• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.185-192
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• 2012

p-n junction temperature and thermal resistance of Light Emitting Diode (LED) package are affected by the chip size due to the change of the thermal density and the external quantum efficiency considering the heat dissipation through conduction. In this study, forward voltage was measured for two different size LED chips, 24 mil and 40 mil, which consist constitute 16-chip package. p-n junction temperature and thermal resistance were determined by thermal transient analysis, which were discussed in connection with the electrical characteristics of the LED chip and the structure of the LED package.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.22-26
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• 2013

The author analyzes the luminous efficiency of the phosphor-conversion white light-emitting diode (LED) that consists of a blue LED chip and a yellow phosphor. A theoretical model is derived to find the relation between luminous efficiency (LE) of a white LED, wall-plug efficiency (WPE) of a blue LED chip, and the phosphor absorption ratio of blue light. The presented model enables to obtain the theoretical limit of LE and the lower bound of WPE. When the efficiency model is applied to the measured results of a phosphor-conversion white LED, the limit theoretical value of LE is obtained to be 261 lm/W. In addition, for LE of 88 lm/W at 350 mA, the lower bound of WPE in the blue LED chip is found to be ~34%. The phosphor absorption ratio of blue light was found to have an important role in optimizing the luminous efficiency and colorimetric properties of phosphor-conversion white LEDs.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1290-1296
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• 2013

The light intensity which represents the relative amount of brightness and darkness is very important feature to discern the color hue and its relevant information. With this aim, we devise a new optical system and method to analyze the light intensity. Our suggested system including a phototransistor and white-high-brightness chip light-emitting diode intend estimate the contrast value utilizing Image Research Institute(I.R.I.) Hue & Tone samples which includes 120 color sheets arranged by the color hue and tone. As a result, we confirmed that the brightness of the color checker can be accurately estimated by a high-brightness light-emitting-diode optical system.

• ETRI Journal
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• v.26 no.5
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• pp.509-511
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• 2004

This paper describes a novel current driving circuit for an active matrix organic light emitting diode (AMOLED). The proposed current driving circuit has a lower power consumption and higher chip density for the AMOLED display compared with the conventional one because all elements operate at a normal voltage and are shielded from the high voltage of the panel. The chip size and power consumption of the current driving circuit for an AMOLED can be improved by about 30 to 40% and 10 to 20%, respectively, compared with the conventional one.

• Journal of the Korean institute of surface engineering
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• v.40 no.2
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• pp.103-106
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• 2007

We have investigated the optical and electrical properties of surface mounted white light emitting diode (LED) chips prepared by using yellow phosphors on the blue LED chip. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ratio of epoxy:yellow phosphor = 97:3 wt%. The maximum luminance and light emitting efficiency are above $80,000cd/m^2$ and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The current of the white LED chip is about 30 mA at 2.9 V.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.311-316
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• 2015

We investigate the temperature dependence of the phosphor conversion efficiency (PCE) of the phosphor material used in a white light-emitting diode (LED) consisting of a blue LED chip and yellow phosphor. The temperature dependence of the wall-plug efficiency (WPE) of the blue LED chip and the PCE of phosphor are separately determined by analyzing the measured spectrum of the white LED sample. As the ambient temperature increases from 20 to $80^{\circ}C$, WPE and PCE decrease by about 4.5% and 6%, respectively, which means that the contribution of the phosphor to the thermal characteristics of white LEDs can be more important than that of the blue LED chip. When PCE is decomposed into the Stokes-shift efficiency and the phosphor quantum efficiency (QE), it is found that the Stokes-shift efficiency is only weakly dependent on temperature, while the QE decreases rapidly with temperature. From 20 to $80^{\circ}C$ the phosphor QE decreases by about 7% while the Stokes-shift efficiency changes by less than 1%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.377-377
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• 2007

A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.19-23
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• 2014

For the application of light-emitting diodes (LEDs) for general illumination, the development of high power LEDs chips became more essential. For these reasons, recently, modified vertical LEDs have been developed to meet various requirements such as better heat dissipation, higher light extraction and less cost of production. In this research, we investigate the effect of Size and Array of N-GaN contact on operation voltage with new structured padless vertical LED. We changed the size and array of N-electrodes and investigated how they affect the operation voltage of LEDs. We simulated the current crowding and expected operation voltage for different N-contact structures with commercial LED simulator. Also, we fabricated the padless vertical LED chips and measured the electrical property. From the simulation, we could know that the larger size and denser array of n-electrodes could make operation voltage decrease. These results are well in accordance with those measured values of real padless vertical LED chips.

• Current Optics and Photonics
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• v.1 no.6
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• pp.626-630
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• 2017

GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.44.2-44.2
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• 2007