• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.1-10
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• 1995

Congruent $LiNbO_3$ single crystals and $LiNbO_3$ : Mg single crystals, having high resistance to optical damage, doped with MgO to the levels of 2.0, 5.0 and 7.0 mol% were grown successfully by CZ method and optical damage of each crystal was measured by compen. sation method. With doping level reaching about 5 mol%, there was an abrupt change in the features of optical absorption edge and $OH^-$ absorption band. From these data, we confirmed indirectly the threshold in MgO doping level. When the MgO doping amount reaches about 5 mol% in the melt, $Mg^{2+}$ occupies Nb site and becomes $Mg_{Nb}^{2+}$, resulting in the sharp increase of optical damage resistance. The optical damage resistance of $LiNbO_3$ : Mg was improved more than three times when MgO amount in the melt reaches 5 mol%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.71-78
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• 1991

The congruent composition of $LiNbO_3$ was determined by measuring Curie temperature($T_c$) of crystals and residual melt grown from the range 48.45 to 48.60mole%$Li_2O$ melts. The $T_c$ of $LiNbO_3$ varied with compositon largely. The variation of $T_c$ with composition was found to follow $T_c=l0.4184c^2-962. 996C + 23342$, where C is mole % LizO. DSC-1500 was used to measure $T_c$. Distribution coefficients for $LiNbO_3$$ LiNbO_3$ contains 48.52mole$Li_2O$ and has a measured Tc of $1145{\pm}^{\circ}C$

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.129-134
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• 1995

Bulk properties of single crystals $KMnCl_3$ undoped and Mg- doped $LiNbO_3$ were examined by using the neutron scattering technique. This study shows that the good -looking samples by polarized light have to be examined by the. neutron scattering to ensure the bulk properties of single crystal. Large mosaic spread in KMnCb indicated the crystal is not in a single domain. Many parts are relatively randomly directed against crystal axis with close angle each other. For the small mosaic spread of Li~ in the scattering pattern, it is found that some large domains have close orientations. Mg doped Li~ is turned out to be a well grown one.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.52-53
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• 2000

광굴절 단결정을 이용한 홀로그램 저장은 일반적으로 Fe 흑은 Ce 과 같이 한 가지 종류의 이온이 첨가된 재료를 사용해왔다. 그러나 저장된 홀로그램 정보를 재생할때 지워지지 않도록 정착화를 위해 사용된 열이나 전기장 대신 자외선을 이용한 방법이 최근에 시도되고 있다$^{(1)}$ . 이 방법은 모든 것을 광으로 처리할 수 있는 장점이 있으나 2광자 기록방법$^{(2)}$ 과는 달리 두 가지 종류의 이온 첨가물이 필요하므로 전하의 이동이나 트랩과정이 더욱 복잡할 수밖에 없다. 특히 LiNbO$_3$ 재료는 photovoltaic 특성이 매우 강하여 다른 광굴절 재료와 구별된다. congruent Mn,Fe:LiNbO$_3$에 대한 실험 결과[1]와 stoichiometric LiNbO$_3$에서의 작은 polaron과 쌍 polaron에 의한 기록과 재생실험결과$^{(3)}$ 의 발표는 있으나 2중 첨가물의 LiNbO$_3$에 대한 이론적 접근은 아직 알려진 바 없다. 본 연구에서는 Mn,Ce:LiNbO$_3$와 Fe,W:LiNbO$_3$에서의 홀로그램 기록특성을 연구하였고 photovoltaic 효과를 고려한 홀로그램의 형성과 소멸과정에 대한 수치해석을 이용하여 결과의 설명을 시도하였다. (중략)

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.204-210
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• 2003

