• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.206-208
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• 2000

0.65 mol% MgO-doped LiNbO$_3$single crystals were grown by CZ method. The obtained single crystals were colorless and transparent. Noncritically phase-matched second harmonic generation (SHG) of 532-nm radiation from 1064-nm in MgO-doped LiNbO$_3$has been investigated by using pulsed Nd:YAG laser. The phase-matching temperature was room temperature. SHG conversion efficiencies were typically achieved higher than 50% at the phase-matching temperature with no photorefractive damage in the region of fundamental power density which was used in this experiment. The thermo-birefringence coefficient and the electro-birefringence coefficient of SHG were calculated from the temperature phase-matching profile with the electric field.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.85-91
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• 1999

$H:LiNbO_3$ optical modulator with Cu/parylene electrode layer, which has a merits in the bandwidth, power consumption and fabrication conditions as compared with conventional Au/Cr/$SiO_2$, is proposed and fabricated. Analysis and design of optical modulator is performed by finite element calculation. Various unit processes for fabricating the proposed modulator, 1550nm $H:LiNbO_3$ optical waveguide, parylene buffer layer, and CPW Cu electrode, were developed, After dicing and end-face polishing of fabricated modulator chip, optical modulation responses as sawtooth electrical driving voltage has been measured at low frequencies. Properties of optical waveguide had not been changed before and after Cu/parylene electrode processes, which make confirm the reproducible fabrication of optical modulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.260-260
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• 2007

강유전성 세라믹스 재료로써는 PZT계열의 세라믹재료가 널리 쓰이고 있다. 이는 우수한 유전 및 압전특성을 가지고 있으나, PbO을 다량 함유하고 있어 $1000^{\circ}C$이상에서 PbO가 급격하게 휘발되는 성질에 따라서 조성의 변동이 생겨 재현성이 어려우며 이를 방지하기 위하여 과잉 PbO를 첨가시키기 때문에 PbO휘발로 인한 강한 독성이 인체에 유해하다. 최근에는 Pb의 환경문제가 대두됨에 따라 이를 대체할 다른 물질의 개발이 활발하게 연구되고 있다. 대표적인 비납계 강유전 세라믹스인 $(Na_{0.5}K_{0.5})NbO_3$ ($d_{33}$ = 120 pC/N, Kp = 39%, Qm = 210, 이하 NKN라 표기) 조성은 $KNbO_3,\;NaNbO_3$ 상태도에 따라 순수한 NKN 세라믹스는 $1140^{\circ}C$에서 안정상을 가지나, 높은 온도로 인하여$Na_2O$와 $K_2O$가 쉽게 휘발됨에 따라 화학량 비의 변화가 생겨 이차 상을 형성하기도 한다. 따라서 본 연구에서는 $LiNbO_3$의 새로운 고용체를 추가시켜 기본 NKN조성에 압전성 및 고온에서의 상안정성을 향상시키고자 하였다. 최적 조성을 설계하기 위하여 (1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$, x=(0,0.02,0.04,0.06,0.08)의 범위에서 조성을 변화시키면서 실험하였다. 시편 제작은 일반적인 세라믹스 소결 공정을 적용하였는데, $850^{\circ}C$에서 5시간 하소 후 $1080^{\circ}C$에서 2시간 소결하였다. 하소 및 소결 후에는 XRD분석을 통해 perovskite구조를 확인하였고, 미세구조 확인을 위해 주사전자현미경 (SEM)으로 관찰하였다. 압전특성을 평가하기 위해 압전 $d_{33}$-meter를 사용하였으며, impedance analyzer (HP 4194A)를 이용하여 전기적 특성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.77-77
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• 2009

