• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.119-125
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• 1990

This paper describes fiber optic voltage sensor using EOM-BSO (Electro-Optic Modulator-Bismuth Silicon Oxcide). Transceiver has an electical/optical converter and an optical/electrical converter which consist of light emitting diode, PIN-PD, and electronic circuits. Multimode fiber cable of $100/140{\mu}m$ core/clad diameter is used for connecting the transceiver to fiber cable and fiber optic voltage sensor. Before our experiments, by applying the Maxwell equations and wave equations, We derive matrix equation on wave propagation in the BSO single crystal. And also we derive optimal equation on intensity modulation arising through an analyzer. According to experi-mental results, fiber optic voltage sensor has maximum $2.5{\%}$ error within the applied AC voltage of 800V. As the applied voltage increases, saturation values of voltage sensor also increase. This phenomenon is caused by optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optical rotatory power of BSO single crystal. And temperature dependence of sensitivity for fiber optic voltage sensor in the temperature range from$-20^{\circ}C\to\60^{\circ}C$ are measured within ${\pm}0.6{\%}$. And frequency characteristics of the voltage sensor has good frequency characteristics from DC to 100kHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.125-125
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• 2010

극성 [0001] 방향으로 성장된 질화물 기반의 LED (light emitting diode) 는 분극현상에 의해 발생하는 강한 내부 전기장의 영향을 받게 된다. 이러한 내부 전기장은 양자우물 내의 전자와 정공의 공간적 분리를 야기하고 quantum confined Stark effect (QCSE)에 의한 발광 파장의 적색 편이가 발생하며 양자효율의 저하를 가져오게 된다. 이러한 문제를 해결하기 위해 InGaN/GaN이나 AlGaN/GaN 양자 우물구조를 GaN의 m-plane (1$\bar{1}$00) 이나 a-plane (11$\bar{2}$0) 등 비극성면 위에 성장하려는 시도를 하고 있다. 그러나 비극성 면의 비등방성 (anisotropy) 으로 인하여 결정성이 높은 비극성 GaN을 성장하는 데에는 많은 어려움이 있다. GaN 층의 표면을 평탄화하고 결정성을 향상시키기 위해서 저온 GaN 또는 AlN 버퍼층을 성장하는 2단계 방법이나 고온 버퍼층을 이용하여 성장하는 연구들이 많이 진행되고 있다. 본 연구에서는 고온 GaN 버퍼층을 이용하여 기존의 2단계 성장과정을 단순화한 비극성 a-plane GaN을 r-plane 사파이어 기판위에 유기금속 화학증착법 (MOCVD)으로 성장하였다. 사파이어 기판위에 AlN 층을 형성하기 위한 nitridation 과정 후 1030 도에서 두께 45 ~ 800 nm의 고온 GaN 버퍼층을 성장하고 총 박막 두께가 2.7 ~ 3 um 가 되도록 a-plane GaN을 성장하여 표면 양상의 변화와 결정성을 확인하였다. 또한 a-plane GaN 박막 성장 시에 성장 압력을 100 ~ 300 torr 로 조절하며 박막 성장의 변화 양상을 관찰하였다. 고온 GaN 버퍼층 성장 두께가 감소함에 따라 결정성은 증가하였으나 표면의 삼각형 형태의 pit 밀도가 증가함을 확인하였다. 또한 성장 압력이 감소함에 따라 표면 pit은 감소하였으나 결정성도 감소하는 것을 확인하였다. 성장 압력과 버퍼층 성장 두께를 조절하여 표면에 삼각형 형태의 pit이 존재하지 않는 RMS roughness 0.99 nm, 관통전위밀도 $1.78\;{\times}\;10^{10}/cm^2$, XRD 반가폭이 [0001], [1$\bar{1}$00] 방향으로 각 798, 1909 arcsec 인 a-plane GaN을 성장하였다. 이 연구를 통해 고온 GaN 버퍼 성장방법을 이용하여 간소화된 공정으로 LED 소자 제작에 사용할 수 있는 결정성 높은 a-plane GaN을 성장할 수 있는 가능성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.745-752
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• 2016

In the era of the Internet of Things, where all physical objects are connected to the Internet, we suggest a remote control system using a Raspberry Pi single-board computer with ZigBee, which can turn an indoor light-emitting diode (LED) and a multiple-tap on and off, and with a smart phone can control the brightness of the LED as well as an electronic door lock. By connecting an infrared (IR) transmitter module to the Raspberry Pi, we can control home appliances, such as an air conditioner, and we can also monitor indoor images, indoor temperatures, and illumination by using a smart phone app. We developed a method of finding out IR transmission codes required for remote-controllable appliances with an AVR micro-controller. We suggest a method to remotely open and shut an office door by novating the door lock. The brightness level of an LED (between 0 and 10) can be controlled through a PWM signal generated by an ATmega88 microcontroller. A mutiple-tap is controlled using an ATmega32, a photo-coupler, and a TRIAC. The signals for measured temperature and illumination are converted from analog to digital by using the ATtiny44A microcontroller transmitting to a Raspberry Pi through SPI communication. Then, we connect a camera to the CSI head of the Raspberry Pi. We can turn on the smart multiple-tap for a certain period of time, or we can schedule the multi-tap to turn on at a specific time. To reduce standby power, people usually pull out a power code from multiple-taps or turn off a switch. Our method helps people do the same thing with a smart phone, if they are away from home.

