• 제목/요약/키워드: Light dependent

검색결과 825건 처리시간 0.023초

Numerical Modeling and Simulations of Electrical Characteristics of Multi-layer Organic Light Emitting Diodes

  • Lee, Hyun-Jung;Lee, Yong-Soo;Park, Jae-Hoon;Choi, Jong-Sun
    • Journal of Information Display
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    • 제8권3호
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    • pp.11-16
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    • 2007
  • Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J-V characteristics of the multi-layer organic light emitting diodes are carried out. Drift-diffusion current transport, field-dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.

Effect of Ag Capping Layer on the Emission Characteristics of Transparent Organic Light-emitting Devices with Ca/Ag Double-layer Cathodes

  • Lee, Chan-Jae;Moon, Dae-Gyu
    • Transactions on Electrical and Electronic Materials
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    • 제15권1호
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    • pp.45-48
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    • 2014
  • We have investigated the effects of an Ag capping layer on the emission characteristics of transparent organic light-emitting devices with Ca/Ag double-layer cathodes. The thickness of the Ag layer was varied from 10 to 30 nm, whereas the Ca was fixed to be a 10 nm in the Ca/Ag structure. The luminance and current efficiency on the cathode and anode sides are significantly dependent on the Ag thickness. For example, the current efficiency on the anode side increases from 8.4 to 11.7 cd/A, whereas, on the cathode side, it decreases from 3.2 to 0.2 cd/A as the Ag thickness increases from 10 to 30 nm. These changes in emission characteristics were investigated by measuring electroluminescence, transmission, and reflection spectra.

$ITO/TPD/Alq_3/Al$ 유기발광소자의 등가회로 분석 (Equivalent-Circuit Analysis of Organic Light-Emitting Diodes in $ITO/TPD/Alq_3/Al$)

  • 안준호;오용철;홍진웅;이준웅;송민종;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.188-191
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    • 2004
  • We have investigated equivalent-circuit analysis of organic light-emitting diodes in $ITO/TPD/Alq_3/Al$. Complex impedance Z of the device was measured in the frequency range of $40Hz{\sim}1MHz$. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with two parallel combination of $R_{TPD},\;C_{TPD}\;and\;R_{Alq3},\;C_{Alq3}$.

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유기발광 소자의 전자 주입층 두께 변화에 따른 발광효율 연구 (Study of OLED luminescence efficiency by electron Injection layer change)

  • 이정호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.555-558
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    • 2004
  • The efficiency of electron injection from the cathode is strongly dependent on the thickness of the LiF buffer-layer. We used LiF to electron Injection layer. We compared characteristics of organic light emitting device changing LiF thin film thickness from 1.0 m to 10.0 nm. Experiment result, we found that LiF thickness has the optimized electrical characteristics in 3.0 m. In this paper, we did research about electrical characteristics of organic light emitting device by LiF thickness change using method numerical analysis method. We proved adequate experimental results that compare results of numerical analysis, and come out through an experiment results is validity.

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Improved Photoluminescence from Light-Emitting Silicon Material by Surface Modification

  • 김동일;이치우
    • Bulletin of the Korean Chemical Society
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    • 제16권11호
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    • pp.1019-1023
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    • 1995
  • A light-emitting silicon material was prepared by electrochemical etching of n-Si single crystal wafers in a solution of hydrofluoric acid and ethanol. Visible photoluminescence from the silicon was inhomogeneous and decayed rapidly in the ambient laboratory conditions or with photoirradiation. Substantial improvements in photoluminescence which include little-dependent luminescence peak energy with excitation energy variation and longer-lasting room temperature visible photoluminescence were achieved when the surface of photoluminescent silicon material was derivatized with the surface modifier of octadecylmercaptan. Surface modification of the photoluminescent silicon was evidenced by the measurements of contact angles of static water drops, FT-IR spectra and XPS data, in addition to changed photoluminescence. Similar improvements in photoluminescence were observed with the light-emitting silicon treated with dodecylmercaptan, but not with octadecane. The present results indicate that sulfurs of octadecylmercaptans or dodecylmercaptans appear to coordinate the surface Si atoms of LESi and perturb the surface states to significantly change the luminescent characteristics of LESi.