Electron magnetic resonance (EMR) of paramagnetic Cr$^{3+}$, Mn$^{2+}$, and Fe$^{3+}$ impurity ions in ferroelectric LiNbO$_3$ and LiTaO$_3$ single crystals has been studied. The actual sites location of paramagnetic impurity ions in the crystals was suggested from the experimental results and zero field splitting parameters calculated by superposition model. It turns out that Cr$^{3+}$ ions in LiNbO$_3$ crystal have two resonance centers and enter both the Li$^{+}$ and Nb$^{5+}$ ions. Mn$^{2+}$ and Fe$^{3+}$ impurity ions in LiNbO$_3$ substitute for Nb$^{5+}$ ions. However, both Cr$^{3+}$ and Fe$^{3+}$ ions in LiTaO$_3$ crystal reside at Li$^{+}$ ions.$ +/ ions.+/ ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.435-438
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• 2012

As lead-free piezoelectric materials, $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3+x$ mol% (where x = 0, 0.5, 1, 1.5, 2, 2.5 and 3, respectively) ceramics were fabricated by a conventional sintering process. The doping effects on the microstructure and electrical properties of the $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ ceramics were systematically investigated. When the 3 mol % $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ samples were sintered at $1,080^{\circ}C$ for 5 hrs in air, these ceramics showed excellent values of density=4.20 $g/cm^3$, piezoelectric constant ($d_{33}$)=174 pC/N and phase transition temperature$(T_c)=421.6^{\circ}C$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.79-85
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• 2023

A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄ (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃ ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li₂CO₃ reacted with Bi_1.5Zn_1.0Nb_1.5O₇, resulting in the formation of Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li₂CO₃ content (x) and consequently modulating the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇, and LiZnNbO₄ in the final sintered body, a sample with high dielectric constant (ε_r), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li₂CO₃ content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi₂Zn_2/3Nb_4/3O₇ and LiZnNbO₄ in the composite increased, while the volume fraction of Bi_1.5Zn_1.0Nb_1.5O₇ decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10^-4 to 3.31×10^-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li₂CO₃, with a dielectric constant (ε_r) of 143.06, a dielectric loss (tan δ) value of 4.31×10^-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.327-340
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• 1996

In this study, a series of $LiNbO_{3}$ crystals with different [Li]/[Nb] ratios, congruent $LiNbO_{3}$ crystals with doped Mg and with Mg and codoped with Mn were grown by the Czocharalski method. These were investigated by UV and IR spectrophotometry. Stoichiometry dependences of the UV absorption edge and the $OH^{-}$ absorption spectra were studied with different [Li]/[Nb] ratios. The position of the UV absorption edge adn the shape and peak point of the $OH^{-}$ absorption spectra changed monotonously upto a critical concentration of Mg ions. The mechanism of the incorporation of Mg ions changes at this concentration. The decomposition of the $OH^{-}$ absorption spectra using a Gaussian lineshape function showed that in Li-deficient crystals the absorption spectra consist of five components in contrast to more or less perfect stoichiometric crystals which reveal to three components. On the basis of these results, the intrinsic and the extrinsic defect structure models in $LiNbO_{3}$ crystals were examined. The behaviour of $\nu$ (OH) reflects the defect structure and supports the Li-site vacancy model as the intrinsic defect structure model and the corresponding extrinsic defect model. A brief discussion is also given of the behaviour of $\nu$ (OH) in $LiNbO_{3}$ crystals simultaneously doped with several kinds of impurity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.50-55
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• 2002

$Nd_2O_3$0.2~0.5 wt.% doped $LiNbO_3$single crystals were grown by the Czochralski method. The ZnO doping by 2~8 mole% can improve the resistance of optical damage. In this study, Nd : LiNbO$_3$ single crystals with the periodical domain structure were obtained by CZ method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.25-28
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• 1999

Metal ferroelectric semiconductor Field Effect- Transistors(MFSFET) with various gate electrodes, that are aluminum, platinum and poly -Si, using LiNbO$_3$/Si(100) structures were fabricated and the properties of the FETs have been discussed. The drain current of the state of FET with Pt electrode was more than 3 orders of magnitude larger than the state current at the same gate voltage of 1.5 V, 7.rich means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about 10$^3$s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.