• Journal of Climate Change Research
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• v.4 no.3
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• pp.211-219
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• 2013

This study uses the LEAP model that is a long-term energy analysis model to analyze reduction potential on S city residential sector energy usage for greenhouse gas emission. Energy consumption of S-si in 2009 is consumed most in residential and commerce sector by 39.1%. Also, energy and greenhouse gas emission of residential sector is expected to increase due to increase of households. Therefore, greenhouse gas reduction measures are desperately required in residential sector. For this study recognizes energy consumption of S-si residential sector and has established reduction measure of S-si residential sector greenhouse gas through literature search on domestic and foreign climate change correspondence policies. Also, construction of greenhouse gas reduction potential by reduction measures through LEAP model. There were a total of 5 reduction measures scenarios is Reference Scenario, LED Lighting, Energy Alternative, Green Life Practice, and Total Reduction Measure. As a result, greenhouse gas emission of Light Emitting Diode Lightings by 2020 was $1,181.0thousand\;tonCO_2eq$, decrease of 6.1% compared to the Reference Scenario and Greenhouse gas emission of Energy Alternative by 2020 was $1,171.6thousand\;tonCO_2eq$, decrease of 6.8% compared to the Reference Scenario. Greenhouse gas emission of Green Life Practice by 2020 was $1,128.7thousand\;tonCO_2eq$, decrease of 10.2% compared to the Reference Scenario. For Total Reduction Measures by 2020 emission was $966.9thousand\;tonCO_2eq$, decrease 23.1% compared to Reference Scenario.

• Microbiology and Biotechnology Letters
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• v.47 no.3
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• pp.332-336
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• 2019

The use of ultraviolet (UV) spectroscopy for foods is known to have a microbial inhibitory effect. UV-A having a longer wavelength than UV-C can be used for continuous or intermittent UV irradiation of food stored in containers or packages. Because UV-LED can be used effectively at a low price, this study reported the effect of UV-A 365 nm-LED on inhibiting Bacillus subtilis in accordance with the packaging conditions employed in daily use. The packaging materials were linear low-density polyethylene (LLD-PE), nylon/low density polyethylene (LDPE), polystyrene, and glass. When all packaging materials were treated with 365 nm UV-LED, B. subtilis was observed to remain inactive for 30-60 min. Further, compared with the control (-log 5), the survival rate of B. subtilis was -log 2.0-2.5 for nylon/LDPE and -log 2.58-3.61 for LLD-PE. These packaging materials showed an excellent inhibitory effect regardless of their thickness. Typically, a decrease in the viable cell count of more than 3 log indicates a 99.9% bactericidal effect. These results suggest that 365 nm UV-LED permeated the packaging material and inhibited bacterial growth.

• Journal of Mushroom
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• v.20 no.2
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• pp.78-85
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• 2022

The consumption of Flammulina velutipes mushroom imported from Korea has been associated with the cases of listeriosis in the United States, Canada, and Australia. We investigated the effect of sanitizing the plastic wrapper (used in packaging F. velutipes) with slightly acidic electrolyzed water (SAEW) and ultraviolet C waterproof light-emitting diode (UVC-W-LED) on reducing the Listeria monocytogenes. Further, the effect of UVC-LED on L. monocytogenes growth in F. velutipes at different storage temperatures (2, 4, and 10℃) was determined. The combined (SAEW+UVC-W-LED) treatment for 5-10 min reduced 99.9% of bacterial population from the contaminated plastic wrapper. In addition, the UVC-LED treatment for 3 min reduced the L. monocytogenes concentration in F. velutipes by 0.47 log CFU/g. Moreover, the growth of L. monocytogenes in the treated mushrooms was slower than that of the untreated (control) ones. L. monocytogenes concentration in F. velutipes increased over 3 log CFU/g at 2℃ and 10℃ for 60 and 10 days, respectively. The growth of L. monocytogenes at the bottom of mushrooms was faster than that at the top at both the temperatures. These results indicate that the combined SAEW+UVC-W-LED treatment of plastic wrappers and the UVC-LED treatment of mushrooms can be used as potential hurdle technologies to control the risk of L. monocytogenes in mushrooms prior to packaging at farms.