Analysis of the Temperature Dependence of Phosphor Conversion Efficiency in White Light-Emitting Diodes

  • Ryu, Guen-Hwan;Ryu, Han-Youl
    • Journal of the Optical Society of Korea
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    • 제19권3호
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    • pp.311-316
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    • 2015
  • We investigate the temperature dependence of the phosphor conversion efficiency (PCE) of the phosphor material used in a white light-emitting diode (LED) consisting of a blue LED chip and yellow phosphor. The temperature dependence of the wall-plug efficiency (WPE) of the blue LED chip and the PCE of phosphor are separately determined by analyzing the measured spectrum of the white LED sample. As the ambient temperature increases from 20 to $80^{\circ}C$, WPE and PCE decrease by about 4.5% and 6%, respectively, which means that the contribution of the phosphor to the thermal characteristics of white LEDs can be more important than that of the blue LED chip. When PCE is decomposed into the Stokes-shift efficiency and the phosphor quantum efficiency (QE), it is found that the Stokes-shift efficiency is only weakly dependent on temperature, while the QE decreases rapidly with temperature. From 20 to $80^{\circ}C$ the phosphor QE decreases by about 7% while the Stokes-shift efficiency changes by less than 1%.

Temperature Dependence of Efficiency Droop in GaN-based Blue Light-emitting Diodes from 20 to 80℃

  • Ryu, Guen-Hwan;Seo, Dong-Joo;Ryu, Han-Youl
    • Current Optics and Photonics
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    • 제2권5호
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    • pp.468-473
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    • 2018
  • We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.

Surface-Plasmon Assisted Transmission Through an Ultrasmall Nanohole of ~ 10 nm with a Bull's Eye Groove

  • Kim, Geon Woo;Ko, Jae-Hyeon;Park, Doo Jae;Choi, Seong Soo;Kim, Hyuntae;Choi, Soo Bong
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1698-1702
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    • 2018
  • We simulate the light transmission through an extremely small nanoscale aperture having a 10 nm diameter punctured in a metal film positioned at the center of a plasmonic bull's eye grating. A considerable directive emission of transmitted light with a divergence angle of 5.7 degrees was observed at $10{\mu}m$ from the nanohole opening at the frequency of surface plasmon polariton excitation, an confirmed by measuring the distance dependent transmission amplitude. Observations of the electric field in cross-sectional, near-field, and far-field views near-field enhancement associated with the surface plasmon excitation, and the interference of the electric field light through the nanohole in the near-field region is responsible for such a considerable directive emission.

Temperature-dependent dielectric relaxation in ITO/Alq3/Al organic light-emitting diodes

  • Ahn, Joonho;Kim, Tae Wan;Lee, Won Jae
    • Journal of Ceramic Processing Research
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    • 제13권spc2호
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    • pp.163-165
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    • 2012
  • Impedance spectroscopy informs electrical properties of materials as accumulated charges, contact status between electrode and organic materials. We carried out impedance spectroscopy of organic light-emitting diodes as ITO/Alq3(60 nm)/Al on temperatures from 10 K to 300 K. The result described Z'-Z" plot, cole-cole plot and dielectric relaxation time τ. Z'-Z" plot means that real and imaginary part of materials in organic and electrode by frequencies and temperature. Z' as real part of impedance by applied frequency depending on temperature shows the plateau in low frequency region as Rs+ Rp and over 100 kHz in high frequency region as Rs. Cole-cole plot shows resistance of materials in equivalent circuit of the device by temperatures. And equivalent circuit and dielectric relaxation could be accomplished by using the complex impedance analysis.

Inhibition of Cell Growth and Mitochondrial Activity in Human Gingival Fibroblasts by LED-Generated Red Light Exposure

  • Kim, Hee-Jeong;Hwang, Jung-Min;Kwak, So-Yeong;Kim, Jong-Ghee;Jeon, Young-Mi;Lee, Jeong-Chae
    • International Journal of Oral Biology
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    • 제34권4호
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    • pp.185-190
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    • 2009
  • This study examined the effects of red light generated from a light emitting diode (LED) upon proliferation and mitochondrial stress in human gingival fibroblasts (hGFs). Cells were exposed to LED-generated red light at a clinically relevant intensity and distance with a 610-630 nm wavelength for various times (0-48 min). At different exposure times, cells were processed for the analysis of succinate dehydrogenase (SDH) activity, proliferation, mitochondrial membrane potential (MMP) and cytotoxicity. Cell cycle progression was also investigated by flow cytometry after staining with propidium iodide. Red light exposure was found to inhibit SDH activity and DNA synthesis in hGFs in a time-dependent manner. Light exposure also reduced the MMP levels in these cells and this was closely associated with a $G_0/G_1$ arrest. In contrast, exposure of hGFs to red light for 48 min led to a dramatic loss of MMP with an attendant increase in cytotoxicity. These findings demonstrate that LED-generated red light may cause mitochondrial stress and growth inhibition in hGFs during tooth whitening therapy, depending on the length of the exposure.