• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 한국재료학회지
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• 제14권6호
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• pp.399-401
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• 2004

InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 융합신호처리학회논문지
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• 제2권1호
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• pp.53-62
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• 2001

조명 및 반사광의 성질에 의해 블러링이 발생하고 이런 영상을 인식하는 경우 정확한 에지 검출이 어렵게 된다. 본 논문에서는 블러링된 영상에서 에지를 최적으로 검출하기 위해 일정하게 에지를 검출할 수 있는 가우시안 함수와 2차 미분 함수를 합성한 새로운 하이브리드 함수를 제안하고 실제 영상과 컨볼루션 한 후 함수의 local scale 계수 $\sigma$ 값을 변화시키면서, Canny 알고리즘의 방향성 에지 검출방법을 적용하여 에지를 검출하였다. 그 결과 Sobel, Robert, Canny 에지 검출방법보다 0.2~14㏈ 정도의 에지 검출특성이 개선됨을 확인하였다.

• 한국멀티미디어학회논문지
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• 제22권1호
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• pp.70-78
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• 2019

The smart festival costume developed in this study maximizes the design elements by attaching electronic device to clothing, and uses voice, movement, and light sensor to utilize as expression elements. In addition, as a way to maximize cultural exchanges between Korea and China, smart festival costume was developed by applying smart clothing technology to the traditional costumes of both countries. and it was exhibited for 10 days at the 'Andong International Mask Dance Festival 2018'. The smart festival costume has the effect of multiplying the dynamism and excitement of the festival by the use of colorful lighting and it has been evaluated that the experience of wearing traditional costume of both countries contributes greatly to promote international cultural exchange. However, since smart clothing is inconvenient to wear due to the use of electronic products, meticulous research for consumer safety is required for practical use. Smart devices is expected to utilize for the development of traditional culture resources and the fashion industry in the future.

• 한국광학회지
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• 제34권6호
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• pp.276-282
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• 2023

본 논문에서는 가격이 비싼 고보 조명을 대체하기 위해 freeform lens를 사용하여 조명 광학계를 설계하였다. Freeform lens 조명은 이미지 마스크를 사용하지 않으며, 렌즈 한 매만으로도 렌즈 면에서 직접 이미지를 형성하여 조사할 수 있어 고보 조명에 비해 단가를 절감할 수 있다. 또한 설계한 freeform lens 조명의 성능을 확인하기 위해서 조도 시뮬레이션을 진행하였다. 이를 통해 설계한 조명이 조사하고자 하는 이미지와 유사한 조도분포를 가지며, 고보 조명의 성능과 유사한 광효율 47%를 가지므로 고보 조명을 대체할 수 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• 한국정보전자통신기술학회논문지
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• 제10권3호
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• pp.249-255
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• 2017

지정맥 인식 기술은 손가락에 적외선 광을 조광하여 손가락에 있는 정맥 영상을 획득한 다음, 특징 추출, 매칭 등의 과정을 거쳐 개인을 인증하는 방법이다. 지정맥 인식을 위해 손가락 외각을 검출함에 있어 2차원 마스크(mask)를 기반한 2차원 컨볼루션(2-Dimension convolution) 처리방법은 저가(low cost)의 마이크로프로세서 또는 마이크컨트롤러에 적용할 때 많은 연산시간이 소요된다. 이러한 문제점을 개선하고 인식을 향상시키기 위해 본 연구에서는 2차원 마스크와 2차원 컨볼루션을 사용하지 않고 픽셀들 간의 차의 절대 값과 역치(threshold)를 기반을 둔 이동평균필터링, 가상의 코어점 기반한 ROI 추출법 등을 제안하였고, 제안된 방법의 성능을 평가하기 위해 600개 지정맥 영상을 사용하여 에지 추출속도와 ROI 영역 추출의 정확도 등을 기존의 방법들과 비교 평가 하였다. 그 결과, 제안된 방법의 처리속도가 기존의 방법보다 최소 2배 이상의 빠른 처리속도를 보였으며, ROI 추출의 정확도는 기존의 방법보다 6% 이상의 성능 향상을 보였다, 이러한 결과로부터 제안된 기법을 저가의 마이크로프로세서에 적용한다면, 빠른 처리속도로 높은 인식률을 제공할 것으로 판단된다.