• Journal of Plant Biotechnology
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• v.49 no.4
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• pp.307-315
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• 2022

Artemisinin is a secondary metabolite of Artemisia annua that shows potent anti-malarial, anti-bacterial, antiviral, and anti-tumor effects. The supply of artemisinin depends on its content in Artemisia annua, in which various environmental factors can affect the plant's biosynthetic yield. In this study, the effects of different light-emitting diode (LED)-irradiation conditions were tested to optimize the germination and growth of Artemisia annua for the enhanced production of artemisinin. Specifically, the ratio between the red and blue lights in the irradiating LED was varied for investigation as follows: [Red : Blue] = [6 : 4], [7 : 3], and [8 : 2]. Furthermore, additional stress factors like UV-B-irradiation (1,395 ㎼/cm²), low temperature (4℃), and dehydration were also explored to induce hormetic expressions of ADS, CYP, and ALDH1, which are essential genes for the biosynthesis of artemisinin. Quantitative polymerase chain reaction (qPCR) was used to analyze the expression levels of the respective genes and their correlation with the specified conditions. [8 : 2] LED-irradiation was the most optimal among the tested conditions for the cultivation of Artemisia annua in terms of both fresh and dry weights post-harvest. For the production of artemisinin, however, [7 : 3] LED-irradiation with dehydration for six hours pre-harvest was the most optimal condition by inducing around twofold enhancement in the biosynthetic yield of artemisinin. As expected, a correlation was observed between the expression levels of the genes and the contents of artemisinin accumulated.

• Korean Journal of Environmental Biology
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• v.26 no.2
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• pp.57-65
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• 2008

The effects of light quality and irradiance on the growth of centric diatom, Skeletonema costatum (Jinhae Bay strain) were investigated in the laboratory. At 20$^{\circ}C$ and 30 psu, the irradiance-growth curve showed the maximum growth rate of 1.17 day$^{-1}$ with half-saturation photon flux density (PFD) (K$_s$) of 92.4 $\mu$mol photons $m^{-2}s^{-1}$, $\mu$=1.17 (I-5.28)/(I+81.8), (r=0.98), and a compensation PFD (I$_0$) was 5.28 $\mu$mol photons $m^{-2}s^{-1}$. The 10 equated to a depth of 3$\sim$5 m from March to May, 11 m in June and 4 m from July to September in Jinhae Bay. These responses suggested that irradiance at the depth near the surface layer in Jinhae Bay would provide favorable conditions for S. costatum. To assess the effects of light (i.e. wavelengths) on the growth, nine wave-lengths were used ranging from near ultraviolet to near-infrared supplied by light emitting diode. At an irradiance level of 25 $\mu$mol photons $m^{-2}s^{-1}$, S. costatum grew under wavelengths of 405, 470, 505, 525, 568 and 644 nm, but did not grow at 590 and 623 nm; whereas S. costatum grew at all wavelengths at 100 $\mu$mol photons $m^{-2}s^{-1}$. This implies that S. costatum is likely to grow well in enclosed water bodies where suspended particles absorbs most of the blue wavelengths, and dominated by yellow-orange wavelengths.

• Journal of Food Hygiene and Safety
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• v.36 no.5
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• pp.447-453
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• 2021

In this study, the effectiveness of physical control technology, a combined light sterilization (LED, UV) and hot water treatment in reducing Aspergillus ochraceus for food production environment was investigated. In brief, 1 mL aliquot of A. ochraceus spore suspension (10^7-8 spore/mL) was inoculated onto stainless steel chips, which was then dried at 37℃, and each was subjected to different physical treatment. Treatments were performed for 0.5, 1, 2, 5, 8, and 11 hours to reduce the strains using a light-emitting diode, but no significant difference was confirmed among the treatments. However, a significant reduction was observed on the chips treated with UV-C exposure and hot water immersion. After being treated solely with 360 kJ/m² of UV-C on stainless steel chip, the fungi were significantly reduced to 1.27 log CFU/cm². Concerning the hot water treatment, the initial inoculum amount of 6.49 log CFU/cm² was entirely killed by immersion in 83℃ water for 5 minutes. Maintaining a high temperature for 5 minutes at the site is difficult. Thus, considering economic feasibility and usability, we attempted to confirm the appropriate A. ochraceus reduction conditions by combining a relatively low temperature of 60℃ and UV rays. With the combined treatments, even in lukewarm water, A. ochraceus decreased significantly through the increases in the immersion time and the amount of UV-C irradiation, and the yield was below the detection limit. Based on these results, if work tools are immersed in 60℃ lukewarm water for 3 minutes and then placed in a UV sterilization device for more than 10 minutes, the possibility of A. ochraceus cross-contamination during work is expected to be reduced.