• 제목/요약/키워드: Light Emitter

검색결과 116건 처리시간 0.027초

레이저 거리계의 분해능에 관한 연구 (A study on the resolution of the laser range finder)

  • 차영엽;유창목
    • 제어로봇시스템학회논문지
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    • 제4권1호
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    • pp.82-87
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    • 1998
  • In this study, the theoretical resolution analysis of an active vision system using laser range finder is performed for surrounding recognition and 3D data acquisition in unknown environment. In the result, the resolution of range data in laser range finder is depend on the distance between lens center of CCD camera and light emitter, view angle, beam angle, and parameters of CCD camera. The theoretical resolutions of the laser range finders of various types which are based on parameters effected resolution are calculated and experimental results are obtained in real system.

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아르곤 이온빔을 이용한 CNT 페이스트 에미터의 표면처리에 관한 연구 (A Study on the Surface Treatment of CNT Paste Emitter by Ar Ion Irradiation)

  • 권상직
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.456-461
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    • 2007
  • In this study, a surface treatment method using accelerated Ar ions was experimented for exposing the carbon nanotubes (CNT) from the screen-printed CNT paste. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposed by UV light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy, bombardment time, and the power of RF plasma ion source. When Ar ions accelerated with 100 eV energy from the 100 W RF plasma source are bombarded on the CNT paste surface for 10 min, the emission level and the uniformity were best.

High Luminance $Zn_2SiO_4:Mn$ Phosphors Prepared by Homogeneous Precipitation Method

  • Sohn, Kee-Sun;Choi, Yoon-Young;Jung, Ha-Kyun;Park, Hee-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.31-32
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    • 2000
  • $Zn_2SiO_4:Mn$ phosphors have been recently spotlighted as a green component for plasma TV application. Commercial phosphors such as P1 and P39 have been known to be a very efficient green light emitter for lamp and CRT application. Unfortunately, such commercial phosphors are not suitable for the plasma TV application as both the emission intensity and the decay time do not meet the requirement for plasma TV. The present investigation aims at improving the existing $Zn_2SiO_4:Mn$ phosphors for the purpose of adapting them to PDP application.

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교류 구동형 박막 전계 발광 소자용 원추형 Si micro-tip 반사체 어래이의 제작 (Fabrication of Cone-shaped Si Micro-tip Reflector Array for Alternating Current Thin Film Electroluminescent Device Application)

  • 주병권;이윤희;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권9호
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    • pp.662-664
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    • 1999
  • We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

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MOCVD를 이용한 화합물 반도체 Solar Cell의 개발-Field Aided Heteroface 전지 (Design and Fabrication of Compound Semiconductor Solar Cells Grown by MOCVD-Field Aided Heteroface Cell)

  • 창기근;엄우용;임성규
    • 전자공학회논문지A
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    • 제28A권9호
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    • pp.752-760
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    • 1991
  • The computer aided analysis is performed to investigate the influence of physical parameters (thickness and doping concentration, etc.) in the window, emitter, base on the efficiency characteristics of a uniformly doped hetroface cell. A field aided heteroface cell is newly designed on a basis of optimum data obtained from the theoretical analysis. The field aided heteroface cell fabricated using MOCVD exhibits a total/active area conversion efficiency of EFF. (tot) = 18.9% /EFF. (act.) = 21.4% under the natural incident light of 56.2 mW/cm\ulcorner having a low series resistance of Rs = 0.94 \ulcornercm\ulcornerand a high spectral response of S.R. (ext) > 90% in a range of $7700{\AA}$ < $8500{\AA}$.

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Red Fluorescent Organic Light-Emitting Diodes Using Modified Pyran-containing DCJTB Derivatives

  • Lee, Kum-Hee;Kim, Sung-Min;Kim, Jeong-Yeon;Kim, Young-Kwan;Yoon, Seung-Soo
    • Bulletin of the Korean Chemical Society
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    • 제31권10호
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    • pp.2884-2888
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    • 2010
  • Two red fluorescent DCJTB derivatives (Red 1 and 2) based on modified pyrans were synthesized and their electroluminescent properties were investigated. Multilayered OLEDs were fabricated with the device structure of ITO/NPB (40 nm)/Red 1, 2 or DCJTB (0.5 or 1%): $Alq_3$ (20 nm)/$Alq_3$ (40 nm)/Liq (2 nm)/Al. All devices exhibited efficient red emissions. In particular, a device containing emitter Red 2 as a dopant in the emitting layer, the maximum luminance was $8737\;cd/m^2$ at 12.0 V, the luminous and power efficiencies were 2.31 cd/A and 1.25 lm/W at $20\;mA/cm^2$, respectively. The peak wavelength of the electroluminescence was 638 nm with the CIE (x,y) coordinates of (0.63, 0.36) at 7.0 V.

