• Korean Chemical Engineering Research
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• 제44권5호
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• pp.513-519
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• 2006

본 연구에서는 유리(glass)와 석영(quartz)을 재질로 사용하여 MEMS(micro-electro mechanical systems) 공정을 통해 전기영동(electrophoresis)을 위한 microchip을 제작하였다. UV 광이 실리콘(silicon)을 투과하지 못하는 점에 착안하여, 다결정 실리콘(polycrystalline Si, poly-Si) 층을 채널 이외의 부분에 증착시킨 광 차단판(optical slit)에 의해 채널에만 집중된 UV 광의 신호/잡음비(signal-to-noise ratio: S/N ratio)를 크게 향상시켰다. Glass chip에서는 증착된 poly-Si 층이 식각 마스크(etch mask)의 역할을 하는 동시에 접합표면을 적절히 형성하여 양극 접합(anodic bonding)을 가능케 하 였다. Quartz 웨이퍼에 비해 불순물을 많이 포함하는 glass 웨이퍼에서는 표면이 거친 채널 내부를 형성하게 되어 시료용액의 미세한 흐름에 영향을 미치게 된다. 이에 따라, HF와 $NH_4F$ 용액에 의한 혼합 식각액(etchant)을 도입하여 표면 거칠기를 감소시켰다. 두 종류의 재질로 제작된 채널의 형태와 크기를 관찰하였고, microchip electrophoresis에 적용한 결과, quartz과 glass chip의 전기삼투 흐름속도(electroosmotic flow velocity)가 0.5와 0.36 mm/s로 측정되었다. Poly-Si 층에 의한 광 차단판의 존재에 의해, peak의 S/N ratio는 quartz chip이 약 2배 수준, glass chip이 약 3배 수준으로 향상되었고, UV 최대흡광 감도는 각각 약 1.6배 및 1.7배 정도 증가하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권8호
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2003년도 생물공학의 동향(XII)
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• pp.74-78
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• 2003

본 논문에서는 금속의 표면 플라즈몬 공명으로 인한 금속-유전체 경계면에서의 국소적 전자기장의 강화 효과를 이용하여 표면 플라즈몬을 유발하는 금 박막을 유리 기판위에 증착하고, 프리즘 커플러를 이용한 소산장의 공명 흡수현상을 이차원 영상 으로 얻었다. 특히 DNA/단백질 칩 등 향후 가능한 다채널 시스템에의 응용을 고려하여11-MUA, 11-MUOH 등 자기조립 단분자막(SAM)을 크롬 마스크와 리토그래피, 그리고 Shadow mask와 광 산화반응을 이용하여 금 표면 위에 패터닝 하였다. 텅스텐-할로겐 램프와 중심파장이 ${\lambda}_0=633$ nm의 대역통과 필터를 사용하여 이 평행광을 프리즘 커플러에 입사시켜 반사되어 나오는 반사광의 이차원 영상을 얻었다. 이와는 별도로 ${\lambda}_0=633$ nm의 레이저를 이용하여 단분자막이 코팅되어 있을 때와 없을 때의 공명각의 변화를 관찰하였다. 얻어진 이차원 영상의 위치에 따른 화소 값의 변화를 단분자 막의 두께의 변화에 따라 보정하고, 알려진 매질의 SPR 특성을 Fresnel 방정식에 따라 이론적으로 계산하면 다채널 표면 영상으로부터 항원-항체 등 단백질의 결합 정도를 정량적으로 측정할 수 있다.

• Biomaterials and Biomechanics in Bioengineering
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• 제3권3호
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• pp.129-140
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• 2016

This article reports the development of biodegradable photoluminescent polymer (BPLP)-based nanoparticles (NPs) incorporating either magnetic nanoparticles (BPLP-MNPs) or gadopentate dimeglumine (BPLP-Gd NPs), for cancer diagnosis and treatment. The aim of the study is to compare these nanoparticles in terms of their surface properties, fluorescence intensities, MR imaging capabilities, and in vitro characteristics to choose the most promising dual-imaging nanoprobe. Results indicate that BPLP-MNPs and BPLP-Gd NPs had a size of $195{\pm}43nm$ and $161{\pm}55nm$, respectively and showed good stability in DI water and 10% serum for 5 days. BPLP-Gd NPs showed similar fluorescence as the original BPLP materials under UV light, whereas BPLP-MNPs showed comparatively less fluorescence. VSM and MRI confirmed that the NPs retained their magnetic properties following encapsulation within BPLP. Further, in vitro studies using HPV-7 immortalized prostate epithelial cells and human dermal fibroblasts (HDFs) showed > 70% cell viability up to $100{\mu}g/ml$ NP concentration. Dose-dependent uptake of both types of NPs by PC3 and LNCaP prostate cancer cells was also observed. Thus, our results indicate that BPLP-Gd NPs would be more appropriate for use as a dual-imaging probe as the contrast agent does not mask the fluorescence of the polymer. Future studies would involve in vivo imaging following administration of BPLP-Gd NPs for biomedical applications including cancer detection.

