• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2333-2337
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• 2012

We report the synthesis and thermal annealing of Si-core/ZnO-shell nanorods using a two-step process comprising the metal-assisted electroless etching of Si and the sputter deposition of ZnO. Transmission electron microscopy and X-ray diffraction analysis showed that the cores of the annealed core-shell nanorods were single crystal diamond cubic-type Si, whereas the shells of the annealed core-shell nanorods were single crystal wurtzite-type ZnO. The PL spectra of Si nanorods consisted of a broad red emission band and a weaker blue emission band. The major emission band of Si nanorods was shifted from 700 nm (in the red region) to 440 nm (in the violet region) by ZnO coating. The violet emission of the core-shell nanorods was enhanced in intensity considerably by annealing in an oxidizing atmosphere. The origin of the PL enhancement by annealing is also discussed.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.10a
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• pp.307-311
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• 2002

This study was investigated the photoelectrochemical behavior of STS304 steel with $TiO_2$ thin films coating, applied by sol-gel method, for the purpose of cathodic photoprotection of the steel corrosion. One time $TiO_2$-coated STS304 steel adopted two kinds of $TiO_2$ sol solution has the most dominant photopotential abilities, which was -200mV vs. SCE and -500mV vs. SCE under illumination with 40W fluorescent lamp, respectively. That was more negative than the corrosion potential of the bare metal(-150 mV). The bleaching of TCE was confirmed on $TiO_2$-coated STS304 under UV-illumination with 20 W Black-light. This Study was concluded that $TiO_2$-coated STS304 exhibited both a cathodic photoprotection effect against corrosion and photocatalytic self-cleaning effect.

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.36-42
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• 2008

Carbon/$TiO_2$ composite photocatalysts were thermally synthesized with different mixing ratios of anatase to phenol resin through an ethanol solvent dissolving method. The XRD patterns revealed that only anatase phase can be identified for Carbon/$TiO_2$ composites. The diffraction peaks of carbon were not observed, however, due to the low carbon content on the $TiO_2$ surfaces and the low crystallinity of amorphous carbon. The results of chemical elemental analyses of the Carbon/$TiO_2$ composites showed that most of the spectra for these samples gave stronger peaks for carbon and Ti metal than that of any other elements. The BET surface area increases to the maximum value of $488\;m^2/g$ with the area depending on the amount of phenol resin. From the SEM images, small $TiO_2$ particles were homogeneously distributed to a composite cluster with the porosity of phenol resin-based carbon. From the photocatalytic results, the MB degradation should be attributed to the three kinds of synergetic effects, such as photocatalysis, adsorptivity, and electron transfer by light absorption between supporter $TiO_2$ and carbon.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.361-365
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• 2015

Vanadium dioxide ($VO_2$) of monoclinic phase exhibits Metal Insulator Phase Transition (MIPT) phenomenon involving a sharp change in electrical and optical properties at $68^{\circ}C$. Solution-based process is applied to form uniform $VO_2$ coating layer on ceramic tiles. This can selectively block the near-infrared light to possibly reduce the energy loss and prevent dew condensation caused by the temperature difference. Heat treatment conditions including temperature and dwell time were examined to obtain a monoclinic $VO_2$ single phase. Both rutile and monoclinic $VO_2$ phases were observed from in the tiles post-annealed below $700^{\circ}C$. Desired monoclinic $VO_2$ single phase was grown in the tiles heat treated at $750^{\circ}C$. Nano facets of irregular size were observed in the monoclinic $VO_2$ phase involving the phase-transition. Grain growth of monoclinic $VO_2$ phase was observed as a function of dwell time at $750^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2171-2175
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• 2011

The objective of this paper is to discuss technologies on assessing reliability of arc detectors by composing a system that generates and simulates occurrence of arc caused by loss of contact between pantographs and contact wires in a laboratory condition. In order to establish the arc simulator, a device that generates light having the bandwidth of arcs that occur between carbon-metal. The simulator was designed under conditions of EN 50317 and simulations were conducted using the developed device. According to the results, it was possible to conduct certification tests following regulations of international standards and the precision of the simulator was satisfactory. The proposed arc detector assessment system is expected to enhance precision of current collection quality performance assessment methods at high-speed lines and conventional lines while being referred as fundamental technologies for development of detectors suiting international conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.518-520
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• 1997

Recently, thiophene oligomer with short chain lengths has received much attention as model compounds for facilitating better understanding of electronic and optical properties of polymers, because oligomer is well-defined chemical systems and its conjugation chain length can be exactly controlled. Moreover, organic this films based on conjugated thiophene oligomer have potential for application to electronic and optoelectronic devices such as MISFETs(metal-insulator-semiconductor field-effect transistors) and LEDs(light-emitting diodes). However, there is little knowledge on electronic and structural properties of linear-conjugated oligothiophenes in solid states, compared with those in solutions. $\alpha$-sexithienyl($\alpha$-6T) thin-films were deposited by OMBD(Organic Molecular Beam Deposition) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The $\alpha$-6T films were deposited under various conditions. The effects of deposition rate, substrate temperature, and vacuum pressure on the formation of these films have been studied. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The $\alpha$-6T films deposited at an elevated substrate temperature showed higher conductivity than the film deposited at room temperature. Electrical characterization of these films will be also executed by using four-point probe measurement technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.31-34
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• 2004

During the last 20 years organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerine$(C_{60})$ as electron acceptor(A) with doped charge transport layers, $Alq_3$ as an electron transport or injection layer. We observed the photovoltaic characteristics of the solar celt devices using the Xe lamp as a light source.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1890-1892
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• 2005

Recently, high luminance and high efficiency were realized in OLEDs with multilayer structure including emitting materials such as metal-chelate complexes. New luminescent materials, [2- (2-hydroxyphenyl)-quinoline] (Zn(HPB)q), [(1,10-phenanthroline)- (8-hydroxyquinoline)] Zn(Phen)q was synthesized. Zn-Complexes have low molecular compound and thermal stability. The ionization potential(IP) and electron affinity(EA) of Zn-complexes were measured by cyclic-voltammetry(CV). The fundamental structure of the OLEDs was $ITO/{\alpha}$-NPD/Zn-Complex/Al and then we made device structure rightly in energy band gap. We using Zn(Phen)q as emitting layer and Zn(HPB)q as electron transport layer. We measured current density-voltage, luminance-voltage characteristics.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.483-489
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• 2010

Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.