Conduction properties of phosphorescent emitting layers and their application to optimizing white OLEDs

  • Baek, Heume-Il;Noh, Seung-Uk;Lee, Hyun-Koo;Suman, C.K.;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1055-1055
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    • 2009
  • The mobility of charge carriers has been investigated in the pristine and phosphorescent materials doped host materials using time-of-flight photoconductivity technique. The field and temperature dependences of the mobility were analyzed with the Gaussian disorder model. Based on these results, we optimized white organic light emitting diodes (WOLEDs) consisting of multi-emitting layers doped with phosphorescent and fluorescent dopants. Especially, we studied the effect of each emitter position and an interlayer on the device characteristics of WOLEDs.

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HIP에 의해 합성된 CN nanostructures의 구조 및 전계방출 특성 (Structure and Electron Emission Properties of CN Nanostructures Obtained by HIP Apparatus)

  • 오정근;이양두;문승일;양석현;이윤희;김남수;주병권
    • 한국전기전자재료학회논문지
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    • 제16권8호
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    • pp.723-730
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    • 2003
  • The CN(carbon nitrogen) nanofibers were formed by HIP(high isostatic pressure) process. From the field emission measurement, CN nanofibers shows an excellent characteristics of emitter, better than CNTs and carbon nanofibers. The structures obtained can be divided into three groups : bamboo-like fibers, corrugated structures and bead necklace-like fib res. Emission properties of CN nanofibers were investigated for spacing, between anode and cathode, variation. Turn-on fields was 1.4 v/$\mu\textrm{m}$. The time reliability and light emission test were carried out for about 100 hours. We suggest that CN nanofibers can be possibly applied to the high brightness flat lamp because of low turn-on field and time reliability

Metal assisted etching으로 나노 구조 형성에 따른 단결정 실리콘의 표면조직화

  • 정현철;백용균;김형태;장효식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.270-270
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    • 2010
  • 결정질 실리콘 태양전지는 표면반사에 의한 광 에너지 손실을 최소화 시키고자 식각을 통한 표면 조직화(texturing)가 이루어진다. 단결정 실리콘 웨이퍼의 경우 알칼리 용액(alkali solution)을 사용하여 이방성 식각(anisotropic etching)을 함으로써 표면에 피라미드를 형성하고 광 포획(light trapping) 효과에 의해 반사율을 줄이게 된다. 그러나 피라미드 형성을 통한 반사율 감소에는 한계를 가지고 있다. Metal assisted etching을 기반으로 한 새로운 형태의 텍스쳐링인 nano texturing은 피라미드가 이루어진 표면에 수많은 nm사이즈의 구조를 형성시킴으로써 표면에서의 반사율을 현저히 감소시킨다. 먼저 $AgNO_3$용액으로 웨이퍼 표면에 Ag입자를 코팅한 후, 그 웨이퍼를 다시 $HF/H_2O_2$ 용액으로 일정시간 동안 식각을 거치게 된다. 그로 인해 표면에는 수 nm 사이즈의 구조물들이 피라미드 위에 생성되고, $AgNO_3$의 농도 및 식각 시간에 따라 그 구조물의 크기 및 굵기가 달라진다. 결과적으로 평균 10%이상의 반사율을 보이던 기존 텍스쳐링 웨이퍼에서 3%이하의 낮은 반사율을 얻을 수 있었다. 또한 이런 nano texturing을 n-emitter 형성 공정 등에 따른 영향과 carrer lifetime에 대하여 연구하였다.

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Study of Localized Surface Plasmon Polariton Effect on Radiative Decay Rate of InGaN/GaN Pyramid Structures

  • Gong, Su-Hyun;Ko, Young-Ho;Kim, Je-Hyung;Jin, Li-Hua;Kim, Joo-Sung;Kim, Taek;Cho, Yong-Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.184-184
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    • 2012
  • Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

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