• Title/Summary/Keyword: Light Emitting diode

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A Synthesis Ratio of Light Emitting Diodes and Quantization Noise for Increasing Brightness of Head-up Displays (헤드업 디스플레이 휘도 증가를 위한 LED 합성비율과 영상잡음에 대한 연구)

  • Chi, Yongseok
    • Journal of Broadcast Engineering
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    • v.21 no.5
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    • pp.816-823
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    • 2016
  • This paper studies a light emitting diode(LED) overlapping method of a head-up display that consists of a digital micro device(DMD) panel and a red, green, blue LED in order to increase the brightness of display system and optical output power. This optimization overlapping method removes a quantization noise which occur due to LED overlapping too excessive and stabilizes the junction temperature of LED. In order to reduce junction temperature of LED, the a correlation between a green duty and LED overlapping ratio is studied. Throughout this study, the brightness of head-up display exhibited high increasement ratio of luminance around 33.3 percent at 39 percent overlapping method.

Optimization of Mg:Ag Cathodes and Effect of LiF Electron Injection Layer on the Characteristics of Top Emission Organic Light Emitting Diodes (전면 유기발광 다이오드 제작시 Mg:Ag 캐소드 최적화 및 LiF 전자주입층 유무에 따른 소자 특성에 관한 연구)

  • Song, Min Seok;Kwon, Sang Jik;Cho, Eou-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.1
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    • pp.71-74
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    • 2022
  • For the process simplification in the fabrication of organic light emitting diode(OLED), top emission OLED (TEOLED) was fabricated without lithium fluoride(LiF) used as an electron injection layer (EIL). After co-deposition of Mg and Ag with a different process conditions, a cathode material adjacent to EIL was optimized when Mg and Ag have a ratio of 1:9 considering sheet resistance and transmittance. From the energy band diagram of TEOLED, band gap difference between Trisaluminium (Alq3) and Mg:Ag cathode show the difference of 0.4 eV according to the usage of LiF The fabricated TEOLED without LiF showed the improvement of 5.2 % and 2.7 % in the luminance and the current density comparing that with LiF. The results show there is no significant difference in OLED characteristics regardless of LIF layer in the TEOLED structures.

Effect of Air Exposure on ZnO Thin Film for Electron Transport Layer of Quantum Dot Light-Emitting Diode (ZnO 박막 전자수송층의 공기 노출에 의한 양자점 발광다이오드의 특성 변화)

  • Eunyong Seo;Kyungjae Lee;Jeong Ha Hwang;Dong Hyun Kim;Jaehoon Lim;Donggu Lee
    • Journal of Sensor Science and Technology
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    • v.32 no.6
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    • pp.455-461
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    • 2023
  • We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

InP/ZnS Core/shell as Emitting Layer for Quantum Dot LED

  • Kwon, Byoung-Wook;Son, Dong-Ick;Lee, Bum-Hee;Park, Dong-Hee;Lim, Ki-Pil;Woo, Kyoung-Ja;Choi, Heon-Jin;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.451-451
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    • 2012
  • Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

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Analysis of the Characteristics of a White OLED using the Newly Synthesized Blue Emitting Material nitro-DPVT by Varying the Doping Concentrations of Fluorescent Dye and the Thickness of the NPB Layer (신규 합성한 청색발광재료 nitro-DPVT를 사용한 백색 유기발광다이오드의 형광색소 도핑농도 및 NPB 층의 두께 변화에 따른 특성 분석)