• 한국통신학회논문지
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• 제24권12B호
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• pp.2335-2341
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• 1999

$2\times32$ 커플러는 마하젠더 간섭기와 Y분기 커플러로 구성하여 제작하였다. 커플러의 설계를 위해 유효굴절율법을 이용하여 3차원의 도파로 구조를 2차원 구조로 대체하였고 2차원 유한차분 빔전파법을 이용하여 도파로 구조에 대한 최적의 설계요소를 찾아내었다. 전산모사에 의하여 두 도파로 간의 높이가 $43.6\mu\textrm{m}$(경로차 $0.668\mu\textrm{m}$)로 제작한 $2\times32$ 커플러가 가장 우수한 특성을 나타냈다. 코아층의 식각 특성에 있어서 산화실리콘과 마스크인 알루미늄의 식각비는 30:1이었고 코아의 식각률은 2600${\AA}$/min이었다. 식각 균일도는 $\pm$5% 내외로 균일하였다. $2\times32$ 커프럴의 삽입 손실은 최대 손실이 19.2dB 이하였고 균일성은 2dB이였다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 춘계학술대회
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• pp.367-370
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• 2015

본 논문은 자동차 자율주행에 필요한 신호등 신호의 검출 성능을 개선시키는 방법을 제안한다. 일반적인 교통신호등 검출연구는 색상 임계치, 템플릿 매칭, 학습기 기반 등의 방법을 사용한다. 그러나 조도 차이로 인한 인식률 저하와 느린 처리속도 문제가 있다. 제안한 방법은 형태학적 전처리 후 검출마스크를 통해 교통신호등 영역검출 및 인식을 제안한다. 먼저 영상을 조도에 강건하게 하기 위해 입력 영상을 YCbCr로 변환하고, Y채널에서 수평에지 성분을 추출한다. 그 후 신호등의 형태학적 특징을 이용하여 영역을 검출한다. 마지막으로 색상을 이용하여 신호등을 검출한다. 제안 방법을 다양한 환경에서 적용하여 기존 알고리즘보다 검출율과 처리 속도가 향상되었음을 확인하였다.

• 복식
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• 제53권1호
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• pp.1-15
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• 2003

This study as one of a series of systematic studies about dancing costumes will compare the costumes of the middle age with their normal style of dress. In brief, this study wants people to know about middle a9e dancing costumes and understand the culture in the middle ages. It was found that people's everyday clothes in the middle age such as Surcot. Surcot-ouvert, Pourpoint, Houppelande were used as dancing costumes. They were, however. changed from the public's clothes which were tight and long. Rather than wearing costume over others. dancers wore costumes which had slits on skirt or sleeves to increase motion. With the Wild Man of the Wood's which only nobles used for their dancing costumes. costumers highlighted the beauty of human body There were various costume materials used in the middle ages like silk. cotton fabrics, linen or brocade. These materials were used for Surcot and Pourpoint as dancing costumes. The naturalness of nature or geometric patterns also was expressed on the costumes. Further about those patterns, because the development of stained glass, vivid colors were used especially red, light green, blue etc. As for the hair styles used, dancers let their hair down and put a jeweled crown over their hair. In summation. dancers wore the same clothes that normal People did, but the costumes were different depending on social status and gender. The costumes of ordinary people's were based upon ordinary clothes that moved and emphasized the dynamic motion. On the other side, the court dancers' costumes were very fancy. symbolizing a measurement of nobles' from wealth and authority. as well as an expression of a sense of beauty, The main features of middle ages follows. : To emphasize vitality, there were long slits on the side of skirt. Hair decorations and jewels are more used than in the ancient age's. To hide a dancer's social status. they could use a mask. Wild Man of the Wood's was used for the body makeup. All these features of the dancing costumes must contribute to the progress of the dance in the middle age's.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.95-95
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• 2014

An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.