• Journal of Korea Game Society
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• v.7 no.4
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• pp.13-21
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• 2007

Recently, medical advances have been increasing the size of the aged population. With rapidly developing technology, computers are now essential parts in our daily life, and the number of the aged people using computers is also increasing continuously. But user interfaces and contents for the aged people have not yet been developed actively. In this paper, we present a 3D sensory gate-ball game which can be played by the aged people easily. This study is based on 3D graphics and uses a realistic gate-ball stick and balls as interfaces, so it can improve both physical and metal health of the aged people. Because our game is a sensory game, it is easy to play in house without an outdoor playground. In addition, the game provides many interesting situation so that it can raise the participation and interest of the aged people.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.