• Title/Summary/Keyword: Light-emitting diodes(LEDs)

Search Result 363, Processing Time 0.027 seconds

High extraction efficiency of photonic crystal microcavity GaN based light emitting diode

  • Cho, Min-Su;Moon, Ki-Won;Han, Hae-Wook;Yoon, Ji-Su;Jeong, Byoung-Koan;Shin, Jong-Keun;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
    • /
    • pp.471-472
    • /
    • 2007
  • We have demonstrated that the light extraction efficiency of GaN based light emitting diodes (LEDs) can be significantly enhanced by using photonic crystal and microcavity (PCMC) effects. It was found that the extraction efficiency of the PCMC-LEDs is 9.5 times larger than that of the normal LEDs.

  • PDF

Poly(3-octylthiophene) 전계발광소자의 발광특성 (Emitting characteristics of poly(3-octylthiophene) electroluminescent devices)

  • 서부완;김주승;구할본
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
    • /
    • pp.131-134
    • /
    • 2000
  • Electroluminescent[EL] from conjugated polymers has recently received great attention because polymer light-emitting diodes[LEDs] clearly have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the electrodes, followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material In this paper, we fabricated the single layer EL device using poly(3-octylthiophene)[P3OT] as emitting material. The orange-red light was clearly visible in a dark room Maximum peak wavelength of EL spectrum saw at 640nm in accordance with photon energy 1.9eV. And we know that ionization energy of P3OT is 4.7eV from the cyclic voltammetry.

  • PDF

가시오갈피 기내 식물체의 생장, 형태형성 및 eleutheroside 함량에 미치는 발광다이오드의 효과 (Effects of LED on Growth, Morphogenesis and Eleutheroside Contents of in vitro Cultured Plantlets of Eleutherococcus senticosus Maxim)

  • 정재훈;김영선;문흥규;황성진;최용의
    • 한국약용작물학회지
    • /
    • 제17권1호
    • /
    • pp.39-45
    • /
    • 2009
  • The effects of red, blue, and far-red light by illumination of light emitting diodes (LEDs) on growth, morphogenesis and eleutheroside contents of in vitro plantlets of Eleutherococcus senticosus were examined. As a control, plantlets were grown under a broad spectrum white fluorescent lamp (16/8 h illumination). The length of plantlets grown under the red/blue LEDs was taller than those under fluorescent lamps. Leaf area, root length and fresh weight of plantlets were highest under blue light compared to other kinds of light sources. Chlorophyll contents in plantlets grown under fluorescent lamps were higher than those in plantlets grown under LED illumination. Production of eleuthroside B and E in plantlets was highest under blue LED. However, production of eleuthroside E1 was highest under fluorescent lamps. These results suggest that plant growth and eleuthroside accumulation can be controlled by wave length of light under LED illumination system.

도라지 배양묘의 생장 및 형태형성에 미치는 발광다이오우드의 효과 (Effects of Light Emitting Diodes on Growth and Morphogenesis of in vitro Seedlings in Platycodon grandiflorum)

  • 은종선;김영선;김용현
    • 식물조직배양학회지
    • /
    • 제27권1호
    • /
    • pp.71-75
    • /
    • 2000
  • 발광다이오우드 (Light emitting diode)를 사용한 적색, 녹색 및 청색광에서 식물생산의 가능성을 조사하기 위하여 도라지 유묘의 생장과 형태형성에 미치는 광질의 효과와 광질에 따른 엽록소함량을 형광등과 비교하여 조사하였다. 식물체의 초장은 형광등에서 3.8 cm로 가장 짧았고 LEDs 에서 생장한 것은 적색광에서 13.4cm로 가장 길었다. 반면에 적색/청색의 혼합광은 5.6cm로 적색 단색광에서 식물체가 도장된 것에 비해 정상적인 식물체의 생장양상을 보여 적색과 청색의 혼합광이 식물체의 생장에 적당하였다. 엽면적은 녹색광에서 24.1 $\textrm{cm}^2$로서 적색광에서 10.1 $\textrm{cm}^2$인 것에 비하여 약 2.4 배가 더 넓어 다른 처리구에 비하여 가장 양호하였다. 건물률은 적색/청색의 혼합광에서 15.3%를 나타내어 다른 광질처리보다 함수율이 적었다. 엽록소함량은 청색 단색광과 적색/청색의 혼합광에서 형광등보다 각각 20%, 10% 적었으나 적색과 녹색의 경우 각각 2%, 7% 적었는데 적색 단색광에서 형광등과 비슷한 엽록소 함량을 보였다.

  • PDF

Enhancement of light extraction efficiency in vertical light-emitting diodes with MgO nano-pyramids structure

  • Son, Jun-Ho;Yu, Hak-Ki;Lee, Jong-Lam
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2010년도 춘계학술회의 초록집
    • /
    • pp.16-16
    • /
    • 2010
  • GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

  • PDF

Phototactic behavior 10: phototactic behavioral effects of Plodia interpunctella (Hübner) (Lepidoptera: Pyralidae) adults to different light-emitting diodes of seven wavelengths

  • Park, Jun-Hwan;Lee, Hoi-Seon
    • Journal of Applied Biological Chemistry
    • /
    • 제59권2호
    • /
    • pp.95-98
    • /
    • 2016
  • Phototactic behavioral responses of the Indian meal moth, Plodia interpunctella ($H{\ddot{u}}bner$), adults were determined to different light-emitting diodes (LEDs) of seven wavelengths, and their behavioral responses were compared to that using a commercial luring lamp (BLB) under laboratory conditions. Based on the attractive responses under optimal light conditions (60 lx luminance intensity and 30 min light exposure time), the green LED ($520{\pm}5nm$) showed the highest attractive rate ($520{\pm}5nm$, 52.2 %), followed by the blue LED ($470{\pm}10nm$, 33.9 %), the yellow LED ($590{\pm}5nm$, 32.2 %), BLB (28.9 %), UV LED (365 nm, 22.8 %), the red LED ($625{\pm}10nm$, 14.5 %), the white LED (450-620 nm, 10.6 %), and IR LED (730 nm, 9.5 %). In addition, the green LED to P. interpunctella adults was approximately 1.81 times more attractive than BLB. These results indicate that the green LED could be most useful for monitoring of P. interpunctella adults.

Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics

  • Park, Yoon-Soo
    • 한국결정성장학회지
    • /
    • 제12권1호
    • /
    • pp.11-20
    • /
    • 2002
  • The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

A Study on ZnSSe : Te/ZnMgSSe DH Structure Blue and Green Light Emitting Diodes

  • Lee Hong-Chan
    • Journal of Advanced Marine Engineering and Technology
    • /
    • 제29권7호
    • /
    • pp.795-800
    • /
    • 2005
  • The optical properties of $ZnS_{y}Se_{1-x-y}:Te_x\;(x\;<\;0.08,\;y\∼0.11$) alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_{1}$Tel and $Te_{n}$ (n$\geq$2) cluster bound excitons, respectively. Bright blue (462 nm) and green (535 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer.

Temperature Dependence of Efficiency Droop in GaN-based Blue Light-emitting Diodes from 20 to 80℃

  • Ryu, Guen-Hwan;Seo, Dong-Joo;Ryu, Han-Youl
    • Current Optics and Photonics
    • /
    • 제2권5호
    • /
    • pp.468-473
    • /
    • 2018
  • We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.