• Title/Summary/Keyword: Light-emission efficiency

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White OLEDs with a Single Emissive Layer (단일발광층을 이용한 백색 OLED)

  • Chu, Hye-Yong;Lee, Jeong-Ik;Yang, Yong-Suk;Oh, Ji-Young;KoPark, Sang-Hee;Kim, Mi-Kyung;Hwang, Chi-Sun;Jung, Byung-Jun;Shim, Hong-Ku;Jang, Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.43-46
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    • 2004
  • We demonstrated efficient white light emitting OLEDs with a single emissive layer structure, which was blue-emitting 1,4-bis[2,2-diphenylvinyl]biphenyl (DPVBi) doped with blue luminescent amino-substituted distyrylarylene amine (DSA-amine) and red luminescent [2,6-bis[2-[5-(dibutylamino) phenyl]vinyl]-4H -pyran-4-ylidene]propanedinitrile (DADB). Through the optimization of the device structure, the white light emission with full visible spectral range was obtained. Its CIE color coordinates was (0.32,0.42) at 10 $mA/cm^2$ and the external quantum efficiency, the luminance efficiency and the luminance yield were 3.7 %, 3.3 lm/W and 9.0 cd/A, respectively.

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Light Scattering Effect Based Silica in Dye-sensitized $TiO_2$ Photovoltaic Cells ($TiO_2$ 광전극의 광산란 특성을 이용한 염료감응형 태양전지)

  • Wang, Jiao;Jin, En Mei;Zhao, Xingguan;Park, Kyung-Hee;Gu, Hal-Bon;Park, Bok-Kee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.213-213
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    • 2010
  • In this thesis, we studied to increased to solar conversion efficiency of DSSC (dye-sensitized solar cell) using nanocrystalline $TiO_2$ semiconductor. We are preparation of $TiO_2$ photoelectrode, assembly the DSSC and put a focus in analyses electrochemical properties of DSSC and using Silica powder in $TiO_2$ photoelectrode for increase light scattering effect and improved conversion efficiency. It attempt to investigate the morphology of the photoelectrode and photovoltaic effects using field emission scanning electron microscopy (FE-SEM) and photovoltaic properties under illumination with AM 1.5 simulated sunlight. We got 146 % enhanced power conversion efficiency when the optimal content of quartz glass powder was 5 wt.% than that another content.

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The Study of fabrication and characteristics of Inorganic EL Device with combination of high dielectric constant layer (고유전 유전막을 적용한 Inorganic EL Device 제작 및 특성 연구)

  • Lee, Gun-Sub;Ryu, Ji-Ho;An, Sung-Il;Lee, Seong-Eui
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.392-393
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    • 2007
  • In this paper, we report the characteristics inorganic EL device with high dielectric constant materials of PMN, PZT. Fabricated EL device shows stable light emission even at 20kHz -400Volt without any break down failure. Brightness voltage curve of EL device is same with typical EL. As increasing applied voltage, the brightness increased linearly. From the results of Frequency and duty ratio variation, over 50% of brightness increment was seen. Luminous efficiency was increased upto 200V range and saturated over 200V by slow increasement of light emission. We got e bright stable emission of 1733 cd/m2 at the condition of Frequency 35 KHz, Duty 10%, 400V.

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Recent Progress in Blue Perovskite LEDs

  • Joonyun, Kim;Jinu, Park;Byungha, Shin
    • Korean Journal of Materials Research
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    • v.32 no.11
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    • pp.449-457
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    • 2022
  • Halide perovskites are emerging materials for next-generation display applications, thanks to their narrow emission linewidth and band gap tunability, capable of covering the entire range of visible light. Despite their short period of research, perovskite light emitting diodes (PeLEDs) have shown rapid progress in device external quantum efficiency (EQE) in the near-infrared (NIR), red, and green emission wavelengths, and the record EQE has exceeded over 20 %. However there has been limited progress with blue emission compared to the red and green counterparts. In this review, the current status and challenges of blue PeLEDs are introduced, and strategies to produce spectrally stable blue PeLEDs are discussed. The strategies include 1) a mixed halide system in the form of 3-dimensional (3D) perovskites, 2) colloidal perovskite nanocrystals and 3) low dimensional perovskites, known as quasi-2D perovskites. In the mixed halide system, previous reports based on the compositional engineering of 3D perovskites to reduce spectral instability (i.e., halide segregation) will be discussed. Since spectral instability issue originate from the mixed halide composition in perovskites, the two other strategies are based on enlarging the band gap with a single halide composition. Finally, the prospects for each strategy are discussed, for further improvement in spectrally stable blue PeLEDs.

