• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.125-125
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• 2010

극성 [0001] 방향으로 성장된 질화물 기반의 LED (light emitting diode) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE)에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 InGaN/GaN이나 AlGaN/GaN 양자 우물구조를 GaN의 m-plane (1$\bar{1}$00) 이나 a-plane (11$\bar{2}$0) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성 면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. GaN 층의 표면을 평탄화하고 결정성을 향상시키기 위해서 저온 GaN 또는 AlN 버퍼층을 성장하는 2단계 방법이나 고온 버퍼층을 이용하여 성장하는 연구들이 많이 진행되고 있다. 본 연구에서는 고온 GaN 버퍼층을 이용하여 기존의 2단계 성장과정을 단순화한 비극성 a-plane GaN을 r-plane 사파이어 기판위에 유기금속 화학증착법 (MOCVD)으로 성장하였다. 사파이어 기판위에 AlN 층을 형성하기 위한 nitridation 과정 후 1030 도에서 두께 45 ~ 800 nm의 고온 GaN 버퍼층을 성장하고 총 박막 두께가 2.7 ~ 3 um 가 되도록 a-plane GaN을 성장하여 표면 양상의 변화와 결정성을 확인하였다. 또한 a-plane GaN 박막 성장 시에 성장 압력을 100 ~ 300 torr 로 조절하며 박막 성장의 변화 양상을 관찰하였다. 고온 GaN 버퍼층 성장 두께가 감소함에 따라 결정성은 증가하였으나 표면의 삼각형 형태의 pit 밀도가 증가함을 확인하였다. 또한 성장 압력이 감소함에 따라 표면 pit은 감소하였으나 결정성도 감소하는 것을 확인하였다. 성장 압력과 버퍼층 성장 두께를 조절하여 표면에 삼각형 형태의 pit이 존재하지 않는 RMS roughness 0.99 nm, 관통전위밀도 $1.78\;{\times}\;10^{10}/cm^2$, XRD 반가폭이 [0001], [1$\bar{1}$00] 방향으로 각 798, 1909 arcsec 인 a-plane GaN을 성장하였다. 이 연구를 통해 고온 GaN 버퍼 성장방법을 이용하여 간소화된 공정으로 LED 소자 제작에 사용할 수 있는 결정성 높은 a-plane GaN을 성장할 수 있는 가능성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.745-752
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• 2016

In the era of the Internet of Things, where all physical objects are connected to the Internet, we suggest a remote control system using a Raspberry Pi single-board computer with ZigBee, which can turn an indoor light-emitting diode (LED) and a multiple-tap on and off, and with a smart phone can control the brightness of the LED as well as an electronic door lock. By connecting an infrared (IR) transmitter module to the Raspberry Pi, we can control home appliances, such as an air conditioner, and we can also monitor indoor images, indoor temperatures, and illumination by using a smart phone app. We developed a method of finding out IR transmission codes required for remote-controllable appliances with an AVR micro-controller. We suggest a method to remotely open and shut an office door by novating the door lock. The brightness level of an LED (between 0 and 10) can be controlled through a PWM signal generated by an ATmega88 microcontroller. A mutiple-tap is controlled using an ATmega32, a photo-coupler, and a TRIAC. The signals for measured temperature and illumination are converted from analog to digital by using the ATtiny44A microcontroller transmitting to a Raspberry Pi through SPI communication. Then, we connect a camera to the CSI head of the Raspberry Pi. We can turn on the smart multiple-tap for a certain period of time, or we can schedule the multi-tap to turn on at a specific time. To reduce standby power, people usually pull out a power code from multiple-taps or turn off a switch. Our method helps people do the same thing with a smart phone, if they are away from home.

• Journal of Climate Change Research
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• v.4 no.3
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• pp.211-219
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• 2013

This study uses the LEAP model that is a long-term energy analysis model to analyze reduction potential on S city residential sector energy usage for greenhouse gas emission. Energy consumption of S-si in 2009 is consumed most in residential and commerce sector by 39.1%. Also, energy and greenhouse gas emission of residential sector is expected to increase due to increase of households. Therefore, greenhouse gas reduction measures are desperately required in residential sector. For this study recognizes energy consumption of S-si residential sector and has established reduction measure of S-si residential sector greenhouse gas through literature search on domestic and foreign climate change correspondence policies. Also, construction of greenhouse gas reduction potential by reduction measures through LEAP model. There were a total of 5 reduction measures scenarios is Reference Scenario, LED Lighting, Energy Alternative, Green Life Practice, and Total Reduction Measure. As a result, greenhouse gas emission of Light Emitting Diode Lightings by 2020 was $1,181.0thousand\;tonCO_2eq$, decrease of 6.1% compared to the Reference Scenario and Greenhouse gas emission of Energy Alternative by 2020 was $1,171.6thousand\;tonCO_2eq$, decrease of 6.8% compared to the Reference Scenario. Greenhouse gas emission of Green Life Practice by 2020 was $1,128.7thousand\;tonCO_2eq$, decrease of 10.2% compared to the Reference Scenario. For Total Reduction Measures by 2020 emission was $966.9thousand\;tonCO_2eq$, decrease 23.1% compared to Reference Scenario.

