• Title/Summary/Keyword: Light Metal

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Study of Plasma Process Induced Damages on Metal Oxides as Buffer Layer for Inverted Top Emission Organic Light Emitting Diodes

  • Kim, Joo-Hyung;Lee, You-Jong;Jang, Jin-Nyoung;Song, Byoung-Chul;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.543-544
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    • 2008
  • In the fabrication of inverted top emission organic light emitting diodes (ITOLEDs), the organic layers are damaged by high-energy plasma sputtering process for transparent top anode. In this study, the plasma process induced damages on metal oxide hole injection layers (HILs) including $WO_3$, $MoO_3$, and $V_2O_5$ as buffer layer are examined. With the result of IV characteristic of hole-only devices, we propose that $MoO_3$ and $V_2O_5$ are stable materials against plasma sputtering process.

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Metal work function dependent photoresponse of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) (금속(Al, Cr, Ni)의 일함수를 고려한 쇼트키 장벽 트랜지스터의 전기-광학적 특성)

  • Jung, Ji-Chul;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.355-355
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    • 2010
  • We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of ${\sim}10^7$ than others. In addition, extensive photoresponse analysis has been performed using halogen and deuterium light sources(200<$\lambda$<2000nm).

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Neodymium doped mixed metal oxide derived from CoAl-layered double hydroxide: Considerable enhancement in visible light photocatalytic activity

  • Khodam, Fatemeh;Amani-Ghadim, Hamid Reza;Aber, Soheil;Amani-Ghadim, Ali Reza;Ahadzadeh, Iraj
    • Journal of Industrial and Engineering Chemistry
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    • v.68
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    • pp.311-324
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    • 2018
  • Herein,the Neodymium ion ($Nd^{3+}$) doped CoAl-LDH have been successfully prepared via co-precipitation method and was used as a precursor of Nd-doped CoAl-mixed metal oxides (MMO). The photocatalytic activity of doped LDH and MMO was investigated in the degradation of an azo dye, C.I. Acid Red 14, under visible light irradiation. DRS and PL analysis demonstrated decreasing in the band gap energy and recombination of photo-induced charge carriers of Nd-doped LDH and MMO compared with the pristine CoAL-LDH. Due to significant difference in photocatalytic performance. A power law empirical kinetic model was obtained for predicting the photocatalytic degradation efficiency.

Development of multi-cell flows in the three-layered configuration of oxide layer and their influence on the reactor vessel heating

  • Bae, Ji-Won;Chung, Bum-Jin
    • Nuclear Engineering and Technology
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    • v.51 no.4
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    • pp.996-1007
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    • 2019
  • We investigated the influence of the aspect ratio (H/R) of the oxide layer on the reactor vessel heating in three-layer configuration. Based on the analogy between heat and mass transfers, we performed mass transfer experiments to achieve high Rayleigh numbers ranging from $6.70{\times}10^{10}$ to $7.84{\times}10^{12}$. Two-dimensional (2-D) semi-circular apparatuses having the internal heat source were used whose surfaces of top, bottom and side simulate the interfaces of the oxide layer with the light metal layer, the heavy metal layer, and the reactor vessel, respectively. Multi-cell flow pattern was identified when the H/R was reduced to 0.47 or less, which promoted the downward heat transfer from the oxide layer and possibly mitigated the focusing effect at the upper metallic layer. The top boundary condition greatly affected the natural convection of the oxide layer due to the presence of secondary flows underneath the cold light metal layer.

Driving Method with Variable Integration Time for Ambient Light Sensing Circuit

  • Lim, Han-Sin;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1495-1498
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    • 2008
  • We proposed driving method with variable integration time for ambient light sensing. One operation period of the proposed driving method consists of several sub-integration periods with variable integration time which can enlarge dynamic range of ambient light sensing circuit. Temperature dependent characteristic of p-intrinsic-metal (p-i-m) diode can be compensated using the proposed driving method.

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Dynamics of RNA Bacteriophage MS2 Observed with a Long-Lifetime Metal-Ligand Complex

  • Kang, Jung Sook;Yoon, Ji Hye
    • Journal of Photoscience
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    • v.11 no.1
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    • pp.35-40
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    • 2004
  • [Ru(2,2'-bipyridine)$_2$(4,4'-dicarboxy-2,2'-bipyridine)]$^{2+}$(RuBDc) is a very photostable probe that possesses favorable photophysical properties including long lifetime, high quantum yield, large Stokes' shift, and highly polarized emission. To evaluate the usefulness of this luminophore (RuBDc) for studying macromolecular dynamics, its intensity and anisotropy decays when conjugated to RNA bacteriophage MS2 were examined using frequency-domain fluorometry with a high-intensity, blue light-emitting diode (LED) as the modulated light source. The intensity decays were best fit by a sum of two exponentials, and the mean intensity decay time was 442.2 ns. The anisotropy decay data showed a single rotational correlation time (2334.9 ns), which is typical for a spherical molecule. The use of RuBDc enabled us to measure the rotational correlation time up to several microseconds. These results indicate that RuBDc can be useful for studying rotational diffusion of biological macromolecules.s.

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Advanced Pixel Structure for Higher Aperture Ratio in TFT-LCD

  • Kim, Jong-Hoon;Noh, Sang-Yong;Kang, Shin-Tack;Lee, Jong-Hwan;Choi, Kwang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.17-19
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    • 2008
  • An advanced TFT-LCD structure was proposed to increase aperture ratio (AR). In this structure, metal layers formed below the data lines are used as light-blocking layers, achieving higher AR ratio than that of a conventional structure. Since average misalignment between the metal light-blocking layers and pixel electrodes is smaller than that of black matrixes on color filter glass, substantially less light-blocking areas are needed to achieve misalignment margin. The AR of the LCD panel fabricated by using proposed structure was enhanced by 18.7 % over that of the conventionally structured panel.

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Physical Properties of Thin Metal Films -II (-Effect of Oxygen on Thin Metal Film Formation and Physical Properties- (금속박막의 물리적 성질 -II- -금속박막형성과 물성에 미치는 산소의 영향-=)

  • 이세경;박수현
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.7
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    • pp.791-798
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    • 1988
  • Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

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Metal-insulator Transition of VO2 Thin Films and Nanowires Induced Photo-excitation

  • Sohn, Ahrum;Kim, Haeri;Kim, Eunah;Kim, Dong-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.196.1-196.1
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    • 2014
  • VO2 exhibits metal-insulator transition (MIT), of which critical temperature (TC) is about 340 K. There have been many reports that MIT can be induced by UV light as well as heat. Clear mechanism regarding such photo-induced MIT has not been clarified. We have compared the MIT behaviors of VO2 thin film during heating-cooling cycles with and without light. We tried several light sources with different wavelengths (red, blue, and UV). Tc and hysteresis width of the resistance change were influenced by the illumination of the samples. We performed Kelvin probe force microscopy (KPFM) studies, which can reveal the evolution of the local sample work function. In this presentation, we will discuss possible physical origins for the photo-induced effects on the MIT behaviors of the VO2 samples.

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380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Bae, Sung-Bum;Kim, Sung-Bok;Kim, Dong-Churl;Nam, Eun Soo;Lim, Sung-Mook;Son, Jeong-Hwan;Jo, Yi-Sang
    • ETRI Journal
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    • v.35 no.4
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    • pp.566-570
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    • 2013
  • In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.