• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.214-220
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• 2013

Hydrophobic coating on a silicate-based yellow phosphor ($Sr_2SiO_4:Eu^{2+}$) was carried out by using hexamethyldisiloxane (HMDSO) precursor in an atmospheric pressure dielectric barrier discharge plasma reactor, eventually to improve the long-term stability and reliability of the phosphor. The phosphor powder samples were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM), a fluorescence spectrophotometer and a contact angle analyzer. After the coating was prepared, the contact angle of the phosphor powder increased to $133.0^{\circ}$ for water and to $140.5^{\circ}$ for glycerol, indicating that a hydrophobic layer was formed on its surface. The phosphor coated with HMDSO exhibited photoluminescence enhancement up to 7.8%. The SEM and TEM images of the phosphor powder revealed that the plasma coating led to a morphological change from grain-like structure to smooth surface with 31~46 nm thick hydrophobic layer. The light emitting diode (3528 1 chip LED) fabricated with the coated phosphor showed a substantial enhancement in the reliability under a special test condition at $85^{\circ}C$ and 85% relative humidity for 1,000 h (85/85 testing). The plasma-mediated method proposed in this work may be applicable to the formation of 3-dimensional coating layer on irregular-shaped phosphor powder, thereby improving the reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Korean Journal of Environmental Agriculture
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• v.34 no.1
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• pp.38-45
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• 2015

BACKGROUND: For commercial production of greenhouse crops under shorter day length condition, supplementary radiation has been usually achieved by the artificial light source with higher electric consumption such as high-pressure sodium, metal halide, or incandescent lamps. Light-Emitting Diodes (LEDs) with several characteristics, however, have been considered as a novel light source for plant production. Effects of supplementary lighting provided by the artificial light sources on growth of Kale seedlings during shorter day length were discussed in this experiment. METHODS AND RESULTS: Kale seedlings were grown under greenhouse under the three wave lamps (3 W), sodium lamps (Na), and red LEDs (peak at 630 nm) during six months, and leaf growth was observed at intervals of about 30 days after light exposure for 6 hours per day at sunrise and sunset. Photosynthetic photon flux (PPF) of supplementary red LEDs on the plant canopy was maintained at 0.1 (RL), 0.6 (RM), and $1.2(RH){\mu}mol/m^2/s$ PPF. PPF in 3 W and Na treatments was measured at $12{\mu}mol/m^2/s$. Natural light (NL) was considered as a control. Leaf fresh weight of the seedlings was more than 100% increased under the 3 W, Na and RH treatment compared to natural light considering as a conventional condition. Sugar synthesis in Kale leaves was significantly promoted by the RM or RH treatment. Leaf yield per $3.3m^2$ exposed by red LEDs of $1.2{\mu}mol/m^2/s$ PPF was 9% and 16% greater than in 3W or Na with a higher PPF, respectively. CONCLUSION: Growth of the leafy Kale seedlings were significantly affected by the supplementary radiation provided by three wave lamp, sodium lamp, and red LEDs with different light intensities during the shorter day length under greenhouse conditions. From this study, it was suggested that the leaf growth and secondary metabolism of Kale seedlings can be controlled by supplementary radiation using red LEDs of $1.2{\mu}mol/m^2/s$ PPF as well as three wave or sodium lamps in the experiment.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• Journal of Korean Dental Science
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• v.8 no.2
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• pp.49-56
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• 2015

Purpose: The effect of accelerated aging on color stability of various dual-cured self-adhesive resin cements were evaluated in this study. Materials and Methods: Color stability was examined using three different brands of dual-cured self-adhesive resin cements: G-CEM LinkAce (GC America), MaxCem Elite (Kerr), and PermaCem 2.0 (DMG) with the equivalent color shade. Each resin cement was filled with Teflon mold which has 6 mm diameter and 2 mm thickness. Each specimen was light cured for 20 seconds using light emitting diode (LED) light curing unit. In order to evaluate the effect of accelerated aging on color stability, color parameters (Commission Internationale de l'Eclairage, CIE $L^*$, $a^*$, $b^*$) and color differences (${\Delta}E^*$) were measured at three times: immediately, after 24 hours, and after thermocycling. The $L^*$, $a^*$, $b^*$ values were analyzed using Friedman test and ${\Delta}E^*$ values on the effect of 24 hours and accelerated aging were analyzed using t-test. These values were compared with the limit value of color difference (${\Delta}E^*=3.7$) for dental restoration. One-way ANOVA and Scheff's test (P<0.05) were performed to analyze each ${\Delta}E^*$ values between cements at each test period. Result: There was statistically significant difference in comparison of color specification ($L^*$, $a^*$, $b^*$) values after accelerated aging except $L^*$ value of G-CEM LinkAce (P<0.05). After 24 hours, color difference (${\Delta}E^*$) values were ranged from 2.47 to 3.48 and $L^*$ values decreased and $b^*$ values increased in all types of cement and MaxCem Elite had high color stability (P<0.05). After thermocycling, color change's tendency of cement was varied and color difference (${\Delta}E^*$) values were ranged from 0.82 to 2.87 and G-CEM LinkAce had high color stability (P<0.05). Conclusion: Color stability of dual-cured self-adhesive resin cements after accelerated aging was evaluated and statistically significant color changes occurred within clinically acceptable range.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.420-424
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• 2016

