• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.588-593
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• 2014

Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.192.2-192.2
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• 2015

본 논문에서는 사파이어 기판 표면에 레이저 처리를 통해 격자 구조(레이저 격자 구조)를 제작하고 InGaN/GaN 발광다이오드(Light-Emitting Diodes, LED) 박막을 성장 한 시료에서 Bowing 특성 변화를 논의한다. 그리고 Bowing 정도에 따른 InGaN/GaN LED의 광학 및 전기적 특성을 Photoluminescence (PL)와 Electroluminescence (EL) Mapping 법을 이용하여 상호 비교 분석하였다. 2-인치 사파이어 기판 상에 레이저 격자 구조의 간격은 1 mm (GS1-LED), 2 mm (GS2-LED), 3 mm (GS3-LED) 로 제작하였으며, 격자 구조가 없는 LED를 기준 시료(C-LED)로 사용하였다. GS1-LED, GS2-LED, GS3-LED의 Bowing 정도는 C-LED 대비 각각 8%, 7.6%, 6.4% 감소하였다. PL Mapping 결과, GS-LED의 발광 파장의 분포 균일도가 C-LED 보다 개선되는 것을 확인하였고, 파장이 C-LED 대비 단파장으로 이동하였다. 또한, GS-LED시료의 PL 강도는 C-LED보다 증가하였고, 특히 GS2-LED의 PL 강도는 C-LED 대비 6.9% 증가 하였다. EL mapping 결과, GS-LED 발광 파장의 분포 균일도는 PL 결과와 유사하게 측정되었으며, 2인치 기판 전체 면적에 대한 GS-LED의 주요 동작전압 및 출력 전력 수율이 C-LED대비 현저히 개선되었다. 사파이어 기판 표면에 제작한 레이저 격자 구조에 따른 InGaN/GaN LED의 광학적, 전기적 특성을 Bowing의 개선과 응력 완화 현상으로 논의 할 예정이다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.114-121
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• 2015

In conventional LEDs, a mesa-structure is usually used and it causes the current to be overcrowded in a specific region. We propose a novel structure of GaN-based LED to overcome this problem. In order to distribute the current in an active region, a spreading pad is inserted at the p-type region in the GaN based LED device. The inserted spreading pad helps the current flow because it is more conductive than the p-type GaN layer. By performing electrical and optical simulations, the effects of the spreading pad insertion are confirmed. The results of electrical simulation show that the current spreads more uniformly and more radiative recombination is produced as well. Moreover, from the optical simulation, it is revealed that the ITO is less absorptive material than p-GaN if the condition of specific wavelength sources is satisfied. Considering all of the results, we can conclude that the luminescent power is enhanced by the spreading pad.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.128-133
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• 2002

In a recent effort to develop polymer light-emitting diodes (LEDs) as promising flat panel display components, measurements of reliable absolute photoluminescence (PL) and electroluminescence (EL) efficiency for polymer materials are required. In this work, we performed the measurement of PL and EL efficiency of luminescent polymers using an integrating sphere technique. The external PL efficiency of MEH-PPV was estimated to be 8 ($\pm$2)% together with the value of 0.02 1m/W for the external EL efficiency. This PL efficiency is in good agreement with published values, indicating that our PL efficiency measurements are somewhat legitimate. We believe this study might contribute to the research and development of organic materials for optoelectronic devices.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.1-6
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• 2000

We prepared organic light-emitting-diodes (LEDs) with a squarylium(Sq)-doped aluminum quinoline(Alq3) emission layer by the vapor deposition method. We discussed their electro-luminescence(EL) and electrical properties. The EL from Sq had a peak wavelength of 670nm and a half-width of 30nm. Only the EL from So(purely red) could be observed at the doping concentration of over 15mol%, but the luminance were low (0.21cd/$m^2$, 0.1cd/$m^2$) and EL efficiency was under the $10^{-2}$W. Although Sq molecules seemed to act as trap site in Alq3 molecules, they acted as carrier drafts site at doping concentration of over 5mol%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.202-206
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• 2007

ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1270-1271
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• 2008

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.