentration has been able to be automatically well controlled within $\pm$0.1% by employing a solution electrical conductivity meter under a flow injection analysis condition rather than by employing a sodium ion selective electrode in the degreasing simulator. Frequent blocking of the spraying nozzles of the solution has been reduced considerably by the set-up and periodical operation of an automatic valve system in the nozzle system. By applying this automatic valve system and by automatic controlling the NaOH concentration and other ordinary variables in the degreasing process, the degreasing performance has been increased from the conventional 76% to the new 85%.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1202-1215
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• 1996

In this study, in order to achieve the uniformity of mechanical properties and microstructures of a hot-rolled coil in the transversal direction, the edge mask device is newly device is newly developed and installed at the upper laminar-flow cooling head in the run out table, which controls the transversal temperature of strip with enco panel and bar edge heater. The device that is transversally movable prevents the temperature drop of strip edge by blocking the cooling water into the strip edge. So, the pattern of edge mask set-up condition of the device was derived by analyzing the characteristics of strip temperature and mechanical properties according to the on-line application of edge mask.

• Proceedings of the Korea Information Processing Society Conference
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• 2015.04a
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• pp.139-142
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• 2015

데이터 센터에서는 물리적인 규모 증가와는 달리 별도의 처리 없이는 분산처리 프레임워크가 동일한 클러스터 내에서 복수로 동작할 수 없어 전체 환경을 정적으로 분할하여 이들을 배치하는 것이 일반적이다. 그러나 최근 연구에서는 복수의 프레임워크를 한 클러스터 내에서 동작시킴으로써 클러스터의 활용률을 높이는 방향으로 이루어지고 있다. Mesos는 복수의 분산처리 프레임워크를 한 클러스터에서 동작시키기 위한 시스템 중 하나로 각 프레임워크 스케줄러의 스케줄링을 지원하는 단일 Allocation Module을 가진다. Allocation Module은 모든 Slave와 프레임워크 스케줄러들의 요청을 처리하는데, 시스템 규모가 커질수록 Allocation Module으로 집중되는 부하가 증가하여 이에 따른 할당 속도 저하로 정상적인 동작이 불가능해진다. 이 문제를 해결하기 위해 본 논문에서는 Mesos 시스템의 Allocation Module 병렬화를 제안한다. 제안 방식을 통해 Allocation Module의 부하를 분산함과 동시에 Head-of-line Blocking으로 인한 스케줄링 지연 문제를 해결할 수 있을 것이다.

• The KIPS Transactions:PartC
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• v.10C no.4
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• pp.463-470
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• 2003

Many types of switching fabrics have been proposed for use in ATM networks. Multistage Interconnection Networks (MINs) constitute a large class of ATM switching systems that are widely used in today´s internetworking. One of the most veil-known types of multistage networks is the banyan network. The banyan network is attractive for its simple routing scheme and low hardware complexity, but its throughput is very limited due to internal blocking and output contention. In this paper, we propose an input-buffered dual-banyan switch model with multiple switching fabric between switch input and output to avoid internal and Head-of Line blocking. By performance analysis and simulation, we show that our model has a lower ceil delay and 96% throughput which is much better than other banyan-type switch architecture.

• KIPS Transactions on Software and Data Engineering
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• v.8 no.4
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• pp.171-178
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• 2019

The use of anti-scatter grids in radiographic imaging has the advantage of preventing the image distortion caused by scattered radiation. However, it carries the side effect of leaving artifacts in the X-ray image. In this paper, we propose a grid line suppression technique using discrete cosine transform(DCT). In X-ray images, the grid lines have different characteristics depending on the shape of the object and the area of the image. To solve this problem, we adopt the DCT transform based on a dynamic segmentation, and propose a filter transfer function for each individual segment. An algorithm for detecting the band of grid lines in frequency domain and a band stop filter(BSF) with a filter transfer function of a combination of Kaiser window and Butterworth filter have been proposed. To solve the blocking effects, we present a method to determine the pixel values using multiple structured images. The validity of the proposed theory has been evaluated from the experimental results using 140 X-ray images.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.35 no.2
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• pp.66-73
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• 2009

Tumor angiogenesis is a process leading to formation of blood vessels within tumors and is crucial for maintaining a supply of oxygen and nutrients to support tumor growth and metastasis. Vascular endothelial growth factor(VEGF) plays a key role in tumor angiogenesis including induction of endothelial cell proliferation, migration, survival and capillary tube formation. VEGF binds to two distinct receptors on endothelial cells. VEGFR-2 is considered to be the dominant signaling receptor for endothelial cell permeability, proliferation, and differentiation. Bevacizumab(Avastin, Genetech, USA) is a monoclonal antibody against vascular endothelial growth factor. It is used in the treatment of cancer, where it inhibits tumor growth by blocking the formation of new blood vessels. The goal of this study is to identify the anti-tumor effect of Bevacizumab(Avastin) for oral squamous cell carcinoma cell lines. Human squamous cell carcinoma cell line(HN4) was used in this study. We examined the sensitivity of HN4 cell line to Bevacizumab(Avastin) by using in vitro proliferation assays. The results were as follows. 1. In the result of MTT assay according to concentration of Bevacizumab(Avastin), antiproliferative effect for oral squamous cell carcinoma cell lines was observed. 2. The growth curve of cell line showed the gradual growth inhibition of oral squamous cell carcinoma cell lines after exposure of Bevacizumab(Avastin). 3. In the apoptotic index, groups inoculated Bevacizumab(Avastin) were higher than control groups. 4. In condition of serum starvation, VEGFR-2 did not show any detectable autophosphorylation, whereas the addition of VEGF activated the receptor. Suppression of phosphorylated VEGFR-2 and phosphorylated MAPK was observed following treatment with Bevacizumab(Avastin) in a dose-dependent manner. 5. In TEM view, dispersed nuclear membrane, scattered many cytoplasmic vacuoles and localized chromosomal margination after Bevacizumab(Avastin) treatment were observed. These findings suggest that Bevacizumab(Avastin) has the potential to inhibit MAPK pathway in proliferation of oral squamous cell carcinoma cell lines via inhibition of VEGF-dependent tumor growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.