In this study, we developed photocatalytic technology to address the emerging serious problem of air pollution through indoor air cleaning. A single layer of $WO_3$ was prepared by using the dry process of general RF magnetron sputtering. At a base vacuum of $1.8{\times}10^{-6}$[Torr], the optical and electrical properties of the resulting thin films were examined for use as a transparent electrode as well as a photocatalyst. The single layer of $WO_3$ prepared at an RF power of 100 [W], a pressure of 7 [mTorr] and Ar and $O_2$ gas flow rates of 70 and 2 sccm, respectively, showed uniform and good optical transmittance of over 80% in the visible wavelength range from 380 [nm] to 780 [nm]. The optical catalyst characteristics of the $WO_3$ thin film were examined by investigating the optical absorbance and concentration variance in methylene blue, where the $WO_3$ thin film was immersed in the methylene blue. The catalytic characteristics improved with time. The concentration of methylene blue decreased to 80% after 5 hours, which confirms that the $WO_3$ thin film shows the characteristics of an optical catalyst. Using the reflector of a CCFL (cold cathode fluorescent lamp) and the lens of an LED (lighting emitting diode), it is possible to enhance the air cleaning effect of next-generation light sources.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.97-105
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• 2017

An air-burst munition is limited in space, so there is a limit on the size of the fuze and the amount of ammunition. In order to increase a firepower to a target with limited ammunition, it is necessary to concentrate the firepower on the ground instead of the omnidirectional explosion after flying to the target. This paper explores the design and verification of a ground-detection sensor that detects the direction of the ground and determines the flight-distance of an air-burst munition using a single axis geomagnetic sensor. Prior to the design of the ground detection sensor, a geomagnetic sensor model mounted on the spinning air-burst munition is analyzed and a ground-detection algorithm by simplifying this model is designed. A high speed rotating device to simulate a rotation environment is designed and a geomagnetic sensor and a remote-recording system are fabricated to obtain geomagnetic data. The ground detection algorithm is verified by post-processing the acquired geomagnetic data. Taking miniaturization and low-power into consideration, the ground detection sensor is implemented with analog devices and the processor. The output signal of the ground detection sensor rotating at an arbitrary rotation speed of 200 Hz is connected to the LED (Light Emitting Diode) in the high speed rotating device and the ground detection sensor is verified using a high-speed camera.

• The Journal of the Korea Contents Association
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• v.13 no.2
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• pp.314-321
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• 2013

Photodynamic therapy(PDT) has been recommended as an alternative therapy for various diseases including microbial infection. The aim of the present study is to evaluate the antimicrobial effect of PDT using a photofrin and home made 630 nm Light emitting diode(LED) against Staphylococci. To examine the antimicrobial effect of photofrin-mediated PDT against Staphylococcus aureus and Staphylococcus epidermidis colony forming units(CFU) quantification, and bacterial viability using flow cytometry were formed. The CFU quantification results of S. aureus and S. epidermidis were 1 cfu/ml and 16 cfu/ml of average, respectively, after PDT application with photofrin of $50{\mu}g/m{\ell}$ and 630 nm LED and energy density of $18J/cm^2$. In addition, S. aureus and S. epidermidis isolates yielded forward-scatter (FSC) and fluorescence intensity (FI) differences on flow cytometry (FCM) after PDT. S. aureus and S. epidermidis cell size(FSC) increased 8.96% and 5.55% respectively, after PDT. Also the numbers of dead cell of S. aureus and S. epidermidis were a 39% and 61% incerased. These results suggest that photofrin-mediated PDT can be an effective alternative treatment for antibacterial therapy.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.17-22
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• 1999

Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.125-125
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• 2010

극성 [0001] 방향으로 성장된 질화물 기반의 LED (light emitting diode) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE)에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 InGaN/GaN이나 AlGaN/GaN 양자 우물구조를 GaN의 m-plane (1$\bar{1}$00) 이나 a-plane (11$\bar{2}$0) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성 면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. GaN 층의 표면을 평탄화하고 결정성을 향상시키기 위해서 저온 GaN 또는 AlN 버퍼층을 성장하는 2단계 방법이나 고온 버퍼층을 이용하여 성장하는 연구들이 많이 진행되고 있다. 본 연구에서는 고온 GaN 버퍼층을 이용하여 기존의 2단계 성장과정을 단순화한 비극성 a-plane GaN을 r-plane 사파이어 기판위에 유기금속 화학증착법 (MOCVD)으로 성장하였다. 사파이어 기판위에 AlN 층을 형성하기 위한 nitridation 과정 후 1030 도에서 두께 45 ~ 800 nm의 고온 GaN 버퍼층을 성장하고 총 박막 두께가 2.7 ~ 3 um 가 되도록 a-plane GaN을 성장하여 표면 양상의 변화와 결정성을 확인하였다. 또한 a-plane GaN 박막 성장 시에 성장 압력을 100 ~ 300 torr 로 조절하며 박막 성장의 변화 양상을 관찰하였다. 고온 GaN 버퍼층 성장 두께가 감소함에 따라 결정성은 증가하였으나 표면의 삼각형 형태의 pit 밀도가 증가함을 확인하였다. 또한 성장 압력이 감소함에 따라 표면 pit은 감소하였으나 결정성도 감소하는 것을 확인하였다. 성장 압력과 버퍼층 성장 두께를 조절하여 표면에 삼각형 형태의 pit이 존재하지 않는 RMS roughness 0.99 nm, 관통전위밀도 $1.78\;{\times}\;10^{10}/cm^2$, XRD 반가폭이 [0001], [1$\bar{1}$00] 방향으로 각 798, 1909 arcsec 인 a-plane GaN을 성장하였다. 이 연구를 통해 고온 GaN 버퍼 성장방법을 이용하여 간소화된 공정으로 LED 소자 제작에 사용할 수 있는 결정성 높은 a-plane GaN을 성장할 수 있는 가능성을 확인하였다.