  • Jeon, Hyeon-Sung;Cho, Jae-Young;Oh, Hwan-Sool;Yoon, Seok-Beom
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.4
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    • pp.379-385
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    • 2006
  • A stacked white organic light-emitting diode (OLED) having a blue/orange emitting layer was fabricated by synthesizing nitro-DPVT, a new derivative of the blue-emitting material DPVBi on the market. The white-emission of the two-wavelength type was successfully obtained by using both nitro-DPVT for blue~emitting material, orange emission as a host material and Rubrene for orange emission as a guest material. The basic structure of the fabricated white OLED is glass/ITO/NPB$(200{\AA})$/nitro-DPVT$(100{\AA})$/nitro-DPVT:$Rubrene(100{\AA})/BCP(70{\AA})/Alq_3(150{\AA})/Al(600{\AA})$. To evaluate the. characteristics of the devices, firstly, we varied the doping concentrations of fluorescent dye Rubrene from 0.5 % to 0.8 % to 1.3 % to 1.5 % to 3.0 % by weight. A nearly pure white-emission was obtained in CIE coordinates of (0.3259, 0.3395) when the doping concentration of Rubrene was 1.3 % at an applied voltage of 18 V. Secondly, we varied the thickness of the NPB layer from $150{\AA}\;to\;200{\AA}\;to\;250{\AA}\;to\;300{\AA}$ by fixing doping with of Rubrene at 1.3 %. A nearly pure white-emission was also obtained in CIE coordinates of (0.3304, 0.3473) when the NPB layer was $250-{\AA}$ thick at an applied voltage of 16 V. The two devices started to operate at 4 V and to emit light at 4.5 V. The external quantum efficiency was above 0.4 % when almost all of the current was injected.

Development of Projection Scanbeam-SLA using Liquid Crystal Display and Visible Light Emitting Diode (LCD와 가시광선 LED를 사용한 전사방식의 Scanbeam-SLA 개발)

  • Yoon, Su Hyun;Park, In Baek;Kim, Min Sub;Jo, Kwang Ho;Lee, Seok Hee
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.3
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    • pp.340-348
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    • 2013
  • In Projection Stereolithography Apparatus (PSLA), Digital Micromirror Device (DMD) and Liquid Crystal Display (LCD) are used as a beam pattern generator. The DMD shows high resolution, but it is mostly applied in micro stereolithography due to high cost and fabricable area. In LCD, the size of pattern beam is freely controlled due to various panel sizes. The LCD, however, has some limitations such as short life time by the high power light source, non-uniform light intensity of pattern beam and low transmittance of UV-light. To solve these problems in LCD-based PSLA, a Scanbeam-SLA with LCD of 19 inches and visible LED-array is developed. In this system, the light module works like a scanner for uniform illumination. The system configuration, working principle and fabrication examples are addressed in this study.

Correlation between the temperature and elastic properties of the light guide plate in edge-lit light-emitting-diode backlights

  • Kim, Jae-Hyun;Kim, Tae-Hyun;Lee, Byung-Woo;Seo, Jae-Seok;Ko, Jae-Hyeon
    • Journal of Information Display
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    • v.12 no.1
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    • pp.23-27
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    • 2011
  • The correlation between the temporal and spatial variations of the elastic constant and temperature change was examined for a light guide plate (LGP) adopted in the edge-lit light-emitting-diode backlight for mobile applications, using the micro- Brillouin light scattering method. The velocity of sound and the elastic constant $C_{11}$ of an LGP made from bisphenol-A polycarbonate (PC) were investigated as functions of temperature, time, and position on the LGP. The temporal variation of $C_{11}$ exhibited an exponential decay, while the spatial variation of $C_{11}$ reflected the temperature distribution on the LGP. The glass transition temperature of the PC LGP was found to be located at $155^{\circ}C$. The result showed that systematic transformation between the elastic property and the temperature is possible and that the temperature distribution on the bulk LGP can be accurately probed via the present experiment method, without using any special temperature measurement equipment.

Advanced Organic LED Materials for the Excellent Organic LED Displays

  • Enokida, Toshio;Gwon, Tae-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2001.08a
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    • pp.189-190
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    • 2001
  • In this paper, we explain the materials of the advanced organic light emitting diode(OLED) for the excellent OLED displays. We have been designed the various kinds of organic materials like as the hole-injecting materials (HIMs), the hole transporting materials(HTMs). the light emitting materials(LEMs), and the electron injecting materials(EIMs). As the results, we found the excellent materials and their combinations for the OLED displays.

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Optical Characteristics and Electric Field Dependency of $Alq_3$ Thin Film (Alq3박막의 광학특성과 전계 의존성)

  • Lee, Cheong-Hak;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1358-1360
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    • 1998
  • In this paper, organic thin film LED(light emitting diode) having ITO glass/$Alq_3$/Al structure using an $Alq_3$ was fabricated by the vacuum evaporation and the absorbance, wave length, 1-V characteristics were investigated. Electroluminescence of green and wavelength of 510[nm] were observed in this device. We observed absorbance form 320[nm] to 430[nm] and knew unstability of $Alq_3$ material as light emitting device.

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