• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.1
• /
• pp.105-108
• /
• 2011

Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.518-520
• /
• 1997

Recently, thiophene oligomer with short chain lengths has received much attention as model compounds for facilitating better understanding of electronic and optical properties of polymers, because oligomer is well-defined chemical systems and its conjugation chain length can be exactly controlled. Moreover, organic this films based on conjugated thiophene oligomer have potential for application to electronic and optoelectronic devices such as MISFETs(metal-insulator-semiconductor field-effect transistors) and LEDs(light-emitting diodes). However, there is little knowledge on electronic and structural properties of linear-conjugated oligothiophenes in solid states, compared with those in solutions. $\alpha$-sexithienyl($\alpha$-6T) thin-films were deposited by OMBD(Organic Molecular Beam Deposition) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The $\alpha$-6T films were deposited under various conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The $\alpha$-6T films deposited at an elevated substrate temperature showed higher conductivity than the film deposited at room temperature. Electrical characterization of these films will be also executed by using four-point probe measurement technique.

• Korean Journal of Materials Research
• /
• v.26 no.2
• /
• pp.100-108
• /
• 2016

Zinc Sulfide (ZnS) is one of the II-VI semiconducting materials, having novel fundamental properties and diverse areas of application such as light-emitting diodes (LEDs), electroluminescence, flat panel displays, infrared windows, catalyst, chemical sensors, biosensors, lasers and biodevices, etc. However, despite the remarkable versatility and prospective potential of ZnS, research and development (R&D) into its applications has not been performed in much detail relative to research into other inorganic semiconductors. In this study, based on global patent information, we analyzed recent technical trends and the current status of R&D into ZnS applications. Furthermore, we provided new technical insight into ZnS applicable fields using in-depth analysis. Especially, this report suggests that ZnS, due to its infrared-transmitting optical property, is a promising material in astronomy and military fields for lenses of infrared systems. The patent information analysis in this report will be utilized in the process of identifying the current positioning of technology and the direction of future R&D.

• Tribology and Lubricants
• /
• v.35 no.6
• /
• pp.323-329
• /
• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.4
• /
• pp.87-92
• /
• 2007

A $CaAl_{12}O_{19}:Mn^{4+}$ red phosphor showed the highest emission intensity at a concentration of 0.02mole $Mn^{4+}$ and the high crystallinity and luminescent properties were obtained at $1600^{\circ}C$ firing temperature for 3hr. The synthesized phosphor showed a broad emission band at 658nm wavelength. Red light-emitting diodes(LEDs) were fabricated through the integration of on InGaN UV bare chip and a 1:3 ratio of $CaAl_{12}O_{19}:Mn^{4+}$ and epoxy resin in a single package. This coated LED can be applicable to make White LEDs under excitation energy of UV LED.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.194-200
• /
• 2020

Perylene bisimide derivatives are developed for red organic phosphor because of their advantages, such as excellent luminous efficiency and high thermal stability. Despite these advantages, they have poor solubility characteristics in organic solvents and short emission wavelength as red organic phosphor for hybrid light-emitting diodes (LEDs). In this study, we prepared terrylene bisimide using a coupling reaction and swallow-tail imide group, which has excellent solubility. The structures and properties of swallow-tail terrylene bisimide (9C) were analyzed using ¹H-nuclear magnetic resonance (¹H-NMR), Fourier-transform infrared (FT-IR), UV/Vis spectroscopy, and thermal gravimetric analysis (TGA). The maximum absorption wavelength of (9C) in the UV/Vis spectrum was 647 nm, and the maximum emission wavelength was 676 nm. In the TGA, (9C) demonstrated good thermal stability with less than 5 wt% weight loss up to 415℃. In the solubility test, (9C) has a good solubility of more than 5 wt% in chloroform and dichloromethane. When the compounds (9C) were mixed with PMMA (polymethly methacrylate), the films showed peaks at 680 nm in the PL spectra. The results verify the suitability of (9C) as a red organic phosphor for hybrid LEDs.

• Journal of agriculture & life science
• /
• v.53 no.6
• /
• pp.13-21
• /
• 2019

The influences of light generated by LEDs on shoot growth and photosynthesis of Tea plant(Camellia sinensis L.) were evaluated. The growth characteristics were investigated after 45 days of culture under four different light qualities: fluorescent lamp, red LED, blue LED, red+blue+white LED. Shoot growth was promoted by red light, especially root length and area were further promoted under the red+blue+white LED. Also, T/R ratio and Chlorophyll content were highest in red+blue+white. Fluor Cam was used to measure the fluorescence images of the plants, inhibition of photochemical efficiency(Fv/Fm) were not changed in all treatment. However, non-photochemical quenching(NPQ) were found rapidly increasing in blue LED, these results were that blue LED were inhibit photosynthetic efficiency and must be considered for efficiently in vitro cultivation of the tea plant. The above results suggest that light qualities could be an important factor to foster in vitro growth of the species. Also, In order to produce healthy plants, it is effective to using light qualities of red+blue+white LED on in vitro culture of the tea plant. These results could be used to mass propagating shoot and produce of healthy seedling.

• Journal of the Korean Society of Laryngology, Phoniatrics and Logopedics
• /
• v.17 no.1
• /
• pp.28-37
• /
• 2006

Purpose: Evaluation of vocal cord vibration is very important in cases of voice disorders. There are several equipments for examining the vocal fold vibration such as laryngeal stroboscope, ultra high-speed digital imaging system, and videokymograph. Among these, laryngeal stroboscope is the most popular equipment because of easy to examine the laryngeal pathology. However, current laryngo-stroboscopes are too bulky to move and relatively expensive. The purpose of this research is to develope a portable laryngeal stroboscope of equivalent performance with the current equipments. Methods and Materials: Recently developed high luminescent white LEDs(light emitting diodes) are placed at the head of the endoscope as light sources for the CCD image sensor which is also placed at the head with imaging lens. This arrangement eliminates the bulky light source like expensive halogen or xenon lamps as well as the optical light guiding cables. The LEDs are controlled to flash in phase with the voice frequency of the examinee. The CCD captures these strobo images and converts them into video signals for examinations. Results: There was no functional differences between preexisting stroboscope and the newly developed stroboscope of this study. LED light sources and microprocessor based control circuits of the stroboscope enabled the development of flicker-less, hand-held, portable and battery-operating stroboscope. Conclusion: The developed stroboscope is cost-effective, small-sized, easy to use and very easy desirable to bring and to use in any place.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.2
• /
• pp.41-45
• /
• 2012

Oxynitride green phosphors for white light emitting diodes (LEDs) were synthesized and their optical properties were evaluated. The N/O ratio ($\delta$) of $SrSi_2O_{2-{\delta}}N_{2+2/3{\delta}}:Eu^{2+}$ closely depended on the synthesizing conditions. The most excellent green emission (545 nm), which was assigned to the $5d{\rightarrow}4f$ transition of $Eu^{2+}$ ions, was achieved at the conditions of $1700^{\circ}C$, 5 mol% $Eu^{2+}$, and $H_2$ atmosphere. The well-developed $Ca-{\alpha}-SiAlON:Yb^{2+}$ particles with homogeneous size were obtained at m = 3 (n = 0.15) for the compound of $Ca_{0.5m-0.005}Yb_{0.005}Si_{12-(m+n)}Al_{m+n}O_nN_{16-n}$, resulting in the strong green emission at around 550 nm.

• Korean Journal of Metals and Materials
• /
• v.48 no.5
• /
• pp.456-461
• /
• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.