$Pb(Zr,Ti_O_3$계 세라믹스는 우수한 압전 특성으로 인하여 압전변압기 및 액츄에이터, 센서 등 많은 분야에 응용이 되어져 왔다. 그러나, 최근 들어 $1000^{\circ}C$에서 급속도로 많은 휘발을 하는 PbO는 환경 및 인체에 나쁜 영향을 미칠 뿐 아니라 사용 후의 처리도 어려워 선진국에서는 사용을 제한하거나 줄이고 있는 추세에 있다. 따라서, PbO를 포함하지 않은 무연 (Lead-free)계 압전 세라믹스에 대한 연구가 많은 관심을 끌고 있으며 앞으로는E 장래성 있는 하나의 이슈 분야가 될 것이다. 이러한 Pb-based System 세라믹스를 대체 할 재료로서 $(Bi_{1/2}Na_{1/2})TiO_3$나 Tungsten-Bronze type, $(K_{1/2}Na_{1/2})NbO_3$ 등이 주로 연구가 되고 있다. 특히, alkali niobate를 기초로 한 $(K_{1/2}Na_{1/2})NbO_3(NKN)$은 무연 압전 물질로서 많은 주목을 받고 있다. 그러나, NKN의 주요 성분인 K 의 높은 조해성 때문에 일반적인 고상방법으로는 고 밀도의 세라믹을 얻기 힘들뿐더러 낮은 상전이 온도 때문에 많은 응용에는 제약이 되고 있다. 이러한 세라믹의 단점을 보완하고자 Hot forging, RTGG, SPS 등 과 같이 특수한 소결방법을 사용하여 고밀도의 세라믹을 제작하지만 이 방법들은 제품 대량 생산에 있어 경제적으로나 복잡한 제조과정을 고려할 때 매우 비효율적이라고 판단된다. 그러므로 $BaTiO_3$, $LiTaO_3$, Mg, Ca등을 첨가 시켜 소결을 향상시키고 고밀도를 얻기 위해 많은 연구가 진행 중이다. 따라서 본 연구에서는 Pb-based계의 세라믹스를 대체할 우수한 특성의 세라믹스를 제작하고자 기존의 $(K_{1/2}Na_{1/2})NbO_3(NKN)$세라믹스에서 낮은 용융온도 때문에 소결하기 어려운 $KNbO_3$를 제거한 $NaNbO_3$에 $LiNbO_3$와 $BaTiO_3$를 추가한 $NaLiNbO_3-BaTiO_3$세라믹스에 $K_4CuNb_8O_{23}$(KCN)을 첨가함으로서 이에 따른 압전 및 유전 특성을 조사하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.525-531
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• 1998

A series of $LiNbO_3$ single crystals were grown by the Czochralski method from a congruent melt, a congruent melt with 0.05 mol% $Fe_2O_3$, a congruent melt with 6 wt.% $K_2O$ and a congruent melt with 6 wt.% $K_2O$ and 0.05 mol% $Fe_2O_3$ respectively. The growth of $LiNbO_3$ crystal from a congruent melt 6 wt.% $K_2O$ leads to nearly stoichiometric specimens. This is established by studying the following properties; XRD patterns, temperature dependences of the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$vibration and linewidths of the ESR of $Fe_{Li}^{3+}$.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.128-134
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• 2012

The performance evaluation and fabrication of integrated-optic electric-field sensor utilizing $Ti:LiNbO_3$ asymmetric Mach-Zehnder intensity modulator with a push-pull lumped electrode and a plate-type probe antenna to measure an electric field strength is described. The modulator has a small device size of $46{\times}7{\times}1\;mm$ and operates at a wavelength $1.3{\mu}m$. The devices are simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides. The minimum detectable electric field is 1.02 V/m and 6.91 V/m, corresponding to a dynamic range of ~35 dB and ~10 dB at the frequencies of 500 KHz and 5 MHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.205-209
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• 2009

In this study, in order to develop the composition ceramics for lead-free ultrasonic motor, (1-x-0.09)$NaNbO_{3-x}BaTiO_3-0,09LiNbO_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $BaTiO_3$ substitution. All the specimens showed orthorhombic phase structure without secondary phase, $BaTiO_3$ substitution enhanced density, dielectric constant(${\epsilon}_r$) and electromechanical coupling factor($k_p$), However, mechanical quality factor was deteriorated. Curie temperature of specimens was observed as about $380^{\circ}C$. At the $BaTiO_3$ substitution of 4 mol%, density, electromechanical coupling factor($k_p$), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of specimen showed the optimum value of $4.493g/cm^3$, 0.236, 175, 70 pC/N, respectively.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.886-890
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• 2003

The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.