• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.35-40
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• 2008

High performance light emitting diodes(LEDs) have been developed using GaN-based materials grown on sapphire substrates in recent years. Although these LEDs are already commercially available, we have to consider electrostatic discharge(ESD) damage related to both basic materials of diode and miniaturization of LEDs. ESD damage is one of the important parameters influencing reliability of the light emitting devices. We investigated mass production of GaN-based LEDs suffered from ESD during production process and present the solutions in order to improve the ESD problem. Most of EDS problems were controlled by using instruments properly and improvement of the process circumstances as well.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.7
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• pp.1-8
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• 2012

In this paper, we improved the light extraction efficiency by structural change of LEDs on conventional LEDs. We simulated the LEDs light emission as functions of LED side wall angle, various refractive indices the geometrical structures and analyzed the condition improved the light efficiency. We present the results of experimerns and simulations for light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. When the side wall angle range was from 40[$^{\circ}$] to 30[$^{\circ}$], the LED emission increased. LED side wall angle onto LED using the simulation system with a fine tuning of the structure of the LEDs side wall angle is fabricated. Additionally, we changed the side wall angle of LED package with spherical structure and flat structure. The result of spherical structure ray tracting is higher compared with flat structure about 14[%].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.444-447
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• 2019

It was proven that the light outputs of blue GaN-based light-emitting diodes (LEDs) was seriously influenced by the application of external stress. We have simulated the wave function overlap of an electron and hole, which are significantly reduced by the development of stress. Consequently, its internal quantum efficiency decreased from 67.0% to 37.5%. To experimentally investigate the effect of stress, we designed and prepared a special zig system. By applying external tensile stress to compensate for the compressive stress innately developed in Blue LEDs, it was found that the optical output was greatly enhanced from 83.1 mcd to 117.2 mcd at a current of 100 mA, an increase of approximately 41%. In contrast, when the compressive stress is developed more by external compressive stress, we observed that the light output power was reduced from 89.0 mcd to 80.7 mcd, a decrease of approximately 9.3%.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.280-280
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• 2014

We report the fabrication and electroluminescent characteristics of GaN/InxGa1-xN microdonut-shaped light-emitting diode (LED) microarrays as variable-color emitters. The diameter, width, height, and period of the GaN microdonuts were controlled by their growth parameters and the geometrical factors of the growth mask patterns. For the fabrication of microdonut LEDs, p-GaN/p-AlxGa1-xN/u-GaN/u-InxGa1-xN heteroepitaxial layers were coated on the entire surface of n-GaN microdonuts. The microdonut LED arrays showed strong light emission, which could be seen with the unaided eye under normal room illumination. Additionally, magnified optical images of microdonut LED arrays exhibited microdonut-shaped light emissions having spatially resolved blue and green colors. Their electroluminescence spectra had two dominant peaks at 460 and 560 nm. With increasing applied voltage, the intensity of the blue emission peak increased much faster than that of the green emission peak, indicating that the color of the LEDs is tunable. We also demonstrated that EL spectra of the devices could be controlled by changing the size of microdonut LEDs. What we want to emphasize here with the microdonut LEDs is that they have additional inner sidewall facets which did not exist for other typical three-dimensional structures including nanopyramids and nanorods, and that InxGa1-xN single quantum well formed on the inner sidewall facets had unique thickness and chemical composition, which generated additional EL color. The origin of the electroluminescence peaks was investigated by structural characterizations and chemical analyses.

• Journal of Applied Reliability
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• v.10 no.2
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• pp.137-148
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• 2010

This study deals with the accelerated life test of high power phosphor converted white Light Emitting Diodes (High power LEDs). Samples were aged at $110^{\circ}C$/85% RH and $130^{\circ}C$/85% RH up to 900 hours under non-biased condition. The stress induced a luminous flux decay on LEDs in all the conditions. Aged devices exhibited modification of package silicon color from white to yellowish brown. The instability of the package contributes to the overall degradation of optical lens and structural degradations such as generating bubbles. The degradation mechanisms of lumen decay and reduction of spectrum intensity were ascribed to hygro-mechanical stress which results in package instabilities.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.50 no.4
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• pp.542-550
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• 2014

We investigated biomass, diatom species and fucoxanthin contents as cell growth, fatty acid and amino acid contents as nutritional composition of diatoms attached on plate to confirm effects of light emitting diodes (LEDs) due to block off natural light. In the single LED irradiation, biomass showed significantly higher to $30.0{\pm}6.48mg/m^2$ in white LED than that of others (P<0.05). The dominate diatom species was Navicula cancellata. Their lipid contents showed significantly higher to $112.9{\pm}19.23ug/mg$ dry matter (DM) in control than that of others LEDs. But eicosapetaenoic acid (EPA) contents showed significantly higher to $3.3{\pm}0.62ug/mg$ DM than others, but not significantly differed with natural control light treatment (P<0.05). And total protein contents are higher in control and blue LED light than that of others, but essential amino acid contents showed significantly higher to $3.2{\pm}4.8%$ in control (P<0.05). In mixing light with natural and LED light, biomass showed $2.6{\pm}0.22mg/m^2$ in blue LED (P<0.05). Fatty acids contents were not significantly differed with all treatments. Amino acid contents showed to $11.0{\pm}0.33ug/mg$ DM in white LED (P<0.05), but not significantly differed with others LED lights (P>0.05). Therefore, we could suggest that irradiation of blue LED in natural light very benefit to diatom culture for larvae of sea cucumber and abalone and do on.

• Journal of the Optical Society of Korea
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• v.20 no.2
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• pp.276-282
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• 2016

A 2 Gbit/s visible-light communication (VLC) scheme using time-frequency color-clustered (TFCC) multiple-input multiple-output (MIMO) based on blue, cyan, yellow, and red (BCYR) light-emitting diodes (LEDs) is presented. In the proposed scheme, BCYR LEDs are employed to form four different color clusters. Data transmission using the four color clusters is performed in MIMO, so that the scheme achieves a very high speed of data transmission. Moreover, the scheme employs the TFCC strategy to yield high performance in terms of bit error rate (BER). TFCC operates in such a way that the original data and the two delayed versions of the data are multiplied by orthogonal frequencies and then transmitted using a specific color of the BCYR LED. In the receiver, color filters are employed to detect the data transmitted from the desired cluster. Selection combining (SC) is also performed to yield a diversity effect within each color cluster, to further improve the performance. Performance evaluation demonstrates that the proposed TFCC MIMO VLC offers a data rate of 2 Gbit/s and a bit error rate of 4×10^-5, at an E_b/N_o value of merely 3 dB.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2001.02a
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• pp.160-166
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• 2001