• Microbiology and Biotechnology Letters
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• v.47 no.3
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• pp.332-336
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• 2019

The use of ultraviolet (UV) spectroscopy for foods is known to have a microbial inhibitory effect. UV-A having a longer wavelength than UV-C can be used for continuous or intermittent UV irradiation of food stored in containers or packages. Because UV-LED can be used effectively at a low price, this study reported the effect of UV-A 365 nm-LED on inhibiting Bacillus subtilis in accordance with the packaging conditions employed in daily use. The packaging materials were linear low-density polyethylene (LLD-PE), nylon/low density polyethylene (LDPE), polystyrene, and glass. When all packaging materials were treated with 365 nm UV-LED, B. subtilis was observed to remain inactive for 30-60 min. Further, compared with the control (-log 5), the survival rate of B. subtilis was -log 2.0-2.5 for nylon/LDPE and -log 2.58-3.61 for LLD-PE. These packaging materials showed an excellent inhibitory effect regardless of their thickness. Typically, a decrease in the viable cell count of more than 3 log indicates a 99.9% bactericidal effect. These results suggest that 365 nm UV-LED permeated the packaging material and inhibited bacterial growth.

• Journal of Gastric Cancer
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• v.21 no.2
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• pp.191-202
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• 2021

Purpose: A near-infrared (NIR) fluorescence imaging is a promising tool for cancer-specific image guided surgery. Human epidermal receptor 2 (HER2) is one of the candidate markers for gastric cancer. In this study, we aimed to synthesize HER2-specific NIR fluorescence probes and evaluate their applicability in cancer-specific image-guided surgeries using an animal model. Materials and Methods: An NIR dye emitting light at 800 nm (IRDye800CW; Li-COR) was conjugated to trastuzumab and an HER2-specific affibody using a click mechanism. HER2 affinity was assessed using surface plasmon resonance. Gastric cancer cell lines (NCI-N87 and SNU-601) were subcutaneously implanted into female BALB/c nu (6-8 weeks old) mice. After intravenous injection of the probes, biodistribution and fluorescence signal intensity were measured using Lumina II (Perkin Elmer) and a laparoscopic NIR camera (InTheSmart). Results: Trastuzumab-IRDye800CW exhibited high affinity for HER2 (K_D=2.093(3) pM). Fluorescence signals in the liver and spleen were the highest at 24 hours post injection, while the signal in HER2-positive tumor cells increased until 72 hours, as assessed using the Lumina II system. The signal corresponding to the tumor was visually identified and clearly differentiated from the liver after 72 hours using a laparoscopic NIR camera. Affibody-IRDye800CW also exhibited high affinity for HER2 (K_D=4.71 nM); however, the signal was not identified in the tumor, probably owing to rapid renal clearance. Conclusions: Trastuzumab-IRDye800CW may be used as a potential NIR probe that can be injected 2-3 days before surgery to obtain high HER2-specific signal and contrast. Affibody-based NIR probes may require modifications to enhance mobilization to the tumor site.

• Journal of Mushroom
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• v.20 no.2
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• pp.78-85
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• 2022

The consumption of Flammulina velutipes mushroom imported from Korea has been associated with the cases of listeriosis in the United States, Canada, and Australia. We investigated the effect of sanitizing the plastic wrapper (used in packaging F. velutipes) with slightly acidic electrolyzed water (SAEW) and ultraviolet C waterproof light-emitting diode (UVC-W-LED) on reducing the Listeria monocytogenes. Further, the effect of UVC-LED on L. monocytogenes growth in F. velutipes at different storage temperatures (2, 4, and 10℃) was determined. The combined (SAEW+UVC-W-LED) treatment for 5-10 min reduced 99.9% of bacterial population from the contaminated plastic wrapper. In addition, the UVC-LED treatment for 3 min reduced the L. monocytogenes concentration in F. velutipes by 0.47 log CFU/g. Moreover, the growth of L. monocytogenes in the treated mushrooms was slower than that of the untreated (control) ones. L. monocytogenes concentration in F. velutipes increased over 3 log CFU/g at 2℃ and 10℃ for 60 and 10 days, respectively. The growth of L. monocytogenes at the bottom of mushrooms was faster than that at the top at both the temperatures. These results indicate that the combined SAEW+UVC-W-LED treatment of plastic wrappers and the UVC-LED treatment of mushrooms can be used as potential hurdle technologies to control the risk of L. monocytogenes in mushrooms prior to packaging at farms.