Polarized Light Emission of Liquid Crystalline Polymer Blends (액정성 고분자 블렌드의 편발광)

  • 김영철;조현남;김동영;홍재민;송남웅
    • Polymer(Korea)
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    • v.24 no.2
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    • pp.211-219
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    • 2000
  • Fluorene-based light emitting polymer blends with liquid crystalline characteristics were studied on effective energy transfer and dichroic characteristics. Incorporating 0.5 wt% of the non-liquid crystalline into the liquid crystalline polymer suppressed the PL emission at 420 nm on photoexcitation at 360 nm, but generated a new PL emission of the non-liquid crystalline polymer at 480 nm. The highest PL intensity at 480 nm, which was 13 times stronger than those of the two polymers before blending, was observed for a blend with 2.0 wt% of the non-liquid crystalline polymer. When the molecules of the blends were aligned on a rubbed polyimide surface by a heating-cooling process, the dichroic ratio and the order parameter were 2.0 and 0.25, respectively. Time-correlated single photon counting (TCSPC) study revealed that the time required for energy transfer between the two chromophores was shortened by 93 ps when the blends were aligned on the rubbed polyimide surface by the heating-cooling process. The thermal treatment also enhanced the energy transfer efficiency by 9%.

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Enhancement of light extraction efficiency in vertical light-emitting diodes with MgO nano-pyramids structure

  • Son, Jun-Ho;Yu, Hak-Ki;Lee, Jong-Lam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03a
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    • pp.16-16
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    • 2010
  • GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

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Investigation of the Green Emission Profile in PHOLED by Gasket Doping

  • Park, Won-Hyeok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.226-226
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    • 2016
  • PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

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NOx Conversion Efficiency of SCR Diesel Vehicle Under Cold Start Condition (냉간 시동 조건에서의 SCR 경유자동차의 NOx 전환 효율)

  • Lee, Dong In;Yu, Young Soo;Park, Junhong;Chon, Mun Soo;Cha, Junepyo
    • Journal of ILASS-Korea
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    • v.23 no.4
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    • pp.244-253
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    • 2018
  • Recently, The ministry of Environment in korea have introduced Euro-6d temp which was strengthened at the same time as Europe. Small Light-duty passenger vehicles need the SCR system of after-treatment to meet enhanced emission regulations. However, SCR system has a low conversion efficiency in a low temperature less than 200 degree. In this study, the NOx conversion efficiency of SCR system was analyzed by installing a NOx sensors and a temperature sensors in a diesel vehicle. Also, in order to analyze the effect of the cold-start, the test was performed on the same RDE route and compared with the test of hot-start. As a result, SCR system has characteristics of low conversion efficiency under cold-start conditions.

The Inactivation Effects of UV Light on Bacteriophage f2 (박테리오파지 f2에 대한 자외광선의 살균효과)

  • Kim, Chi-Kyung;Quae Chae
    • Microbiology and Biotechnology Letters
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    • v.11 no.3
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    • pp.155-161
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    • 1983
  • The effects of ultraviolet light on bacteriophage f2 were investigated to determine the inactivation kinetics and its mechanism. The 260nm light showed a little higher inactivation rate than the one of 300 nm. In this work, our main concern was whether structural and/or conformational changes in the protein capsid could occur by UV irradiation. The inactivation for the first 20 minutes irradiation was rapid with a loss of about 4 logs and followed by a slower rate during the next 40 minutes with no survival noted in the samples irradiated for 90 minutes or longer. The structural change of the protein capsid was examined by optical spectroscopic techniques and electron microscopy. The absorption spectra of the UV irradiated phages showed no detectable differences in terms of the spectral shape and intensity from the control phage. However, the fluorescence emission spectroscopic data, i.e. 1) fluorescence quenching of tryptophan residues upon irradiation of 300 nm light, 2) enhancement of fluorescence emission of ANS (8-aniline-1-naphthalene sulfonate) bound to the intact phages compared to the one in the UV-treated phages, and 3) decrease of energy transfer efficiency from tryptophan to ANS in the UV-treated samples, presented remarkable differences between the intact and UV-treated phages. Such a structural alteration was also observed by electron microscopy The UV-treated phages appeared to be broken and empty capsids. Therefore, the inactivation of the bacteriophage f2 by UV irradiation is thought to be attributed to the structural change in the protein capsid as well as damage in the viral RNA by UV irradiation.

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A Study on the Al2O3 Thin Film According to ALD Argon Purge Flow Rate and Application to the Encapsulation of OLED (ALD 아르곤 퍼지유량에 따른 Al2O3박막 분석 및 유기발광 다이오드 봉지막 적용에 관한 연구)

  • DongWoon Lee;Ki Rak Kim;Eou Sik Cho;Yong-min Jeon;Sang Jik Kwon
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.23-27
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    • 2023
  • Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al2O3 thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al2O3 thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al2O3 thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

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